Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Arsen Ahmed"'
Autor:
Arsen Ahmed, Hüseyin Demirel
Publikováno v:
Iranian Journal of Electrical and Electronic Engineering, Vol 19, Iss 4, Pp 117-123 (2023)
In the past twenty years, low-voltage and power design have gained attention in analog VLSI design, particularly for high-performance and portable integrated circuits (ICs). Because of the increasing density of large-scale integration, a single silic
Externí odkaz:
https://doaj.org/article/f10997454548452ebe05ddbf1afd5000
Autor:
Arsen AHMED, Hüseyin DEMİREL
Publikováno v:
Gazi Üniversitesi Fen Bilimleri Dergisi, Vol 11, Iss 3, Pp 735-743 (2023)
This paper provides a 3rd order oscillator circuit utilizing CDCTA (Current Differencing Cascaded Trans conductance Amplifiers) to address issues with high power consumption and low oscillation frequency in oscillators. The suggested arrangement prov
Externí odkaz:
https://doaj.org/article/50ffa3ec9a554ba5a5997033949c244f
Publikováno v:
Kirkuk Journal of Science, Vol 12, Iss 2, Pp 271-285 (2017)
This paper describes the realization of the new configuration of an active element namely, Z Copy Current Follower Transconductance Amplifier (ZC-CFTA). In this study, the elliptic 6th order voltage-mode (VM) Band-pass filter was configured based on
Externí odkaz:
https://doaj.org/article/0d6f5d850aff4febaed499455e057589
Publikováno v:
In Journal of Engineering Research September 2024
Autor:
Demirel, Hüseyin1 husdemirel06@gmail.com, Mohammed, Arsen Ahmed2
Publikováno v:
Gazi Journal of Engineering Sciences (GJES) / Gazi Mühendislik Bilimleri Dergisi. Dec2023, Vol. 9 Issue 3, p647-652. 6p.
Study of finfet transistor: critical and literature review in finfet transistor in the active filter
Publikováno v:
3C TIC: Cuadernos de desarrollo aplicados a las TIC. 12:65-81
For several decades, the development of metal-oxide-semiconductor field-effect transistors have made available to us better circuit time and efficiency per function with each successive generation of CMOS technology. However, basic product and manufa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0afd831382967ac4427a34f6e06660fe
https://doi.org/10.17993/3ctic.2023.121.65-81
https://doi.org/10.17993/3ctic.2023.121.65-81
Publikováno v:
Gazi Üniversitesi Fen Bilimleri Dergisi Part C: Tasarım ve Teknoloji; 2023, Vol. 11 Issue 3, p735-743, 9p
Publikováno v:
Periodicals of Engineering and Natural Sciences (PEN). 10:71
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b2ebe4a5845d72d656e5bde6f85c02b7
https://doi.org/10.21533/pen.v10i1.2575
https://doi.org/10.21533/pen.v10i1.2575