Zobrazeno 1 - 10
of 16
pro vyhledávání: '"Arturo Sibaja-Hernandez"'
Autor:
Barry O’Sullivan, Aarti Rathi, Alireza Alian, Sachin Yadav, Hao Yu, Arturo Sibaja-Hernandez, Uthayasankaran Peralagu, Bertrand Parvais, Adrian Chasin, Nadine Collaert
Publikováno v:
Micromachines, Vol 15, Iss 8, p 951 (2024)
For operation as power amplifiers in RF applications, high electron mobility transistor (HEMT) structures are subjected to a range of bias conditions, applied at both the gate and drain terminals, as the device is biased from the OFF- to ON-state con
Externí odkaz:
https://doaj.org/article/95d5c2543378425ebf982122f14117f1
Autor:
Rana ElKashlan, Ahmad Khaled, Raul Rodriguez, Arturo Sibaja-Hernandez, Uthayasankaran Peralagu, AliReza Alian, Nadine Collaert, Piet Wambacq, Bertrand Parvais
Publikováno v:
International Journal of Microwave and Wireless Technologies. :1-10
Short-channel Gallium Nitride (GaN) high-electron-mobility transistors (HEMTs) often utilize T-shape gates due to their large gate-line cross-sectional area and subsequent fMAX increase. In this paper, we report the linearity trade-offs associated wi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1818d30abc50bfe30e677ad6efee0b49
https://doi.org/10.1017/s1759078722001428
https://doi.org/10.1017/s1759078722001428
Autor:
Alireza Alian, Raul Rodriguez, Sachin Yadav, Uthayasankaran Peralagu, Arturo Sibaja Hernandez, Vamsi Putcha, Ming Zhao, Rana ElKashlan, Bjorn Vermeersch, Hao Yu, Erik Bury, Ahmad Khaled, Nadine Collaert, Bertr Parvais
Publikováno v:
ESSDERC 2022 - IEEE 52nd European Solid-State Device Research Conference (ESSDERC).
This work investigates scaling of the GaN channel thickness on top of a carbon-doped GaN buffer (cGaN) grown on 200mm Si substrates. Device performance tradeoffs are analyzed in terms of DC, RF, reliability and thermal behavior. A thinner channel imp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4d9b4605337d5dc3378a090e6aa44fc1
https://doi.org/10.1109/essderc55479.2022.9947147
https://doi.org/10.1109/essderc55479.2022.9947147
Autor:
Wei-Min Wu, Ming-Dou Ker, Shih-Hung Chen, Arturo Sibaja-Hernandez, Sachin Yadav, Uthayasankaran Peralagu, Hao Yu, AliReza Alian, Vamsi Putcha, Bertrand Parvais, Nadine Collaert, Guido Groeseneken
Publikováno v:
2021 IEEE International Electron Devices Meeting (IEDM).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e11720428603077563d725f5cb9f9275
https://doi.org/10.1109/iedm19574.2021.9720581
https://doi.org/10.1109/iedm19574.2021.9720581
Autor:
Vikas Chauhan, Aritra Banerjee, Sachin Yadav, R. Rodriguez, Mark Ingels, Liesbeth Witters, Bernardette Kunert, Niamh Waldron, K. Vondkar Kodandarama, A. Walke, Uthayasankaran Peralagu, R. Y. ElKashlan, Vamsi Putcha, B. Hsu, Hao Yu, Nadine Collaert, Bertrand Parvais, Ming Zhao, A. Khaled, Arturo Sibaja-Hernandez, A. Vais, Eddy Simoen, A. Alian, Piet Wambacq, Yves Mols
In this work, we will address the opportunities of a hybrid III-V/CMOS technology for next generation wireless communication, beyond 5G, moving to operating frequencies above 100GHz. Challenges related to III-V upscaling and CMOS co-integration using
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::89e0e80043d90d79ee726a459f9dcfc5
https://hdl.handle.net/20.500.14017/0a3309e0-2cfe-494e-9cbe-87897aaacc0e
https://hdl.handle.net/20.500.14017/0a3309e0-2cfe-494e-9cbe-87897aaacc0e
Autor:
Marc Heyns, Aaron Thean, Dan Mocuta, Laura Nyns, V. Putcha, Xiang Jiang, Jacopo Franco, Nadine Collaert, Arturo Sibaja Hernandez, Valentina Spampinato, Alexis Franquet, Dimitri Linten, Jerome Mitard, Sonja Sioncke, Fu Tang, Jan Willem Maes, Michael Eugene Givens, Qi Xie, Rita Rooyackers, A. Vais, Sergio Calderon Ardila
Publikováno v:
Advances in Science, Technology and Engineering Systems, Vol 3, Iss 5, Pp 36-44 (2018)
