Zobrazeno 1 - 10
of 26
pro vyhledávání: '"Artem A. Osipov"'
Autor:
Artem A. Osipov, Alina E. Gagaeva, Anastasiya B. Speshilova, Ekaterina V. Endiiarova, Polina G. Bespalova, Armenak A. Osipov, Ilya A. Belyanov, Kirill S. Tyurikov, Irina A. Tyurikova, Sergey E. Alexandrov
Publikováno v:
Scientific Reports, Vol 13, Iss 1, Pp 1-19 (2023)
Abstract This work is devoted to the development of nanosphere lithography (NSL) technology, which is a low-cost and efficient method to form nanostructures for nanoelectronics, as well as optoelectronic, plasmonic and photovoltaic applications. Crea
Externí odkaz:
https://doaj.org/article/931e0d70f6f7493eaf072e183ca86ab8
Autor:
Artem A. Osipov, Gleb A. Iankevich, Anastasia B. Speshilova, Alina E. Gagaeva, Armenak A. Osipov, Yakov B. Enns, Alexey N. Kazakin, Ekaterina V. Endiiarova, Ilya A. Belyanov, Viktor I. Ivanov, Sergey E. Alexandrov
Publikováno v:
Scientific Reports, Vol 12, Iss 1, Pp 1-15 (2022)
Abstract In this work, we demonstrate the high efficiency of optical emission spectroscopy to estimate the etching profile of silicon structures in SF6/C4F8/O2 plasma. The etching profile is evaluated as a ratio of the emission intensity of the oxyge
Externí odkaz:
https://doaj.org/article/c17a47dbb61149f3919f84e4fcf4234c
Autor:
Artem A. Osipov, Nikolai A. Andrianov, Anastasia B. Speshilova, Alina E. Gagaeva, Sarah Risquez, Alexandr Vorobyev, Sergey E. Alexandrov
Publikováno v:
Plasma Chemistry and Plasma Processing. 43:697-707
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a9a7e53f2c98d7f39d700eea4d629e2b
https://doi.org/10.1007/s11090-023-10318-x
https://doi.org/10.1007/s11090-023-10318-x
Autor:
Artem A. Osipov, Sergey V. Karakchiev, Gleb A. Iankevich, Armenak A. Osipov, Svetlana N. Levina, E.V. Endiiarova, Anna A. Karakchieva, Anastasiya B. Speshilova, Sergey E. Alexandrov
Publikováno v:
Journal of Manufacturing Processes. 73:316-325
This paper presents the results of an in-depth study of the plasma-chemical etching (PCE) process of single-crystal silicon carbide (SiC) in SF6/O2 inductively coupled plasma (ICP). Using the method of optical emission spectroscopy (OES) we have exam
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::52b370cfa72b06ef0211c79a5c05aaeb
https://doi.org/10.1016/j.jmapro.2021.11.010
https://doi.org/10.1016/j.jmapro.2021.11.010
Autor:
Artem E. Osipov
Publikováno v:
Law, Economics and Management; 81-84
Право, экономика и управление: состояние, проблемы и перспективы; 81-84
Право, экономика и управление: состояние, проблемы и перспективы; 81-84
В статье рассмотрены ключевые тренды цифровизации маркетингового взаимодействия малого и среднего бизнеса с клиентами и потребителям
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::12bfd45652f8b9521445384f6723d549
https://phsreda.com/files/Books/Cover-10423.jpg?req=103505
https://phsreda.com/files/Books/Cover-10423.jpg?req=103505
Publikováno v:
Cellulose. 28:7455-7464
Textile is currently a promising material. Obtaining hydrophobic surfaces on textiles significantly increases its value when used in various fields. In this work we carried out experiments on textile processing. Treatment of textile materials in solu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::59aa6f88990c12d5096d0daaa24d6321
https://doi.org/10.1007/s10570-021-04005-3
https://doi.org/10.1007/s10570-021-04005-3
Autor:
Vladimir I. Berezenko, A. L. Shakhmin, Sergey E. Alexandrov, Anastasiya B. Speshilova, Artem A. Osipov, Gleb A. Iankevich, Armenak A. Osipov
Publikováno v:
Journal of Microelectromechanical Systems. 30:90-95
This work is an extensive study of the plasma chemical etching (PCE) process of single-crystalline lithium niobate (LiNbO3) in the SF6/O2 based inductively coupled plasma (ICP). The influence of the main technological parameters of the LiNbO3 PCE pro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fa337cb1b399f517b71931931e9e832f
https://doi.org/10.1109/jmems.2020.3039350
https://doi.org/10.1109/jmems.2020.3039350
Autor:
Artem V. Osipov
Publikováno v:
Topical issues of law, economic and management; 295-297
Актуальные вопросы права, экономики и управления; 295-297
Актуальные вопросы права, экономики и управления; 295-297
Автор в исследовании изучает критерии, в соответствии с которыми обстоятельства можно расценивать как общеизвестные и не подлежащие до
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::e73a2b3014e9dc32c864cddcbaa9eca3
https://phsreda.com/files/Books/62bc1b3f8c024.jpg?req=102376
https://phsreda.com/files/Books/62bc1b3f8c024.jpg?req=102376
Publikováno v:
Materials Today: Proceedings. 30:599-602
Authors investigated direct plasmachemical etching of silicon with Bosch-process using installation for inductively coupled plasma (PLATRAN-100) in gas area consist of SF6 and CHF3 gases in etching and deposition steps respectively. Defined correlati
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c0e5d6e4801f8859c94ce5803ab99720
https://doi.org/10.1016/j.matpr.2020.01.412
https://doi.org/10.1016/j.matpr.2020.01.412
Autor:
Artem A. Osipov, Gleb A. Iankevich, Anastasiya B. Speshilova, Vladimir I. Berezenko, Sergey E. Alexandrov
Publikováno v:
Materials Today: Proceedings. 30:512-515
Silicon Carbide (SiC) has a wide range of applications in various fields, such as high-strength composite materials, materials for abrasive applications, and etc., but the most interesting is a single-crystal silicon carbide, 3C-SiC, 4H-SiC, 6H-SiC,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3eb236f7d4a227650da0dbf85d9dcec1
https://doi.org/10.1016/j.matpr.2020.01.036
https://doi.org/10.1016/j.matpr.2020.01.036