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pro vyhledávání: '"Artur R. Tuktamyshev"'
Autor:
Vyacheslav A. Timofeev, Alexandr I. Nikiforov, Artur R. Tuktamyshev, Aleksey A. Bloshkin, Vladimir I. Mashanov, Sergey A. Teys, Ivan D. Loshkarev, Natalia A. Baidakova
Publikováno v:
Modern Electronic Materials, Vol 3, Iss 2, Pp 86-90 (2017)
This work deals with elastically strained GeSiSn films and GeSiSn islands. The kinetic diagram of GeSiSn growth for different lattice mismatches between GeSiSn and Si has been drawn. The multilayered periodic structures with pseudomorphic GeSiSn laye
Externí odkaz:
https://doaj.org/article/fb183be9c0f041b18514110729a4f7a5
