Zobrazeno 1 - 10
of 18
pro vyhledávání: '"Arseniy Lartsev"'
Autor:
Tom Yager, Arseniy Lartsev, Karin Cedergren, Rositsa Yakimova, Vishal Panchal, Olga Kazakova, Alexander Tzalenchuk, Kyung Ho Kim, Yung Woo Park, Samuel Lara-Avila, Sergey Kubatkin
Publikováno v:
AIP Advances, Vol 5, Iss 8, Pp 087134-087134-7 (2015)
We investigate Ti/Au contacts to monolayer epitaxial graphene on SiC (0001) for applications in quantum resistance metrology. Using three-terminal measurements in the quantum Hall regime we observed variations in contact resistances ranging from a mi
Externí odkaz:
https://doaj.org/article/62c83a6e4fd2445985c6918333e357f3
Autor:
Christos, Melios, Vishal, Panchal, Kieran, Edmonds, Arseniy, Lartsev, Rositsa, Yakimova, Olga, Kazakova
Publikováno v:
ACS sensors. 3(9)
We demonstrate proof-of-concept graphene sensors for environmental monitoring of ultralow concentration NO
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::b15e25d52261c151f68bec30867d7497
https://pubmed.ncbi.nlm.nih.gov/30073834
https://pubmed.ncbi.nlm.nih.gov/30073834
Autor:
Rositsa Yakimova, Kieran Edmonds, Arseniy Lartsev, Vishal Panchal, Christos Melios, Olga Kazakova
Publikováno v:
ACS Sensors
We demonstrate proof-of-concept graphene sensors for environmental monitoring of ultra-low concentration NO2 in complex environments. Robust detection in a wide range of NO2 concentrations, 10-154 ppb, was achieved, highlighting the great potential f
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3cd146f91d9b958b8c53362706d0142e
http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-152092
http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-152092
Autor:
C. Chua, Charles G. Smith, Malcolm R. Connolly, Jinggao Sui, Alexander Tzalenchuk, R. K. Puddy, Vishal Panchal, Tjbm Janssen, Arseniy Lartsev, Rositsa Yakimova, C. L. Richardson, Sergey Kubatkin
Publikováno v:
Carbon
We study electron transport in nanostructures patterned in bilayer graphene patches grown epitaxially on SiC as a function of doping, magnetic field, and temperature. Away from charge neutrality transport is only weakly modulated by changes in carrie
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ea37c554e62a6896d1b5e02add45cf4d
Autor:
Rositsa Yakimova, Ruth Pearce, A. Ya. Tzalenchuk, T.J.B.M. Janssen, Sergey Kopylov, Arseniy Lartsev, Sergey Kubatkin, Charles G. Smith, Vladimir I. Fal'ko, Tom Yager, Samuel Lara-Avila, C. Chua, Malcolm R. Connolly
Publikováno v:
Nano Letters. 14:3369-3373
We study an epitaxial graphene monolayer with bilayer inclusions via magnetotransport measurements and scanning gate microscopy at low temperatures. We find that bilayer inclusions can be metallic or insulating depending on the initial and gated carr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7948cec214154036cf58bf00eb64363b
https://doi.org/10.1021/nl5008757
https://doi.org/10.1021/nl5008757
Autor:
Arseniy Lartsev, Jonathan Helmore, Ling Hao, Rositsa Yakimova, V. Eless, R. E. Hill-Pearce, John Gallop, Nicholas A. Martin, I. L. Barker Snook
The effect of a bilayer area on the electronic response to environmental gating of a monolayer graphene Hall bar device is investigated using room temperature magnetotransport and scanning Kelvin probe microscopy measurements in a controlled environm
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0b0e1382998e99f45f8c95af45f415c7
http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-121418
http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-121418
Magnetotransport measurements on Hall bar devices fabricated on purely monolayer epitaxial graphene on silicon carbide (SiC/G) show a very tight spread in carrier concentration and mobility across wafer-size dimensions. In contrast, SiC/G devices con
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ceb2a6d4e2ae0149755804b81bf2c3cd
http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-117779
http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-117779
Autor:
Alexander Tzalenchuk, Samuel Lara-Avila, Sergey Kubatkin, Arseniy Lartsev, Rositsa Yakimova, Andrey Danilov
Publikováno v:
Journal of Applied Physics (0021-8979) vol.118(2015)
Epitaxial graphene on silicon carbide is a promising material for the next generation of quantum Hall resistance standards. Single Hall bars made of graphene have already surpassed their state-of-the-art GaAs based counterparts as an R-K/2 (RK = h/e(
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f532141662ede854ad16e035bfacb57a
http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-120874
http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-120874
Autor:
Alessandra Manzin, Arseniy Lartsev, Alexander Tzalenchuk, Olga Kazakova, Vishal Panchal, Rositza Yakimova
Publikováno v:
Scientific Reports
Using local scanning electrical techniques we study edge effects in side-gated Hall nanodevices made of epitaxial graphene. We demonstrate that lithographically defined edges of the graphene channel exhibit hole conduction within the narrow band of ~
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c72258e5b729f28951666ea078e91838
https://doi.org/10.1038/srep05881
https://doi.org/10.1038/srep05881
Publikováno v:
Frontiers in Physics, Vol 2 (2014)
We present experimental studies of both local and macroscopic electrical effects in uniform single- (1LG) and bi-layer graphene (2LG) devices as well as in devices with non-uniform graphene coverage, under ambient conditions. DC transport measurement
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::76f309e5b67b911bdc90fad328ce5a84
http://journal.frontiersin.org/Journal/10.3389/fphy.2014.00003/full
http://journal.frontiersin.org/Journal/10.3389/fphy.2014.00003/full