Zobrazeno 1 - 10
of 38
pro vyhledávání: '"Arve Holt"'
Publikováno v:
International Journal of Chemical Reactor Engineering. 11:57-68
For an installed silicon-based solar cell panel, about 40% of the energy needed for fabrication is consumed for production of the silicon feedstock. Reducing the energy consumption in this step is therefore crucial in order to minimize the energy pay
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::78d056784f93a10f7b5f6ab62c4bd3d6
https://doi.org/10.1515/ijcre-2012-0027
https://doi.org/10.1515/ijcre-2012-0027
Publikováno v:
Solar Energy Materials and Solar Cells. 107:188-200
For an installed silicon based solar cell panel, about 40% of the energy costs involved in the production of the panels can be attributed to the production of the silicon feedstock itself (poly production and crystal growth). Hence reducing the energ
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8a4763401110736205eb42f278b28480
https://doi.org/10.1016/j.solmat.2012.08.014
https://doi.org/10.1016/j.solmat.2012.08.014
Publikováno v:
Energy Procedia. 27:70-75
Light induced degradation caused by boron-oxygen related defects in boron doped Czochralski silicon is known to considerably reduce the solar cell conversion efficiency upon initial use. In multicrystalline silicon the minority carrier lifetime is de
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3ccef0bb034656516c3a9e8db25900b5
Publikováno v:
Energy Procedia. 8:23-27
This work presents a theoretical study of iron and chromium impurities located at substitutional site and their complex with a vacancy by the density functional theory. Diffusion barriers separating the recombination centers such as the Fei-V(Cri-V)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7da99016ee74a40a4d863f08f50ce2b8
Autor:
Edouard Monakhov, Jeyanthinath Mayandi, Chi Kwong Tang, Bengt Gunnar Svensson, Arve Holt, Eiliv Lund
Publikováno v:
physica status solidi c. 8:725-728
Electrically active defects introduced in boron-doped silicon by rapid thermal annealing were studied using deep level transient spectroscopy. Thermal treatment at 1000 °C for 2 minutes induced two hole traps with energy levels at 0.3 eV and 0.4 eV
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::edbc4ac518f0a7ff7d7f65eba8900c24
https://doi.org/10.1002/pssc.201000263
https://doi.org/10.1002/pssc.201000263
Autor:
Arve Holt, M. Javidi, Erik Stensrud Marstein, P.A. Ramachandran, Morten C. Melaaen, Werner O. Filtvedt, H. Tathgar
Publikováno v:
Solar Energy Materials and Solar Cells. 94:1980-1995
For an installed silicon based solar cell panel, about 40% of the energy consumed producing the cell was used during production of the silicon feedstock. Reducing the energy consumption in this step is therefore crucial in order to minimize the energ
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::08125888056b082eba721c6a975aa491
https://doi.org/10.1016/j.solmat.2010.07.027
https://doi.org/10.1016/j.solmat.2010.07.027
Publikováno v:
Progress in Photovoltaics: Research and Applications. 17:289-296
An investigation of impurities, crystal defects and microstructure has been performed on the edge zone, i.e. close to the crucible wall, which experiences reduced carrier lifetime in a directionally solidified multicrystalline p-doped silicon ingot.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::165d71c9936c8436ebcc1f412b78bafb
https://doi.org/10.1002/pip.876
https://doi.org/10.1002/pip.876
Publikováno v:
Solar Energy Materials and Solar Cells. 92:1091-1098
The optical properties and etch rates of silicon nitride (SiN x :H) deposited by plasma-enhanced chemical vapour deposition (PECVD) and their correlation with bond concentrations have been studied. By varying the silane-to-total gas ratio, films with
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::49e194b42eca625afa313c2df1000c89
https://doi.org/10.1016/j.solmat.2008.03.013
https://doi.org/10.1016/j.solmat.2008.03.013
Publikováno v:
Solid State Phenomena. :315-320
Hydrogenated n and p doped Czochralski Si substrates have been studied by means of atomic force microscopy, scanning and transmission electron microscopy, Raman spectroscopy and microwave photoconductivity decay techniques. The measurements show that
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b34521d01ee34f2c84d4fbe6da2e8cef
https://doi.org/10.4028/www.scientific.net/ssp.131-133.315
https://doi.org/10.4028/www.scientific.net/ssp.131-133.315
Autor:
Arve Holt, T. H. Breivik, B.R. Olaisen, D.N. Wright, Anette Eleonora Gunnæs, Spyros Diplas, Arne Olsen, A.G. Ulyashin
Publikováno v:
Thin Solid Films. 515:8479-8483
Properties and structure of ZnO and ZnO:Al films deposited on c-Si, a-Si:H/Si and glass substrates are studied by various methods. The transmittance of the ZnO:Al was found to be higher when compared to ZnO, and the refractive index lower. X-ray phot
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5c461421254a2732f7744ccad5ce5179
https://doi.org/10.1016/j.tsf.2007.03.095
https://doi.org/10.1016/j.tsf.2007.03.095