Zobrazeno 1 - 10
of 16
pro vyhledávání: '"Arunanshu M. Roy"'
Publikováno v:
IEEE Transactions on Magnetics. 47:2746-2749
A transfer matrix method for simulating spin injection into semiconductors in the case of high electric fields has been developed. The nonlinear relationship between electron spin density and electrochemical potential splitting, the effect of electri
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6ccdad15ceacdb14c7bbc56015c659a1
https://doi.org/10.1109/tmag.2011.2151843
https://doi.org/10.1109/tmag.2011.2151843
Publikováno v:
IEEE Electron Device Letters. 33:1541-1543
We report a metal-insulator-semiconductor (MIS) contact using a TiO2 interfacial layer on highly doped n+ Ge to overcome the problem of metal-Fermi-level pinning on Ge, which results in a large electron barrier height. A specific contact resistivity
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3af0d7dc0fd673a92e95d0b00f1c9d90
https://doi.org/10.1109/led.2012.2214758
https://doi.org/10.1109/led.2012.2214758
Publikováno v:
IEEE Electron Device Letters. 33:761-763
Recent experiments have demonstrated a reduction of Fermi-level pinning in contacts to n-type Ge by the insertion of a thin tunnel barrier at the interface. The presence of fixed charge in these interface layers can contribute to Schottky-barrier red
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::53cfd585f16b1d6125ae86fb82400e93
https://doi.org/10.1109/led.2012.2191386
https://doi.org/10.1109/led.2012.2191386
Publikováno v:
Journal of Learning Disabilities. 5:259-265
This is a case report and discussion of a man who presented with both learning disabilities and Munchausen's syndrome, a combination that is rarely described in the professional literature. Most individuals with Munchausen's syndrome disengage from p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::18798a5ee5176a372b53883800e3fd98
https://doi.org/10.1177/146900470100500305
https://doi.org/10.1177/146900470100500305
Publikováno v:
IEEE Electron Device Letters. 31:1077-1079
Recent experiments have demonstrated the possibility of reducing the effect of Fermi level pinning by using a thin dielectric tunneling barrier. For contacts to n-Ge where the Fermi level of metals pins near the valence band, alleviation of Fermi pin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7c4f65ff0aa5ffa3bb5bba14827c0425
https://doi.org/10.1109/led.2010.2058838
https://doi.org/10.1109/led.2010.2058838
Publikováno v:
2012 International Silicon-Germanium Technology and Device Meeting (ISTDM).
We achieve a 70x reduction in specific contact resistivity to 1.28E-6Ωcm² using metal-insulator-semiconductor (MIS) contacts with TiO2. The effectiveness of this method is understood in terms of the electron barrier height, band offsets, and the me
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::476cfc2eaf8a4d1dc8c900f202f3bcfe
https://doi.org/10.1109/istdm.2012.6222473
https://doi.org/10.1109/istdm.2012.6222473
Autor:
J.-Y. Jason Lin, Shurong Liang, Suyog Gupta, Arunanshu M. Roy, W. P. Maszara, Yoshio Nishi, Krishna C. Saraswat, Bin Yang
Publikováno v:
2012 International Silicon-Germanium Technology and Device Meeting (ISTDM).
We report a low specific contact resistivity of 5.5 x 10-7 Ωcm2 in nickel germanide (NiGe) contacts on n+ Ge. Data fitting with the contact resistivity model by A.M. Roy et al. (2010) suggests SBH of ~0.44eV for NiGe and ~0.55eV for Al/Ti contacts.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6f1741c76978b723b94cb486349c360a
https://doi.org/10.1109/istdm.2012.6222472
https://doi.org/10.1109/istdm.2012.6222472
Autor:
Mark L. Brongersma, Donguk Nam, Krishna C. Balram, Devanand S. Sukhdeo, Kevin C. Y. Huang, Yoshio Nishi, Szu-Lin Cheng, Krishna C. Saraswat, Ze Yuan, Arunanshu M. Roy, David A. B. Miller
Publikováno v:
Optics express. 19(27)
This work presents a novel method to introduce a sustainable biaxial tensile strain larger than 1% in a thin Ge membrane using a stressor layer integrated on a Si substrate. Raman spectroscopy confirms 1.13% strain and photoluminescence shows a direc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b19e36a37545a75a3b564acd412bd3aa
https://pubmed.ncbi.nlm.nih.gov/22274174
https://pubmed.ncbi.nlm.nih.gov/22274174
Electroluminescence from Strained Ge membranes and Implications for an Efficient Si-Compatible Laser
Autor:
Krishna C. Saraswat, Arunanshu M. Roy, Donguk Nam, Kevin C. Y. Huang, Yoshio Nishi, David S. Sukhdeo, Mark L. Brongersma, Szu-Lin Cheng
We demonstrate room-temperature electroluminescence (EL) from light-emitting diodes (LED) on highly strained germanium (Ge) membranes. An external stressor technique was employed to introduce a 0.76% bi-axial tensile strain in the active region of a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f775d10e2cd0c213fe425b7e0de8d998
Publikováno v:
SPIE Proceedings.
The development of spin MOSFETs has been stymied by low values of magnetoresistance (MR) measured in experiments. Simulation studies have largely focused on diffusion driven or ballistic transport in the semiconductor and a simplistic treatment of sp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0fe0202170a0695b6ab18e92decab555
https://doi.org/10.1117/12.893171
https://doi.org/10.1117/12.893171