Zobrazeno 1 - 10
of 59
pro vyhledávání: '"Arthur H. Edwards"'
Autor:
Peter A. Schultz, Arthur H. Edwards, Renee M. Van Ginhoven, Harold P. Hjalmarson, Andrew M. Mounce
Publikováno v:
Physical Review B. 107
Publikováno v:
Physical Review B. 105
Publikováno v:
Physical Review B. 103
Using the local moment counter charge (LMCC) method to accurately represent the asymptotic electrostatic boundary conditions within density functional theory supercell calculations, we present a comprehensive analysis of the atomic structure and ener
Autor:
Arthur H. Edwards, Michael N. Kozicki, Wenhao Chen, Y. Gonzalez-Velo, Hugh J. Barnaby, J. L. Taggart, Mehmet B. Balaban, A. Mahmud, Keith E. Holbert, Runchen Fang
Publikováno v:
IEEE Transactions on Nuclear Science. 64:269-276
In this paper, the operation and effects of radiation on Programmable Metallization Cells (PMC) memory and selector devices are analyzed and discussed. The Ag- or Cu-Ge30Se70 devices demonstrate non-volatile memory switching characteristics while the
Autor:
W. Chen, Shimeng Yu, Weijie Yu, Y. Gonzalez-Velo, Arthur H. Edwards, Michael N. Kozicki, Hugh J. Barnaby, Keith E. Holbert, Runchen Fang
Publikováno v:
IEEE Transactions on Nuclear Science. 62:2404-2411
The Cu-SiO 2 based programmable metallization cell (PMC) is a promising alternative to the Ag-chalcogenide glass PMC because of its low power consumption and CMOS-compatibility. Understanding its total ionizing dose (TID) response helps in assessing
Publikováno v:
Proceedings of the IEEE. 103:1000-1003
The articles in this special issue focus on reconfigurable systems. Reconfigurability is about ‘‘change,’’ specifically soft-defined change, whereby through the manipulation of bit sequences we can customize the properties of components, and
Autor:
Hugh J. Barnaby, Kristy A. Campbell, Wei Liu, Arthur H. Edwards, Michael N. Kozicki, Matthew J. Marinella
Publikováno v:
Proceedings of the IEEE. 103:1004-1033
In this paper, we present a review of the state of the art in memristor technologies. Along with ionic conducting devices [i.e., conductive bridging random access memory (CBRAM)], we include phase change, and organic/organo–metallic technologies, a
Autor:
Y. Gonzalez-Velo, Saba Rajabi, D. Mahalanabis, Mehdi Saremi, Michael N. Kozicki, A. Mahmud, Hugh J. Barnaby, Maria Mitkova, Arthur H. Edwards
Publikováno v:
Solid-State Electronics. 106:27-33
Programmable metallization cell (PMC) devices work by growing and dissolving a conducting metallic bridge across a chalcogenide glass (ChG) solid electrolyte, which changes the resistance of the cell. PMC operation relies on the incorporation of meta
Publikováno v:
Proceedings of the IEEE. 103:287-290
The articles in this special issues are the first of two special issues that will provide an in-depth treatment of the subject of reconfigurable systems as enabled through advancements in the electrical engineering field, as well as the approaches we
Publikováno v:
Proceedings of the IEEE. 103:291-317
Reconfigurability can be thought of as software-defined functionality, where flexibility is controlled predominately through the specification of bit patterns. Reconfigurable systems can be as simple as a single switch, or as abstract and powerful as