Zobrazeno 1 - 2
of 2
pro vyhledávání: '"Arturo Escobosa Echavarría"'
Autor:
Leonardo G. Vega Macotela, Georgiy Polupan, Tetyana Torchynska, Arturo Escobosa Echavarría, Ricardo Cisneros Tamayo
Publikováno v:
Journal of Materials Science: Materials in Electronics. 31:2643-2649
GaAs/Al0.30Ga0.70As/AlGaInAs/ heterostructures grown by molecular beam epitaxy with embedded InAs quantum dots (QDs) have been investigated before and after thermal annealing at 640 °C for 2 h. Two types of QD structures with the different compositi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::70d6a1e2fdca24de1fc530026582beca
https://doi.org/10.1007/s10854-019-02803-x
https://doi.org/10.1007/s10854-019-02803-x
Publikováno v:
Materials Chemistry and Physics. 198:341-345
Physical vapor transport growth of Bi2Te3 thin films from elemental Bi and Te sources in high vacuum is presented. Three different kinds of substrates were used: Si (1 0 0), Si (1 1 1) and sapphire (0 0 1). Structural and morphological properties of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ca9a80e2eae39e90ded08f5c35c93b82
https://doi.org/10.1016/j.matchemphys.2017.06.008
https://doi.org/10.1016/j.matchemphys.2017.06.008