Výsledky vyhledávání - "Arseneto de galio"

Dissertation/ Thesis

Síntese por feixe de íons de GaN-layer sobre GaAs

Autor: Coelho Júnior, Horácio

Publikováno v: Biblioteca Digital de Teses e Dissertações da UFRGSUniversidade Federal do Rio Grande do SulUFRGS.

O Nitreto de Gálio (GaN) é um semicondutor de gap direto, motivo de numerosas pesquisas científicas, principalmente devido a sua importância na fabricação de dispositivos de alta potência e optoeletrônicas. Ligas de GaN como InGaN e AlGaN, po

Externí odkaz: http://hdl.handle.net/10183/181012

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Dissertation/ Thesis

Uma análise da dinâmica vibracional de cristais por EXAFS

Autor: Antonio, Viviane Peçanha

Publikováno v: Biblioteca Digital de Teses e Dissertações da UFRGSUniversidade Federal do Rio Grande do SulUFRGS.

O objetivo deste trabalho é estudar a dinâmica vibracional de dois materiais cristalinos: o germânio (Ge) e o arseneto de gálio (GaAs) por intermédio da técnica de XAFS. Inicialmente, uma breve revisão baseada nas teorias básicas de livro-tex

Externí odkaz: http://hdl.handle.net/10183/116804

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Controlling alloy composition of InAsP self-assembled quantum dots embedded in GaAs

Autor: Daniel Ugarte, Gilberto Medeiros-Ribeiro, R.L. Maltez, Evaldo Ribeiro, W. Carvalho

Publikováno v: Repositório Institucional da UFRGS
Universidade Federal do Rio Grande do Sul (UFRGS)
instacron:UFRGS

We report on the growth of quantum dot (QD) layers of InAsP alloys buried in GaAs by low-pressure metalorganic chemical vapor deposition. Ternary QDs were obtained by the addition of a PH3 flux during the InAs QD growth, exhibiting recombination ener

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7b9262803c87b12798d349e94648c744
https://doi.org/10.1063/1.1597762

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Thermal stability of the electrical isolation inn-type gallium arsenide layers irradiated with H, He, and B ions

Autor: I. Danilov, Henri Ivanov Boudinov, J. P. de Souza

Publikováno v: Repositório Institucional da UFRGS
Universidade Federal do Rio Grande do Sul (UFRGS)
instacron:UFRGS

The stability of the electrical isolation in n-type GaAs layers irradiated with ions of different mass is compared. The irradiations were performed with proper doses of 1H+, 4He+, or 11B+ ions to create specific damage concentration level which lead

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3f864172726da8f676add0232d76eebb
https://doi.org/10.1063/1.364229

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Lift-off protocols for thin films for use in EXAFS experiments

Autor: Claudia Schnohr, Mark C Ridgway, Patrick Kluth, Leandro Araujo, Bernt Johannessen, Zohair S. Hussain, Christopher Glover, Kristiaan Temst, Raquel Giulian, André Vantomme, Felipe Kremer, S. Decoster, David J. Sprouster, Hazar A. Salama

Publikováno v: Repositório Institucional da UFRGS
Universidade Federal do Rio Grande do Sul (UFRGS)
instacron:UFRGS

Lift-off protocols for thin films for improved extended X-ray absorption fine structure (EXAFS) measurements are presented. Using wet chemical etching of the substrate or the interlayer between the thin film and the substrate, stand-alone high-qualit

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c590e22643f93aa544b332f2805f1477
https://lirias.kuleuven.be/handle/123456789/417348

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Dissertation/ Thesis

Propriedades óticas e de transporte em heteroestruturas semicondutoras contendo GaMnAs

Autor: Rodrigues, Daniel Henrique

Publikováno v: Repositório Institucional da UFSCARUniversidade Federal de São CarlosUFSCAR.

Made available in DSpace on 2016-06-02T20:15:24Z (GMT). No. of bitstreams: 1 3924.pdf: 7419866 bytes, checksum: f261961e660d143baa3b2de0edca2b9f (MD5) Previous issue date: 2011-10-14
Financiadora de Estudos e Projetos
In this work, we have

Externí odkaz: https://repositorio.ufscar.br/handle/ufscar/4936

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Localização de pontos quânticos semicondutores via nanolitografia por oxidação anódica

Autor: Carlos Gabriel Pankiewicz

Publikováno v: Repositório Institucional da UFMG
Universidade Federal de Minas Gerais (UFMG)
instacron:UFMG

Ultimamente tem havido um intenso interesse nas pesquisas sobre heteroestruturas semicondutoras nanoestruturadas. A faixa de emissão de comprimento de onda em torno de 1,55 Â µm recebe atenção especial por ser de fundamental importância na áre

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=od______3056::199bd3ca17d6d2c9126e0fb65236a3b2

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Structural and optical properties of InP quantum dots grown on GaAs(001)

Autor: Godoy, Marcio P.F. de, Nakaema, Marcelo Kiyoshi Kian, Likawa, Fernando, Brasil, Maria José Santos Pompeu, Lopes, João Marcelo Jordão, Bortoleto, José Roberto Ribeiro, Cotta, Mônica Alonso, Paniago, Rogério Magalhães, Mörschbächer, Marcio José, Fichtner, Paulo Fernando Papaleo

Publikováno v: Repositório Institucional da UFRGS
Universidade Federal do Rio Grande do Sul (UFRGS)
instacron:UFRGS

We investigated structural and optical properties of type-II InP/GaAs quantum dots using reflection high energy electron diffraction, transmission electron microscopy, atomic force microscopy, grazing incidence x-ray diffraction, and photoluminescenc

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=od______3056::f465c69bea5d300d7900d111f06d10a2

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Carrier dynamics in stacked InP/GaAs quantum dots

Autor: Veloso, A.B., Nakaema, Marcelo Kiyoshi Kian, Godoy, Marcio P.F. de, Lopes, João Marcelo Jordão, Likawa, Fernando, Brasil, Maria José Santos Pompeu, Bortoleto, José Roberto Ribeiro, Cotta, Mônica Alonso, Fichtner, Paulo Fernando Papaleo, Mörschbächer, Marcio José, Madureira, J.R.

Publikováno v: Repositório Institucional da UFRGS
Universidade Federal do Rio Grande do Sul (UFRGS)
instacron:UFRGS

We investigated two stacked layers of InP/GaAs type-II quantum dots by transmission electron microscopy and optical spectroscopy. The results reveal that InP quantum dots formed in two quantum dot layers are more uniform than those from a single laye

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=od______3056::fb717646d99b03837415e3eef38117f2

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Barrier-induced carrier localization effects in ordered/disordered/ordered quaternary quantum wells grown on GaAs substrates

Autor: Ribeiro, Evaldo, Bernussi, Ayrton Andre, Maltez, Rogério Luis, Carvalho Junior, Wilson, Gobbi, Angelo Luiz

Publikováno v: Repositório Institucional da UFRGS
Universidade Federal do Rio Grande do Sul (UFRGS)
instacron:UFRGS

Optical and micro-structural properties of ordered/disordered/ordered InGaAsP quantum wells grown on GaAs substrates were investigated by photoluminescence spectroscopy, high-resolution transmission electron microscopy and selective area diffraction.

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=od______3056::3f408f764a904e1220e3325e93d4961a

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