Zobrazeno 1 - 10
of 48
pro vyhledávání: '"Artem Baranov"'
Autor:
A. A. Maksimova, A. V. Uvarov, Ivan A. Morozov, D. A. Kudryashov, Artem Baranov, Alexander S. Gudovskikh
Publikováno v:
Technical Physics Letters. 46:1245-1248
It is shown that the degree of damage of the near-surface layer of p-silicon can be estimated with the aid of a MoOx/p-Si selective contact, the current–voltage characteristics of which are highly sensitive to states on the silicon surface formed d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::faabba21f7fac83f1fe9c32c87b5dc00
https://doi.org/10.1134/s1063785020120202
https://doi.org/10.1134/s1063785020120202
Autor:
Grigorii A. Verkhogliadov, Anvar A. Zakhidov, Dmitry Gets, Eduard Danilovskiy, Sergey V. Makarov, Artem Baranov
Publikováno v:
Journal of Materials Chemistry C. 8:16992-16999
Ionic migration plays an important role in the operation of perovskite-based solar cells and light-emitting diodes. Although ionic migration is a reversible process, it often leads to worsening of the perovskite-based device performance and hysteresi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a6f8b5d2d79e05875b7a76e3628d5e67
https://doi.org/10.1039/d0tc02654a
https://doi.org/10.1039/d0tc02654a
Autor:
Ekaterina Vyacheslavova, Ivan Morozov, Alexander Uvarov, Vladimir Neplokh, Artem Baranov, Alina Maksimova, Alexander Gudovskikh
Publikováno v:
SSRN Electronic Journal.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::438355fe16f0e8cd99fd401b309c0088
https://doi.org/10.2139/ssrn.4241770
https://doi.org/10.2139/ssrn.4241770
Publikováno v:
Technical Physics Letters. 47:96-98
It is shown for the first time that thin boron phosphide (BP) layers on silicon substrates can be formed by low-temperature plasma-enhanced atomic layer deposition at 250°C. Experiments demonstrated the possibility of using these BP/Si interfaces as
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bdd0d97716907c6a8f77a48b0c26d66c
https://doi.org/10.1134/s1063785021010211
https://doi.org/10.1134/s1063785021010211
Autor:
Artem Baranov, A. V. Uvarov, K. S. Zelentsov, Ivan A. Morozov, Alexander S. Gudovskikh, D. A. Kudryashov
Publikováno v:
Materials Today: Proceedings. 19:47-52
The lattice-matched GaP/Si superlattice is proposed to be used as an active material for top junction, which is grown on n–GaP/p-Si heterojunction bottom sub cell. Computer simulations demonstrate that GaP/Si structures with 1-2 nm Si quantum wells
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4a6f9be49bdbcdf0a4ef43c2ffca029d
https://doi.org/10.1016/j.matpr.2019.07.655
https://doi.org/10.1016/j.matpr.2019.07.655
Publikováno v:
Semiconductors. 52:1775-1781
The results of studying the applicability of various etchants for the precision wet etching of structures of monolithic optoelectronic devices containing GaPNAs layers are presented. It is shown that an etchant based on potassium iodide and hydrochlo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1d9581f023e282cc378a1a24eca6f7bf
https://doi.org/10.1134/s1063782618130092
https://doi.org/10.1134/s1063782618130092
Autor:
Vladimir V. Fedorov, A. V. Uvarov, Alexey M. Mozharov, G E Cirlin, K. Yu Shugurov, V. Yu. Mikhailovskii, Alexey D. Bolshakov, Artem Baranov, Vladimir Neplokh, D. A. Kudryashov, Igor Shtrom, Maria Tchernycheva, Ivan Mukhin, G. A. Sapunov
Publikováno v:
Nanotechnology. 31(24)
The influence of hydrogen plasma treatment on electrical and optical properties of the vertical GaN nanowires (NWs)/Si heterostructures synthesized via plasma assisted molecular beam epitaxy is studied. The effect of the treatment is thoroughly studi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::094591a1431ffe23708eb43982578def
https://pubmed.ncbi.nlm.nih.gov/32066120
https://pubmed.ncbi.nlm.nih.gov/32066120
Autor:
D. A. Kudryashov, Artem Baranov, Jean-Paul Kleider, Sylvain Le Gall, Alexander S. Gudovskikh, Anton Yu. Egorov
Publikováno v:
Journal of Applied Physics
Journal of Applied Physics, American Institute of Physics, 2020, 128 (2), pp.023105. ⟨10.1063/1.5134681⟩
Journal of Applied Physics, American Institute of Physics, 2020, 128 (2), pp.023105. ⟨10.1063/1.5134681⟩
International audience; Dilute nitrides lattice-matched to GaP were studied to explore the possibilities to improve their properties by additional indium or arsenic content in the GaPN alloy for further utilization in solar cells. Admittance spectros
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c126f9f8db37330f82fb9163cd3508db
https://hal.archives-ouvertes.fr/hal-02946530/file/1.5134681.pdf
https://hal.archives-ouvertes.fr/hal-02946530/file/1.5134681.pdf
Impact of Interface Recombination on Quantum Efficiency of a‐Si:H/c‐Si Solar Cells Based on Si Wires
Autor:
Alexander Gudovskikh, Dmitry Kudryashov, Artem Baranov, Alexander Uvarov, Ivan Morozov, Alina Maksimova, Ekaterina Vyacheslavova, Demid Kirilenko, Alexey Mozharov
Publikováno v:
physica status solidi (a). 218:2170061
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::14f3fe163313556669d261fd601e562d
https://doi.org/10.1002/pssa.202170061
https://doi.org/10.1002/pssa.202170061
Impact of Interface Recombination on Quantum Efficiency of a‐Si:H/c‐Si Solar Cells Based on Si Wires
Autor:
A. V. Uvarov, D. A. Kudryashov, A. A. Maksimova, Artem Baranov, Demid A. Kirilenko, Ekaterina Vyacheslavova, Alexander S. Gudovskikh, Ivan A. Morozov, Alexey M. Mozharov
Publikováno v:
physica status solidi (a). 218:2100339
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::84aef8cd7cc7f43bc5c250ab8250340d
https://doi.org/10.1002/pssa.202100339
https://doi.org/10.1002/pssa.202100339