Zobrazeno 1 - 10
of 15
pro vyhledávání: '"Arthur Bowman"'
Autor:
Upendra Rijal, Hsun-Jen Chuang, Jiaqiang Yan, Arthur Bowman, David Mandrus, Michael R. Koehler, Zhixian Zhou, Pai-Yen Chen, Kraig Andrews
Publikováno v:
ACS Applied Nano Materials. 4:5598-5610
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::73f62662a2b0ac84de6dccb65d7b3080
https://doi.org/10.1021/acsanm.1c01138
https://doi.org/10.1021/acsanm.1c01138
Autor:
Thayer S. Walmsley, Kraig Andrews, Tianjiao Wang, Ya-Qiong Xu, Christian D. Ornelas, Arthur Bowman, Zhixian Zhou
Publikováno v:
ACS Applied Materials & Interfaces. 12:46476-46482
Two-dimensional (2D) transition metal dichalcogenide (TMDC) materials have garnered great attention on account of their novel properties and potential to advance modern technology. Recent studies have demonstrated that TMDCs can be utilized to create
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::05fa3c172ac6ef3adc704dcfbd3539f7
https://doi.org/10.1021/acsami.0c12155
https://doi.org/10.1021/acsami.0c12155
Publikováno v:
ACS Nano. 14:6232-6241
We report a contact engineering method to minimize the Schottky barrier height (SBH) and contact resistivity of MoS2 field-effect transistors (FETs) by using ultrathin 2D semiconductors as contact interlayers. We demonstrate that the addition of a fe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7759c95c6938b81c53d6d6086ebf39f0
https://doi.org/10.1021/acsnano.0c02303
https://doi.org/10.1021/acsnano.0c02303
Autor:
Upendra Rijal, Zhixian Zhou, Thayer S. Walmsley, Amanda Haglund, David Mandrus, Ya-Qiong Xu, Kraig Andrews, Tianjiao Wang, Arthur Bowman
Publikováno v:
Nanoscale. 11:14410-14416
We investigate electronic and optoelectronic properties of few-layer palladium diselenide (PdSe2) phototransistors through spatially-resolved photocurrent measurements. A strong photocurrent resonance peak is observed at 1060 nm (1.17 eV), likely att
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::27a2075ca377a67d71a4d0d386184f0a
https://doi.org/10.1039/c9nr03505b
https://doi.org/10.1039/c9nr03505b
Publikováno v:
Nanoscale. 11:7358-7363
We report a reversible photo-induced doping effect in two-dimensional (2D) tungsten diselenide (WSe2) field effect transistors on hexagonal boron nitride (h-BN) substrates under low-intensity visible light illumination (∼10 nW μm-2). Our experimen
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fd93d1a820a8b4007c51530f446e67d4
https://doi.org/10.1039/c8nr09929d
https://doi.org/10.1039/c8nr09929d
Autor:
Christian D, Ornelas, Arthur, Bowman, Thayer S, Walmsley, Tianjiao, Wang, Kraig, Andrews, Zhixian, Zhou, Ya-Qiong, Xu
Publikováno v:
ACS applied materialsinterfaces. 12(41)
Two-dimensional (2D) transition metal dichalcogenide (TMDC) materials have garnered great attention on account of their novel properties and potential to advance modern technology. Recent studies have demonstrated that TMDCs can be utilized to create
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::a22ab19547f0a0e1ab10668dea8dfb69
https://pubmed.ncbi.nlm.nih.gov/32867473
https://pubmed.ncbi.nlm.nih.gov/32867473
Publikováno v:
ACS nano. 14(5)
We report a contact engineering method to minimize the Schottky barrier height (SBH) and contact resistivity of MoS
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::a8547c9078298bf06979ee344f684144
https://pubmed.ncbi.nlm.nih.gov/32320204
https://pubmed.ncbi.nlm.nih.gov/32320204
Autor:
Zhixian Zhou, Ya-Qiong Xu, Jiaqiang Yan, David Mandrus, Tianjiao Wang, Tu Hong, Kraig Andrews, Arthur Bowman, Michael R. Koehler
Publikováno v:
Nano Letters. 18:2766-2771
We report high-performance WSe2 phototransistors with two-dimensional (2D) contacts formed between degenerately p-doped WSe2 and undoped WSe2 channel. A photoresponsivity of ∼600 mA/W with a high external quantum efficiency up to 100% and a fast re
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ed8d24c25b5d9e415296d4f364811fd9
https://doi.org/10.1021/acs.nanolett.7b04205
https://doi.org/10.1021/acs.nanolett.7b04205
Autor:
Thayer S, Walmsley, Kraig, Andrews, Tianjiao, Wang, Amanda, Haglund, Upendra, Rijal, Arthur, Bowman, David, Mandrus, Zhixian, Zhou, Ya-Qiong, Xu
Publikováno v:
Nanoscale. 11(30)
We investigate electronic and optoelectronic properties of few-layer palladium diselenide (PdSe2) phototransistors through spatially-resolved photocurrent measurements. A strong photocurrent resonance peak is observed at 1060 nm (1.17 eV), likely att
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::5e64afe2964dacd670215524436f89ab
https://pubmed.ncbi.nlm.nih.gov/31334533
https://pubmed.ncbi.nlm.nih.gov/31334533
Publikováno v:
Nanoscale. 11(15)
We report a reversible photo-induced doping effect in two-dimensional (2D) tungsten diselenide (WSe2) field effect transistors on hexagonal boron nitride (h-BN) substrates under low-intensity visible light illumination (∼10 nW μm-2). Our experimen
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::d75872299c3a7e7d67171c01382332e0
https://pubmed.ncbi.nlm.nih.gov/30938719
https://pubmed.ncbi.nlm.nih.gov/30938719