Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Arsen Sukiasyan"'
Autor:
Sathya Chary, Ferran Suarez, Ting Liu, Ewelina N. Lucow, Radek Roucka, T. Bilir, Jordan R. Lang, L. Zhang, Sabeur Siala, E. Pickett, I. Aeby, Arsen Sukiasyan
Publikováno v:
E3S Web of Conferences, Vol 16, p 03006 (2017)
A sub-cell with bandgap of around 1 eV is required to improve the efficiency of multi-junction solar cells beyond what is possible with legacy triple-junction architectures [1]. Solar Junction Corporation has been focused since 2007 on the developmen
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8f64a8602324620efad61d296122929e
https://doaj.org/article/e0932f66b75d4bae9bc081c6f14196a7
https://doaj.org/article/e0932f66b75d4bae9bc081c6f14196a7
Autor:
Robert Bergner, Taner Bilir, Ewelina N. Lucow, Arsen Sukiasyan, Daniel Derkacs, Evan Pickett, Mike Wiemer, Ting Liu, Rebecca Elizabeth Jones-Albertus, Ted Sun, Lan Zhang, Ferran Suarez, Pranob Misra, V.A. Sabnis, David Jory, Emily Becker, Onur Fidaner, Homan Yuen
Publikováno v:
MRS Proceedings. 1538:161-166
High quality dilute nitride subcells for multijunction solar cells are achieved using GaInNAsSb. The effects on device performance of Sb composition, strain and purity of the GaInNAsSb material are discussed. New world records in efficiency have been
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f1eb4e3041245a5bb2fed0384ecfcc25
https://doi.org/10.1557/opl.2013.656
https://doi.org/10.1557/opl.2013.656
Autor:
T. Christian, Brian Fluegel, Arsen Sukiasyan, Rebecca Elizabeth Jones-Albertus, Kirstin Alberi, Nancy M. Haegel, F. J. Schultes, Pranob Misra, Homan Yuen, Ting Liu, Evan Pickett
The article of record as published may be found at http://dx.doi.org/10.1063/1.4847635 The mobility of electrons in double heterostructures of p-type Ga{sub 0.50}In{sub 0.50}P has been determined by measuring minority carrier diffusion length and lif
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0b293bd5e1daf00c90918dda7b18b2fb
https://hdl.handle.net/10945/57270
https://hdl.handle.net/10945/57270
Autor:
T. Christian, Homan Yuen, Arsen Sukiasyan, Ting Liu, C. Scandrett, Andrew G. Norman, Evan Pickett, A. Mascarenhas, Pranob Misra, Nancy M. Haegel
Publikováno v:
Applied Physics Letters. 105:202116
Direct imaging of minority electron transport via the spatially resolved recombination luminescence signature has been used to determine carrier diffusion lengths in GaInP as a function of doping. Minority electron mobility values are determined by p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::86a692643645d0e7b9242922a0da395a
https://doi.org/10.1063/1.4902316
https://doi.org/10.1063/1.4902316