Zobrazeno 1 - 10
of 39
pro vyhledávání: '"Arturo, Escobosa"'
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 11, Pp 631-633 (2023)
This Special Issue is devoted to research and development in the field of electron devices science and technology. We have selected a number of high-quality papers presented at the 4th Latin American Electron Device Conference (LAEDC 2022). The forth
Externí odkaz:
https://doaj.org/article/24e49012809a4cf8807115b55b430ba2
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 10, Pp 413-415 (2022)
This Special Issue is devoted to research and development in the field of electron devices science and technology. We have selected a number of high-quality papers presented at the 3rd Latin American Electron Device Conference (LAEDC 2021). The third
Externí odkaz:
https://doaj.org/article/da9f1ec9eb98429ea542d8517456d1ee
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 9, Pp 447-449 (2021)
This Special Issue is devoted to research and development in the field of electron devices science and technology. We have selected a number of high quality papers presented at the $2^{nd}$ Latin American Electron Device Conference (LAEDC 2020). The
Externí odkaz:
https://doaj.org/article/6d98572931e1430e826914dabb034df7
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 8, Pp 373-375 (2020)
This Special Issue is dedicated to recent research in the field of compact modelling for circuit design. The topics included all device structures, provided it was demonstrated thet the presented compact modelling solutions were implementable in circ
Externí odkaz:
https://doaj.org/article/fbb34ddfe9854598afa16aa3190140ae
Autor:
Torchynska, Tetyana, Cisneros-Tamayo, Ricardo, Polupan, Georgiy, Stintz, Andreas, Echavarria, Arturo Escobosa
Publikováno v:
ECS Journal of Solid State Science & Technology; Sep2022, Vol. 11 Issue 9, p114-120, 7p
Autor:
Leonardo G. Vega Macotela, Georgiy Polupan, Tetyana Torchynska, Arturo Escobosa Echavarría, Ricardo Cisneros Tamayo
Publikováno v:
Journal of Materials Science: Materials in Electronics. 31:2643-2649
GaAs/Al0.30Ga0.70As/AlGaInAs/ heterostructures grown by molecular beam epitaxy with embedded InAs quantum dots (QDs) have been investigated before and after thermal annealing at 640 °C for 2 h. Two types of QD structures with the different compositi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::70d6a1e2fdca24de1fc530026582beca
https://doi.org/10.1007/s10854-019-02803-x
https://doi.org/10.1007/s10854-019-02803-x
Autor:
Tetyana Torchynska, Ricardo Cisneros-Tamayo, Georgiy Polupan, Andreas Stintz, Arturo Escobosa Echavarria
Publikováno v:
ECS Journal of Solid State Science and Technology. 11:094002
The parameters of quantum dots (QDs) of InAs inserted in Al0.30Ga0.70As/GaAs hetero structures with additional cap/buffer AlGaInAs quantum wells (QWs) of different compositions have been investigated by photoluminescence, transmission electron micros
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4e724fe31d878eb31b886f777e6dec1c
https://doi.org/10.1149/2162-8777/ac8bf5
https://doi.org/10.1149/2162-8777/ac8bf5
Publikováno v:
Applied Surface Science. 428:1098-1105
Germanium crystals were implanted with low-energy and high-dose silicon ions. The implantation led to amorphization of a near-surface layer due to the formation of many adatoms and vacancies. Adatoms can be absorbed in germanium by the amorphous matr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::39b4cf3dbb4b48fb680f092570a8c42f
https://doi.org/10.1016/j.apsusc.2017.09.234
https://doi.org/10.1016/j.apsusc.2017.09.234
Publikováno v:
Materials Chemistry and Physics. 198:341-345
Physical vapor transport growth of Bi2Te3 thin films from elemental Bi and Te sources in high vacuum is presented. Three different kinds of substrates were used: Si (1 0 0), Si (1 1 1) and sapphire (0 0 1). Structural and morphological properties of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ca9a80e2eae39e90ded08f5c35c93b82
https://doi.org/10.1016/j.matchemphys.2017.06.008
https://doi.org/10.1016/j.matchemphys.2017.06.008
Autor:
Omar, Concepción, Miguel, Galván-Arellano, Vicente, Torres-Costa, Aurelio, Climent-Font, Daniel, Bahena, Miguel, Manso Silván, Arturo, Escobosa, Osvaldo, de Melo
Publikováno v:
Inorganic chemistry. 57(16)
Bi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::1826656a71df51bf2594a7c389bb871d
https://pubmed.ncbi.nlm.nih.gov/30066565
https://pubmed.ncbi.nlm.nih.gov/30066565