List of Contributors

Autor: Rafik Addou, Arto Aho, Aaron M. Andrews, Richardella Anthony, Donat J. As, Vitaliy Avrutin, Gavin R. Bell, Sergio Bietti, Victor Blinov, Andrea Castellano, Laurent Cerutti, Kevin Clark, Charles Cornet, Mickaël Da Silva, Phillip Dang, Hermann Detz, Molly Doran, Olivier Durand, Stephen Farrell, I.A. Fischer, Everett Fraser, Alex Freundlich, Alexandre Garreau, Mircea Guina, Teemu Hakkarainen, Drew Hanser, Isaac Hernández-Calderón, Christopher L. Hinkle, Yoshiji Horikosh, Alex Ignatiev, Sergey V. Ivanov, Roland Jäger, Valentin N. Jmerik, Shane R. Johnson, Yung-Chung Kao, Nobuyuki Koguchi, Xufeng Kou, Jenn-Ming Kuo, Naohiro Kuze, François Lelarge, Christophe Levallois, Juan Li, Wei Li, Klaus Lischka, Joao Marcelo Jordao Lopes, Donald MacFarland, Karine Madiomanana, Matthew Marek, Zetian Mi, Hadis Morkoç, Maksym Myronov, Grégoire Narcy, Dmitrii V. Nechaev, Tianxiao Nie, Alexander Nikiforov, Jiro Nishinaga, Samarth Nitin, Gang Niu, Kunishige Oe, M. Oehme, Mark O’Steen, Ümit Özgür, Oleg Pchelyakov, Paul Pinsukanjana, Dmitry Pridachin, Eric Readinger, Jean-Baptiste Rodriguez, Guillaume Saint-Girons, Stefano Sanguinetti, Stephen T. Schaefer, Achim Schöll, Andreas Schramm, Frank Schreiber, Werner Schrenk, J. Schulze, Irina V. Sedova, Arvind J. Shalindar, Aidong Shen, Ichiro Shibasaki, Leonid Sokolov, Sergey V. Sorokin, Gunther Springholz, Gottfried Strasser, Jianshi Tang, Eric Tournié, Kevin Vargason, Dominique Vignaud, Jukka Viheriälä, Bertrand Vilquin, Suresh Vishwanath, Robert M. Wallace, Lee A. Walsh, Kang L. Wang, Shu M. Wang, Preston T. Webster, Huili G. Xing, Faxian Xiu, Masahiro Yoshimoto, Tobias Zederbauer, Songrui Zhao

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::906b622bf9aa2dc954e18d9ee0b85c6b
https://doi.org/10.1016/b978-0-12-812136-8.00049-9

Microstructure and surface morphology of InAsSbBi grown by molecular beam epitaxy

Autor: Shane Johnson, Arvind J. Shalindar, Stephen T. Schaefer, R. R. Kosireddy

Publikováno v: Journal of Applied Physics. 126:095108

The physical and chemical properties of 210 nm thick InAsSbBi layers grown by molecular beam epitaxy at temperatures between 400 and 430 °C on (100) GaSb substrates are investigated using Rutherford backscattering, X-ray diffraction, transmission el

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::f34649f17fb1c5f7f7c478c3fce24e08
https://doi.org/10.1063/1.5096795

Measurement of InAsBi mole fraction and InBi lattice constant using Rutherford backscattering spectrometry and X-ray diffraction

Autor: Preston T. Webster, Barry Wilkens, Terry Alford, Shane Johnson, Arvind J. Shalindar

Publikováno v: Journal of Applied Physics. 120:145704

Several 1 μm thick, nearly lattice-matched InAsBi layers grown on GaSb are examined using Rutherford backscattering spectrometry and X-ray diffraction. Random Rutherford backscattering measurements indicate that the average Bi mole fraction ranges f

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::871e32fb838be67e1e510e0212791fef
https://doi.org/10.1063/1.4964799