Electromigration Performance Improvement of Metal Heaters for Si Photonic Ring Modulators

Autor: David Coenen, Kristof Croes, Artemisia Tsiara, Herman Oprins, Veerle Simons, Olalla Varela Pedreira, Yoojin Ban, Joris Van Campenhout, Ingrid De Wolf

Publikováno v: IEEE Transactions on Device and Materials Reliability. 22:417-423

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::a03cdaae62034db35fbe296fbad00b19
https://doi.org/10.1109/tdmr.2022.3187822

Hot-Carrier Induced Degradation of Ge/Sti Interfaces in Ge-on-Si Junction Devices

Autor: Solomon Musibau, Jacopo Franco, Artemisia Tsiara, Ingrid De Wolf, Kristof Croes

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::58d48c40e9c29751fdc2ce92d29006ab
https://doi.org/10.2139/ssrn.4429241

HBM and CDM ESD Performance of Advanced Silicon Photonic Components

Autor: Phoumra Tan, Marko Simicic, Yoojin Ban, Artemisia Tsiara, Peter De Heyn, Xin Wu, Michael J. Hart, Joris Van Campenhout, Kristof Croes, James Karp, Dimitri Linten, Shih-Hung Chen, Jonathan Chang, Dean Tsaggaris

Publikováno v: 2021 43rd Annual EOS/ESD Symposium (EOS/ESD).

ESD robustness for self-protected advanced Silicon photonic components integrated into optical interposers is reported, including industry-first CDM data. HBM performance in reverse bias polarity is shown to be the limiting factor and is correlated t

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::700dafe29d5a7a75f104396cdacd3f84
https://doi.org/10.23919/eos/esd52038.2021.9574767

Impact of low thermal processes on reliability of high-k/metal gate stacks

Autor: Artemisia Tsiara, Xavier Garros, C.-M. V. Lu, Claire Fenouillet-Beranger, Gerard Ghibaudo

Publikováno v: Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics, 2017, 35 (1), pp.01A114. ⟨10.1116/1.4973905⟩
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics, AVS through the American Institute of Physics, 2017, 35 (1), pp.01A114. ⟨10.1116/1.4973905⟩

International audience; The time dependent defect spectroscopy method has been used to analyze the impact of low thermal budget (TB) processes on the quality of high-k/metal gate stacks. For n-type metal-oxide-semiconductor field-effect transistors (

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6beaaf4679f61fa58b4ecd9993b2db7a
https://hal.science/hal-01947807

Degradation mechanisms and lifetime assessment of Ge Vertical PIN photodetectors

Autor: Croes, K., Simons, V., Truijen, B., Roussel, P., Sever, K., Artemisia Tsiara, Franco, J., Absil, P.

Publikováno v: Scopus-Elsevier

Dark current degradation mechanisms in Ge VPIN photodetectors were studied. A methodology to estimate the failure percentages has been developed and applied. Degradation/recovery processes and Ea-decrease of Idark after stress suggest increased TAT d

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c23dc3836b148502a5f305d83db16f9d
http://www.scopus.com/inward/record.url?eid=2-s2.0-85128946523&partnerID=MN8TOARS