Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Arturo M. Martinez"'
Autor:
KATHARINA FENZ, THOMAS MITTERLING, ARTURO M. MARTINEZ, JOSEPH ALBERT NINO M. BULAN, RON LESTER S. DURANTE, MARYMELL A. MARTILLAN, MILDRED B. ADDAWE, ISABELL ROITNER-FRANSECKY
Publikováno v:
Asian Development Review, Vol 41, Iss 01, Pp 263-300 (2024)
Detailed data on the distribution of human populations are valuable inputs to research and decision making. This study aims at compiling data on population density that are more granular than government-published estimates and assessing different met
Externí odkaz:
https://doaj.org/article/907b4548180b4f1da6a9ba3bb2dd748d
Autor:
L. R. C. Fonseca, Christopher C. Hobbs, Alexander A. Demkov, D. Triyoso, Bruce E. White, E. Luckowski, J. Schaeffer, R. Garcia, L.B. La, Rama I. Hegde, V. Dhandapani, D. Roan, Srikanth B. Samavedam, W.J. Taylor, Mark V. Raymond, David Gilmer, Arturo M. Martinez, C. Capasso, O. Adetutu, K. Moore, J. M. Grant, Philip J. Tobin, S.G.H. Anderson, H.-H. Tseng
Publikováno v:
IEEE International Electron Devices Meeting 2003.
We have examined the impact of small and systematic changes at the metal/dielectric interface on metal work-function and report on Fermi level pinning of TaN, TaSiN and TiN gates on SiO/sub 2/, Al/sub 2/O/sub 3/ and HfO/sub 2/ for the first time. The
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6ba6826ba65207209b3beea630b55b77
https://doi.org/10.1109/iedm.2003.1269286
https://doi.org/10.1109/iedm.2003.1269286
Autor:
Dave Sing, James Nelson Smith, Jen-Yee Nguyen, Jack Jiang, C. Capasso, M.J. Rendon, William J. Taylor, Phil Tobin, E. Luckowski, J. Schaeffer, Eric Verret, Arturo M. Martinez
Publikováno v:
MRS Proceedings. 810
Against a backdrop of the latest ITRS predictions for CMOS junctions, we compare methods for dopant introduction and activation, methods for making contact to these regions, and methods for measurement of material and device properties. As activation
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::72324256c50429044cf4f31991595fd1
https://doi.org/10.1557/proc-810-c1.1
https://doi.org/10.1557/proc-810-c1.1
Autor:
Sergei V. Postnikov, E. Luckowski, Wei Wu, Arturo M. Martinez, Tab A. Stephens, Scott Daniel Hector, Richard D. Peters, Colita Parker, S. Dakshina-Murthy, Jonathan L. Cobb
Publikováno v:
Advances in Resist Technology and Processing XX.
We have demonstrated the fabrication of working 130 nm-node SRAMs with high yield using single layer ultra-thin resist (UTR) integrations. Transistor gates were fabricated using 140-nm-thick resist films in combination with a single layer, inorganic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1a9fb88678bd8a8e014f77983bafdd4c
https://doi.org/10.1117/12.485122
https://doi.org/10.1117/12.485122
Autor:
Arturo M. Martinez, Richard D. Peters, S. Dakshina-Murthy, E. Luckowski, Wei Wu, Colita Parker, Scott Daniel Hector, Jonathan L. Cobb
Publikováno v:
SPIE Proceedings.
Low-k1 imaging, high-NA optics, pattern collapse, and the absorption of resist materials in 157-nm and EUV lithographies are driving down the thickness of the photoresist layer in integrated circuit fabrication processes. Although devices and test st
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::67d918a8405a5866497ba4f7a6777fab
https://doi.org/10.1117/12.474226
https://doi.org/10.1117/12.474226
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