Zobrazeno 1 - 10
of 19
pro vyhledávání: '"Arun Banotra"'
Publikováno v:
Journal of Materials Research and Technology, Vol 21, Iss , Pp 916-928 (2022)
Thin films of Indium sulphide are deposited on corning glass substrate by thermal evaporation at room temperature (300 K). The as-deposited films were annealed from 373 to 723 K under vacuum ∼1 × 10−3 mbar. An amorphous phase is obtained from 30
Externí odkaz:
https://doaj.org/article/0f6f0a53a98a48448f6baca5f4cc1993
Publikováno v:
Journal of Materials Research and Technology, Vol 20, Iss , Pp 3760-3771 (2022)
CuxS(x;1,2) layers were grown on thermal annealing of the sequentially evaporated layer deposition (SELD) stack of Cu/S from 373 to 573 K. The thicknesses of the deposited stacks were fixed at 200 and 600 nm. The 300 K deposited layers possess a CuS
Externí odkaz:
https://doaj.org/article/cd41db9b191741ae9e8cb56abb336a44
Autor:
Naresh Padha, Arun Banotra
Publikováno v:
Journal of Materials Research. 36:3506-3518
Ternary SnS1−xSex alloy thin films prepared by depositing stacks of varied elemental weight percentages using multisource sequential elemental layer deposition (MSELD) technique. The focus of investigation is to achieve SnS1−xSex phase by varying
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::405253bbb442b6ba1472d317893eb4f8
https://doi.org/10.1557/s43578-021-00394-0
https://doi.org/10.1557/s43578-021-00394-0
Autor:
Arun Banotra, Vishal Singh, Saleem Khan, Usha Parihar, Ajay Singh, Seema Gautam, Sanjeev K. Sharma, Hidemitsu Furukawa, Ajit Khosla
Publikováno v:
ECS Journal of Solid State Science and Technology. 12:067001
Facile synthesis demonstrated formation of CuO/rGO composite for enhanced optical and electrical characteristics for sensing and photonic devices. CuO nanoparticles synthesized using sol-gel method and various rGO percentages (10%–30%) were loaded
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::92905be3239af45998a7eefe5d0d91fe
https://doi.org/10.1149/2162-8777/acd6b9
https://doi.org/10.1149/2162-8777/acd6b9
Publikováno v:
Diamond and Related Materials. 133:109704
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9589c0fa9bc619b84fc6c844c4d2149b
https://doi.org/10.1016/j.diamond.2023.109704
https://doi.org/10.1016/j.diamond.2023.109704
Autor:
Naresh Padha, Arun Banotra
Publikováno v:
Optical and Quantum Electronics. 54
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f772f9c2838aa6f891485305ec56ef34
https://doi.org/10.1007/s11082-022-03739-z
https://doi.org/10.1007/s11082-022-03739-z
Autor:
Arun Banotra, Naresh Padha
Publikováno v:
Solar Energy. 211:810-821
SnxSy varied stoichiometric stack thin films (S1, S2, S3) were obtained using multisource sequential elemental layer deposition (MSELD) technique on annealing. The composition of the SnxSy thin films were varied by supplementing sulphur on predeposit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::724f75dcc6fd793ab7bfb841e4d7dc2d
https://doi.org/10.1016/j.solener.2020.10.005
https://doi.org/10.1016/j.solener.2020.10.005
Publikováno v:
Journal of Materials Science: Materials in Electronics. 31:3172-3183
CuInSe2 (CIS) films were obtained on annealing of 280 nm and 775 nm thick Cu/In/Se stacks deposited on corning glass substrate. The stacked elemental layer deposition (SELD) technique was used for the deposition of the films of Se, In and Cu layers.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3489449097837376bc8e23449e7cf18b
https://doi.org/10.1007/s10854-020-02865-2
https://doi.org/10.1007/s10854-020-02865-2
Autor:
Arun Banotra, Naresh Padha
Publikováno v:
Materials Today: Proceedings. 26:3420-3425
SnS (S1) and SnS0.4Se0.6 (S2) thin films were prepared using thermal evaporation on annealing at 523 K of the thermally deposited films. Compositional analysis of the films reveals the formation of SnS and SnS0.40Se0.60 phase. X-ray diffraction resul
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c3f5844d056dc9217bc8e5aa15701a84
https://doi.org/10.1016/j.matpr.2019.11.154
https://doi.org/10.1016/j.matpr.2019.11.154
Publikováno v:
Journal of Electronic Materials. 48:4335-4341
As prepared by fusion, SnTexSe1−x (x = 0.68) alloy is found to possess mixed phases of hexagonal Te and orthorhombic SnSe. The deposited films of this alloy demonstrate incongruent evaporation of the constituents. Reductions in c-parameter and stra
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::841bf7c1b7d2095a38480d9f98c43c1e
https://doi.org/10.1007/s11664-019-07202-w
https://doi.org/10.1007/s11664-019-07202-w