Zobrazeno 1 - 10
of 82
pro vyhledávání: '"Arto Aho"'
Autor:
Ville Polojärvi, Akihiro Murayama, Weimin Chen, Arto Aho, Shino Sato, Yuqing Huang, Pontus Höjer, Mircea Guina, Teemu Hakkarainen, Irina Buyanova, Riku Isoaho, Satoshi Hiura, Junichi Takayama
Publikováno v:
Nature Photonics
An exclusive advantage of semiconductor spintronics is its potential for opto-spintronics, which will allow integration of spin-based information processing/storage with photon-based information transfer/communications. Unfortunately, progress has so
Autor:
Jarno Reuna, Arttu Hietalahti, Arto Aho, Riku Isoaho, Timo Aho, Marianna Vuorinen, Antti Tukiainen, Elina Anttola, Mircea Guina
Publikováno v:
ACS Applied Energy Materials
The optical performance of a multilayer antireflective coating incorporating lithography-free nanostructured alumina is assessed. To this end, the performance of single-junction GaInP solar cells and four-junction GaInP/GaAs/GaInNAsSb/GaInNAsSb multi
Autor:
Riku Isoaho, Antti Tukiainen, Juuso Puutio, Arttu Hietalahti, Jarno Reuna, Antti Fihlman, Elina Anttola, Miika Keränen, Arto Aho, Mircea Guina
Publikováno v:
Solar Energy Materials and Solar Cells. 248:111987
High performance narrow-bandgap GaInNAsSb solar cells are instrumental for the development of lattice-matched GaAs-based solar cells with more than four junctions. To this end a comprehensive optimization process including the effects of growth tempe
Autor:
Riku Isoaho, Mircea Guina, Marianna Raappana, Turkka Salminen, Antti Tukiainen, Jarno Reuna, Arto Aho, Timo Aho
Publikováno v:
Solar Energy Materials and Solar Cells
We demonstrate single junction GaInNAsSb solar cells with high nitrogen content, i.e. in the range of 5–8%, and bandgap energies close to 0.7 eV grown by molecular beam epitaxy. A good crystalline quality is demonstrated for the entire range of N c
Autor:
Riku Isoaho, Mircea Guina, Marianna Raappana, Antti Tukiainen, Lauri Hytönen, Arto Aho, Timo Aho, Ville Polojärvi, Jarno Reuna, Severi Makela
Publikováno v:
Progress in Photovoltaics: Research and Applications
Monolithic four‐junction solar cells incorporating two dilute nitride (GaInNAsSb) bottom junctions are reported. The dilute nitride junctions have band gaps of 0.9 and 1.2 eV, while the top junctions have band gaps of 1.4 and 1.9 eV. By using exper
Publikováno v:
Optical and Quantum Electronics
A numerical study of metal front contacts grid spacing for photovoltaic (PV) converter of relatively small area is presented. The model is constructed based on Solcore, an open-source Python-based library. A three-step-process is developed to create
Autor:
Arto Aho, Riku Isoaho, Timo Aho, Ville Polojärvi, Mircea Guina, Antti Tukiainen, Marianna Raappana, Ninja Kajas
Publikováno v:
2020 47th IEEE Photovoltaic Specialists Conference (PVSC)
We report on the development of an advanced front contact grid design applied on GaInP/GaAs/GaInNAsSb solar cells. Unlike in a conventional grid pattern, the busbars are placed outside the active area of the solar cell. This enables minimizing the sh
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7ddfaefeacb34ca533293fc9e12c9589
https://trepo.tuni.fi/handle/10024/131348
https://trepo.tuni.fi/handle/10024/131348
Autor:
Riku Isoaho, Timo Aho, Mircea Guina, Arto Aho, Arttu Hietalahti, Ville Polojärvi, Jari Lyytikäinen, Antti Tukiainen, Jarno Reuna, Leo Peltomaa, Elina Anttola, Marianna Raappana
Publikováno v:
Progress in Photovoltaics: Research and Applications
We report on the progress in developing lattice-matched GaAs-based solar cells with focus on developing AlGaInP, AlGaAs, and GaInNAsSb materials, aiming at achieving a wide spectral coverage, that is, 0.7–2.2 eV. To this end, we first benchmark the
Autor:
Arttu Hietalahti, Marianna Raappana, Timo Aho, Arto Aho, Mircea Guina, Riku Isoaho, Elina Anttola, Jarno Reuna, A. Tukiainen
Publikováno v:
Nanotechnology
Using nanoscale sub-wavelength structures to reduce the unwanted reflection losses is an effective way to go beyond the limits of planar anti-reflective coatings. A new method for modification of planar multilayer structures to create nanostructured
Publikováno v:
Journal of Crystal Growth
Bandgap energy of dilute nitride GaInNAsSb/GaAs alloys with N compositions as high as 8% are estimated using a method based on band anti-crossing model used for GaNAs/GaNSb/InNAs/InNSb ternary compounds. The parametrization of the model is defined by