Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Arun Kumar Dhasiyan"'
Autor:
Arun Kumar Dhasiyan, Frank Wilson Amalraj, Swathy Jayaprasad, Naohiro Shimizu, Osamu Oda, Kenji Ishikawa, Masaru Hori
Publikováno v:
Scientific Reports, Vol 14, Iss 1, Pp 1-18 (2024)
Abstract Using our recently developed radical-enhanced metalorganic chemical vapor deposition (REMOCVD) technique, we have grown gallium nitride (GaN) on bulk GaN and GaN on Si templates. Three features make up this system: (1) applying very high-fre
Externí odkaz:
https://doaj.org/article/92d0d66c5aa24cb99c6eaaf75013cf14
Autor:
Frank Wilson Amalraj, Arun Kumar Dhasiyan, Yi Lu, Naohiro Shimizu, Osamu Oda, Kenji Ishikawa, Hiroki Kondo, Makoto Sekine, Nobuyuki Ikarashi, Masaru Hori
Publikováno v:
AIP Advances, Vol 8, Iss 11, Pp 115116-115116-5 (2018)
We developed a new method of GaN growth using Radical-Enhanced Metalorganic Chemical Vapor Deposition (REMOCVD) technology by which Gallium Nitride (GaN) grows at low temperatures without ammonia gas. In this method, we investigated the effect of N2/
Externí odkaz:
https://doaj.org/article/1e3967d4ff33405c8195d3ed00bc670b
Autor:
Osamu Oda, Masaru Hori, Nobuyuki Ikarashi, Arun Kumar Dhasiyan, Hiroki Kondo, Yi Lu, Frank Wilson Amalraj, Kenji Ishikawa, Naohiro Shimizu, Makoto Sekine
Publikováno v:
AIP Advances, Vol 8, Iss 11, Pp 115116-115116-5 (2018)
We developed a new method of GaN growth using Radical-Enhanced Metalorganic Chemical Vapor Deposition (REMOCVD) technology by which Gallium Nitride (GaN) grows at low temperatures without ammonia gas. In this method, we investigated the effect of N2/
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1709e93afdbc7bbd627e9df8e683f438
https://doi.org/10.1063/1.5050819
https://doi.org/10.1063/1.5050819