Zobrazeno 1 - 10
of 101
pro vyhledávání: '"Arpad Barna"'
Autor:
Miklós Menyhárd, L. Kotis, János L. Lábár, S. Gurban, Attila Sulyok, Peter Panjan, Janez Kovač, Arpad Barna, Attila Tóth
Publikováno v:
Applied Surface Science. 263:367-372
Focused ion beam (FIB)-induced ion mixing was studied in a C/Si/C/Si/C/Si substrate multilayer structure sample by means of Auger electron spectroscopy (AES) depth profiling, and transmission electron microscopy (TEM). The multilayer sample was irrad
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2e0731b71d161415ad93fc1c0e73c889
https://doi.org/10.1016/j.apsusc.2012.09.063
https://doi.org/10.1016/j.apsusc.2012.09.063
Autor:
Miklós Menyhárd, L. Kotis, Béla Pécz, Attila Sulyok, Alexey Savenko, Arpad Barna, György Sáfrán, Attila Tóth, András Kovács
Publikováno v:
Surface and Coatings Technology. 206:3917-3922
Ion-beam mixing in C/Ta layered systems was investigated. C 8 nm/Ta 12 nm and C 20 nm/Ta 19 nm/C 20 nm layer systems were irradiated by Ga + ions of energy in the range of 2–30 keV. In case of the 8 nm and 20 nm thick C cover layers applying 5–8
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f9c892eb2c90a4988251d815c54cdb23
https://doi.org/10.1016/j.surfcoat.2012.03.052
https://doi.org/10.1016/j.surfcoat.2012.03.052
Autor:
Miklós Menyhárd, Mihaly Novak, Tivadar Lohner, Róbert Huszánk, Attila Sulyok, Miklos Fried, G. Juhász, Aliz Simon, Arpad Barna
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 267:2212-2215
To investigate the details of the ion beam induced mixing and validate the Auger electron spectroscopy depth profiling technique, sputter-deposited Si 40 nm/Cr 40 nm multilayer samples were irradiated with a 20 keV CF 4 + ion beam. Due to the ion bom
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f1af02119a0ab78ccd377733d409c431
https://doi.org/10.1016/j.nimb.2009.03.052
https://doi.org/10.1016/j.nimb.2009.03.052
Publikováno v:
Ultramicroscopy. 109:129-132
Medium-energy (some tens of keV) ion irradiation is frequently used in various technologies. It is well known that during this irradiation serious alterations are introduced to the material, changing its structure, composition, etc. While there are s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8c7607726a85b3b25055b572b2544592
https://doi.org/10.1016/j.ultramic.2008.09.002
https://doi.org/10.1016/j.ultramic.2008.09.002
Publikováno v:
Thin Solid Films. 485:235-240
A study is made of the epitaxial growth structure of a Ni film 123 nm thick on the GaAs(001) pre-covered with a TiN film of 3 to 118 nm in thickness. First, the TiN buffer layer is prepared on the GaAs at a temperature from 100 to 700 °C by reactive
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d5c929f46a366ee03711868c4041b9c8
https://doi.org/10.1016/j.tsf.2005.03.028
https://doi.org/10.1016/j.tsf.2005.03.028
Publikováno v:
Applied Surface Science. 242:375-379
It has been shown recently that in case of bilayers ion bombardment induced interface roughening occurs if the sputtering yields of the adjacent layers are strongly different. Now we checked the effect of this mechanism on AES depth profiling if the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7f3c1a65e12c727985a19779bad9541b
https://doi.org/10.1016/j.apsusc.2004.09.002
https://doi.org/10.1016/j.apsusc.2004.09.002
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 21:553-557
A Co/Cu multilayer system, with double layer thickness of about 60 nm was Auger electron spectroscopy depth profiled applying 1 keV Ar+ bombardment, varying the angle of incidence in the range of 78°–86°. It was found that (a) the relative sputte
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fc8fb973d5518bb53879142801937691
https://doi.org/10.1116/1.1559921
https://doi.org/10.1116/1.1559921
Publikováno v:
Diamond & Related Materials 12/3-7 (2003) pp. 1241-1245
Nanocrystals of silicon carbide were synthesized inside natural diamond using high dose silicon implantation. In order to retain the diamond structure, however, implantation was done at 900 °C. The samples were subsequently annealed in an rf-heated
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::65fd2831a7ea15eff5cb3fc7cca5fbc1
https://doi.org/10.1016/s0925-9635(02)00225-x
https://doi.org/10.1016/s0925-9635(02)00225-x
Growth and structure of Ni films radio frequency sputter deposited on GaAs(001) covered with Ti film
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 19:2494-2498
A study is made of the growth mode of Ni films on the GaAs(001) substrates at 300 °C by rf magnetron sputtering. To restrain chemical reaction at the Ni/GaAs interface Ti films thinner than 700 nm are inserted into the interface. Thin film x-ray dif
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f109d76d3c75143f992137069ce18c10
https://doi.org/10.1116/1.1388618
https://doi.org/10.1116/1.1388618
Publikováno v:
Journal of Crystal Growth. 222:235-242
The growth behavior and microstructure of Co–Ge/GaAs films prepared by the high-temperature sequential deposition (HTSD) method have been investigated using X-ray diffraction, cross-sectional transmission electron microscopy, X-ray photoelectron se
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::227f10858087edd0ea2efe100090c4c4
https://doi.org/10.1016/s0022-0248(00)00926-x
https://doi.org/10.1016/s0022-0248(00)00926-x