In this work, we discuss how the insertion of a LaSiOx layer in between an in-house IL passivation layer and the high-k has moved the III-V gate stack into the target window for future technology nodes. The insertion of this LaSiOx layer in the gate
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2f90282291f65b09e4873a69c32b11c9
https://astesj.com/v03/i05/p06/
https://astesj.com/v03/i05/p06/
Autor:
E. Vecchio, Roger Loo, Geert Eneman, W. Li, Nadine Collaert, C. Lorant, Geert Hellings, Davit Melkonyan, Trong Huynh-Bao, Philippe Matagne, Erik Rosseel, Arturo Sibaja-Hernandez, Farid Sebaai, Anabela Veloso, Claudia Fleischmann, Dennis H. van Dorp, Niamh Waldron, Katia Devriendt, Zheng Tao, Dan Mocuta, Bernardette Kunert, Efrain Altamirano-Sanchez, Lieve Teugels, Stephan Brus, Philippe Marien, Alexey Milenin, Vasile Paraschiv, Eddy Simoen, Boon Teik Chan
Publikováno v:
ECS Transactions. 80:3-20
Over the past decades, aggressive and continuous transistor scaling according to Moore’s law has enabled new system features thanks to ever increasing device performance and density, reduced cost and power consumption. To keep the industry’s grow
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5e7f3a6b4d2f490c789fb8b77f74a4c5
https://doi.org/10.1149/08002.0003ecst
https://doi.org/10.1149/08002.0003ecst
Autor:
Bertrand Parvais, Komal Vondkar Kodandarama, A. Walke, Bernardette Kunert, Aritra Banerjee, Eddy Simoen, Ming Zhao, R. Y. ElKashlan, Nadine Collaert, Niamh Waldron, Uthayasankaran Peralagu, Liesbeth Witters, Yves Mols, R. Rodriguez, Hao Yu, A. Alian, Piet Wambacq, A. Vais, Mark Ingels, Vamsi Putcha, Brent Hsu, Arturo Sibaja-Hernandez, A. Khaled, Vikas Chauhan, Sachin Yadav
Publikováno v:
ECS Meeting Abstracts. :1707-1707
Compound semiconductor devices have always intrigued the semiconductor industry due to their high intrinsic mobilities and the heterostructure engineering enabled by those materials. While CMOS has been the vehicle pushing the industry to ever smalle
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e2505c18dcdc7aa9f50cca63261fc5ee
https://doi.org/10.1149/ma2020-02241707mtgabs
https://doi.org/10.1149/ma2020-02241707mtgabs
Autor:
Bernardette Kunert, Liesbet Witters, Reynald Alcotte, Sachin Yadav, Hao Yu, V. Putcha, Brice De Jaeger, A. Vais, Robert Langer, R. Rodriguez, Amey Mahadev Walke, Ellen Zhao, A. Khaled, R. Y. ElKashlan, Nadine Collaert, Marina Baryshnikova, Arturo Sibaja-Hernandez, Ming Zhao, Uthayasankaran Peralagu, Mark Ingels, Geert Mannaert, Piet Wambacq, Niamh Waldron, Yves Mols, Bertrand Parvais, Daniel M. Fleetwood, Alireza Alian, Eddy Simoen
Publikováno v:
ECS Meeting Abstracts. :1392-1392
The growing interest for 5G radios pushes technology development towards low-cost and high-performance solutions for operating at microwave and mm-wave. Downscaling CMOS technology has allowed the integration of high-speed transceivers on silicon chi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0c0cc8b3761e6f770d69d18e1b244874
https://doi.org/10.1149/ma2020-01241392mtgabs
https://doi.org/10.1149/ma2020-01241392mtgabs
Autor:
V. Putcha, B. van Liempd, A. Alian, Piet Wambacq, Anne Vandooren, Hao Yu, Dimitri Linten, Mark Ingels, Nadine Collaert, A. Walke, A. Vais, Bertrand Parvais, Niamh Waldron, V. Deshpande, Arturo Sibaja-Hernandez, Shih-Hung Chen, Liesbeth Witters
Publikováno v:
2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT).
In this work, we will address the opportunities and technology challenges related to next generation mobile communication. To enable the required data rates and reliability for 5G applications, Si CMOS will need to be complemented with new materials
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3125c222ff7736cec026dc6e1c38a0b4
https://doi.org/10.1109/icsict.2018.8565822
https://doi.org/10.1109/icsict.2018.8565822