Zobrazeno 1 - 10
of 11
pro vyhledávání: '"Artemisia Tsiara"'
Autor:
David Coenen, Kristof Croes, Artemisia Tsiara, Herman Oprins, Veerle Simons, Olalla Varela Pedreira, Yoojin Ban, Joris Van Campenhout, Ingrid De Wolf
Publikováno v:
IEEE Transactions on Device and Materials Reliability. 22:417-423
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a03cdaae62034db35fbe296fbad00b19
https://doi.org/10.1109/tdmr.2022.3187822
https://doi.org/10.1109/tdmr.2022.3187822
Autor:
Filippo Ferraro, Peter De Heyn, Minkyu Kim, Natarajan Rajasekaran, Mathias Berciano, Grigorij Muliuk, Dieter Bode, Guy Lepage, Sofie Janssen, Rafal Magdziak, Jeroen De Coster, Hakim Kobbi, Sebastien Lardenois, Negin Golshani, Leili Shiramin, Chiara Marchese, Selva Rajmohan, Shankr Nadarajan, Neha Singh, Sumi Radhakrishnan, Artemisia Tsiara, Pengfei Xu, Ayze Karagoz, Didit Yudistira, Marco Martire, Abdul H. Shahar, Maumita Chakrabarti, Dimitrios Velenis, Wei Guo, Andy Miller, Kristof Croes, Sadhishkumar Balakrishnan, Peter Verheyen, Yoojin Ban, Joris Van Campenhout, Philippe P. Absil
Publikováno v:
Next-Generation Optical Communication: Components, Sub-Systems, and Systems XII.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e72378dc1a16335b4bf5dc0fbeef5002
https://doi.org/10.1117/12.2650579
https://doi.org/10.1117/12.2650579
Autor:
Aleksandrs Marinins, Sebastian Hansch, Huseyin Sar, Francois Chancerel, Negin Golshani, Hsiao-Lun Wang, Artemisia Tsiara, David Coenen, Peter Verheyen, Giovanni Capuz, Yannick De Koninck, Ozan Yilmaz, Geert Morthier, Filip Schleicher, Geraldine Jamieson, Stuart Smyth, Andrew McKee, Yoojin Ban, Marianna Pantouvaki, Douglas Charles La Tulipe, Joris Van Campenhout
Publikováno v:
IEEE Journal of Selected Topics in Quantum Electronics. :1-11
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::814c79531151233db988d3b0c6344c4e
https://doi.org/10.1109/jstqe.2022.3223641
https://doi.org/10.1109/jstqe.2022.3223641
Autor:
Artemisia Tsiara, Alicja Lesniewska, Philippe Roussel, Srinivasan Ashwyn Srinivasan, Mathias Berciano, Marko Simicic, Marianna Pantouvaki, Joris Van Campenhout, Kristof Croes
Publikováno v:
2022 IEEE International Reliability Physics Symposium (IRPS).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1bdc2b40ceb62bf76e6aa5c06d9d600c
https://doi.org/10.1109/irps48227.2022.9764469
https://doi.org/10.1109/irps48227.2022.9764469
Autor:
Ping-Yi Hsieh, Artemisia Tsiara, Barry O'Sullivan, Didit Yudistira, Marina Baryshnikova, Guido Groeseneken, Bernardette Kunert, Marianna Pantouvaki, Joris Van Campenhout, Ingrid De Wolf
Publikováno v:
2022 IEEE International Reliability Physics Symposium (IRPS).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1197339e394993111092d780a4b5c464
https://doi.org/10.1109/irps48227.2022.9764597
https://doi.org/10.1109/irps48227.2022.9764597
Autor:
Phoumra Tan, Marko Simicic, Yoojin Ban, Artemisia Tsiara, Peter De Heyn, Xin Wu, Michael J. Hart, Joris Van Campenhout, Kristof Croes, James Karp, Dimitri Linten, Shih-Hung Chen, Jonathan Chang, Dean Tsaggaris
Publikováno v:
2021 43rd Annual EOS/ESD Symposium (EOS/ESD).
ESD robustness for self-protected advanced Silicon photonic components integrated into optical interposers is reported, including industry-first CDM data. HBM performance in reverse bias polarity is shown to be the limiting factor and is correlated t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::700dafe29d5a7a75f104396cdacd3f84
https://doi.org/10.23919/eos/esd52038.2021.9574767
https://doi.org/10.23919/eos/esd52038.2021.9574767
Autor:
Artemisia Tsiara
Publikováno v:
Micro and nanotechnologies/Microelectronics. Université Grenoble Alpes, 2019. English. ⟨NNT : 2019GREAT010⟩
HAL
HAL
In advanced CMOS technologies, microscopic defects localized at the Si interface (Nit) or within the gate oxide (Nox) degrade the performance of CMOS transistors, by increasing the low frequency noise (LFN). These defects are generally induced by the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::f994e4b2a7c126a82a0e0d0e8658f733
https://theses.hal.science/tel-02328582
https://theses.hal.science/tel-02328582
Publikováno v:
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics, 2017, 35 (1), pp.01A114. ⟨10.1116/1.4973905⟩
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics, AVS through the American Institute of Physics, 2017, 35 (1), pp.01A114. ⟨10.1116/1.4973905⟩
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics, 2017, 35 (1), pp.01A114. ⟨10.1116/1.4973905⟩
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics, AVS through the American Institute of Physics, 2017, 35 (1), pp.01A114. ⟨10.1116/1.4973905⟩
International audience; The time dependent defect spectroscopy method has been used to analyze the impact of low thermal budget (TB) processes on the quality of high-k/metal gate stacks. For n-type metal-oxide-semiconductor field-effect transistors (
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6beaaf4679f61fa58b4ecd9993b2db7a
https://hal.science/hal-01947807
https://hal.science/hal-01947807
Publikováno v:
Book of abstracts of WODIM 2016
19th Workshop on Dielectrics in Microelectronics (WoDIM)
19th Workshop on Dielectrics in Microelectronics (WoDIM), Jun 2016, Catania, Italy
HAL
19th Workshop on Dielectrics in Microelectronics (WoDIM)
19th Workshop on Dielectrics in Microelectronics (WoDIM), Jun 2016, Catania, Italy
HAL
International audience
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::cf37ee27fcbc7383a4ac4a6be6bedabb
https://hal.archives-ouvertes.fr/hal-02051859
https://hal.archives-ouvertes.fr/hal-02051859