Zobrazeno 1 - 10
of 44
pro vyhledávání: '"Arthur J. Pitera"'
Publikováno v:
IEEE Transactions on Electron Devices. 52:1627-1633
We have experimentally studied impact ionization (II) in the strained-Si layer of a strained-Si/SiGe heterostructure. Our key finding is that the impact ionization multiplication coefficient has a positive temperature coefficient which is opposite to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c427d101e17855bf8f4c98e8e8560dc3
https://doi.org/10.1109/ted.2005.850620
https://doi.org/10.1109/ted.2005.850620
Autor:
Arthur J. Pitera, John A. Carlin, John Boeckl, M.L. Lee, C. L. Andre, Steven A. Ringel, M.A. Smith, Eugene A. Fitzgerald, David M. Wilt
Publikováno v:
IEEE Transactions on Electron Devices. 52:1055-1060
High-performance p/sup +//n GaAs solar cells were grown and processed on compositionally graded Ge-Si/sub 1-x/Ge/sub x/-Si (SiGe) substrates. Total area efficiencies of 18.1% under the AM1.5-G spectrum were measured for 0.0444 cm/sup 2/ solar cells.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f18e1090fb2d018cc37d8c854667f724
https://doi.org/10.1109/ted.2005.848117
https://doi.org/10.1109/ted.2005.848117
Autor:
Minjoo L. Lee, Wee Kiong Choi, Eugene A. Fitzgerald, L. J. Jin, C. H. Tung, D.A. Antoniadis, Kin Leong Pey, Dongzhi Chi, Arthur J. Pitera
Publikováno v:
Thin Solid Films. :151-155
The reaction of Ni with Ge, Si 0.75 Ge 0.25 and Si using rapid thermal annealing (RTA) and in-situ annealing method at 400°C produces different phases, as revealed by cross-sectional transmission electron microscopy (TEM). A uniform film of nickel g
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7fa2b15f57eaaffdb27cb8eafa140222
https://doi.org/10.1016/j.tsf.2004.05.047
https://doi.org/10.1016/j.tsf.2004.05.047
Publikováno v:
Solid-State Electronics. 48:1297-1305
Techniques for fabricating strained Si, SiGe, and Ge on-insulator include SIMOX, Ge condensation and wafer bonding. In this paper, a brief introduction of each method is presented, with a detailed discussion of wafer bonding approaches for strained S
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ed0b2d4f840fd303a44d9e5875512683
https://doi.org/10.1016/j.sse.2004.01.012
https://doi.org/10.1016/j.sse.2004.01.012
Autor:
Dimitri A. Antoniadis, Arthur J. Pitera, Minjoo L. Lee, Jong-Wan Jung, Judy L. Hoyt, Zhiyuan Cheng, Eugene A. Fitzgerald
Publikováno v:
Semiconductor Science and Technology. 19:L48-L51
Dual-channel heterostructures, with a tensile strained-Si layer (for electron channel) and a compressively strained-Si0.4Ge0.6 layer (for hole channel) on relaxed-Si0.7Ge0.3-on-insulator (SGOI) substrates were fabricated by bond, etch-back and epitax
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b42bacb56b5ac22da6bff88d26e05b95
https://doi.org/10.1088/0268-1242/19/5/l02
https://doi.org/10.1088/0268-1242/19/5/l02
Autor:
Michael E. Groenert, Matthew T. Currie, Arthur J. Pitera, Christopher W. Leitz, Eugene A. Fitzgerald, Vicky K. Yang
Publikováno v:
Journal of Applied Physics. 93:3859-3865
We have determined the critical cracking thickness, or the thickness beyond which crack formation is favored, in GaAs films grown on Si and SiGe virtual substrates analytically and experimentally. The analytical model predicts a critical cracking thi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5f64a76407128b8bd4118bbf3f43d7ee
https://doi.org/10.1063/1.1558963
https://doi.org/10.1063/1.1558963
Autor:
Harry Lee, Michael E. Groenert, Arthur J. Pitera, Christopher W. Leitz, Rajeev J. Ram, Vicky K. Yang, Eugene A. Fitzgerald
Publikováno v:
Journal of Applied Physics. 93:362-367
GaAs/AlxGa(1−x)As quantum well lasers have been demonstrated via organometallic chemical vapor deposition on relaxed graded Ge/GexSi(1−x) virtual substrates on Si. A number of GaAs/Ge/Si integration issues including Ge autodoping behavior in GaAs
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5ad00ec3795a3f9beecbd99427d277ad
https://doi.org/10.1063/1.1525865
https://doi.org/10.1063/1.1525865
Autor:
Gianni Taraschi, Matthew T. Currie, Christopher W. Leitz, Arthur J. Pitera, Z. Y. Cheng, Michael E. Groenert, Eugene A. Fitzgerald, Vicky K. Yang
Publikováno v:
Journal of Materials Science: Materials in Electronics. 13:377-380
Working optical links epitaxially grown by atmospheric MOCVD and fabricated on Si via SiGe virtual substrates are demonstrated for the first time. The SiGe virtual substrates are graded from Si substrates to 100% Ge. Because of the 0.07% lattice mism
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bb1b21f612e11f633509c07a1a89cbcc
https://doi.org/10.1023/a:1016006824115
https://doi.org/10.1023/a:1016006824115
Autor:
Arthur J. Pitera, C. L. Andre, Eugene A. Fitzgerald, Steven A. Ringel, Matthew Lueck, M.L. Lee
Publikováno v:
IEEE Electron Device Letters. 27:142-144
Dual junction GaInP/GaAs solar cells have been grown and fabricated on Si substrates using relaxed, compositionally graded SiGe buffer layers that provide a nearly lattice-matched low threading dislocation Ge surface for subsequent cell growth. The d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f19fe7b754e597cb0e66adb6d190d96c
https://doi.org/10.1109/led.2006.870250
https://doi.org/10.1109/led.2006.870250
Autor:
Arthur J. Pitera, J. J. Boeckl, Minjoo L. Lee, Brian Keyes, Steven A. Ringel, C. L. Andre, Eugene A. Fitzgerald, David M. Wilt
Publikováno v:
Applied Physics Letters. 84:3447-3449
The minority carrier lifetime of electrons (τn) in p-type GaAs double heterostructures grown on GaAs substrates and compositionally graded Ge/Si1−xGex/Si (SiGe) substrates with varying threading dislocation densities (TDDs) were measured at room t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ac04450036cedec1da0c8b23e786dd8c
https://doi.org/10.1063/1.1736318
https://doi.org/10.1063/1.1736318