Zobrazeno 1 - 10
of 13
pro vyhledávání: '"Arnold W. Yanof"'
Autor:
Karen E. Jachimowicz, Arnold W. Yanof
Publikováno v:
SPIE Proceedings.
This work characterizes three different types of sensor defects, and investigates the applicability of the Contrast Threshold Function (CTF) of the human visual system to the manufacturing test criteria for CMOS image sensors. The sensor defect types
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f731c587f095e31d23f16073add3890e
https://doi.org/10.1117/12.525756
https://doi.org/10.1117/12.525756
Autor:
Arnold W. Yanof
Publisher Summary This chapter discusses the critical dimension (CD) scanning electron microscope (CD-SEM) and the optical overlay tools which provide the most important final measurements for lithographic control. Electrical CD measurement is also d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f4c142afaa7ec5515cbe0748da38e844
https://doi.org/10.1016/b978-081551444-2.50006-9
https://doi.org/10.1016/b978-081551444-2.50006-9
Autor:
George W. Banke, John A. Allgair, Michael T. Postek, Alain G. Deleporte, Jerry E. Schlesinger, Charles N. Archie, Arnold W. Yanof, András E. Vladár
Publikováno v:
SPIE Proceedings.
The Advanced Metrology Advisory Group (AMAG) comprised of representatives from International SEMATECH consortium member companies and the National Institute of Standards and Technology have joined to develop a new unified specification for an advance
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::929b28398ca6a512e9ce87f789571b00
https://doi.org/10.1117/12.395750
https://doi.org/10.1117/12.395750
Autor:
Alain G. Deleporte, John A. Allgair, Charles N. Archie, G. W. Banke, Jr., Michael T. Postek, Jr., Jerry E. Schlesinger, Andras E. Vladar, Arnold W. Yanof
Publikováno v:
SPIE Proceedings.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bd3a4ff114ebf2ab15373f39928df082
https://doi.org/10.1117/12.386524
https://doi.org/10.1117/12.386524
Autor:
Frank W. Fischer, Arnold W. Yanof, Vincent E. Plachecki, Marcelo Cusacovich, Mark Andrew Merrill, Chris Nelson
Publikováno v:
SPIE Proceedings.
Although the subject of frequent concern, criticism, and attention in the modern semiconductor fabrication facility, human after develop inspection (ADI) does not catch the major scrap and yield events early enough, if at all. The overall success of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::69b349c3ac30a71b28fc069a97b02011
https://doi.org/10.1117/12.386520
https://doi.org/10.1117/12.386520
Autor:
John N. Helbert, Arnold W. Yanof, A. Daou, Cliff I. Drowley, Clive Hayzelden, James P. Annand, M. Pantel, Carlos L. Ygartua
Publikováno v:
SPIE Proceedings.
The color filter array (CFA) for an image-producing semiconductor device is composed of patterned red-, and green- and blue-colored photoresist structures. CFA photolithography is rather different from that of most semiconductor process levels.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b09bd9389fba56670be869875d2acf16
https://doi.org/10.1117/12.350821
https://doi.org/10.1117/12.350821
Autor:
Herschel M. Marchman, Joseph Edward Griffith, George W. Banke, Bhanwar Singh, Lee Edward Trimble, E. Hal Bogardus, Arnold W. Yanof, Lumdas H. Saraf, Michael T. Postek, John A. Allgair, Neal T. Sullivan, Jerry E. Schlesinger, Charles N. Archie, András E. Vladár
Publikováno v:
SPIE Proceedings.
The stringent critical dimension control requirements in cutting edge device facilities have placed significant demands on metrologists and upon the tools they use. We are developing a unified, advanced critical dimension scanning electron microscope
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4b4c28b986cf18af8b7f992717a3bd53
https://doi.org/10.1117/12.308724
https://doi.org/10.1117/12.308724
Publikováno v:
SPIE Proceedings.
High temperature metal deposition produces large grain size and a highly visible surface morphology due to grain boundaries. When an interconnect layer photoresist pattern is aligned, grainy metal results in noisy signals from optical metrology equip
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fa39ee39a4a142d03083f4af4ec4ea06
https://doi.org/10.1117/12.275960
https://doi.org/10.1117/12.275960
Autor:
Mark Drew, Kevin D. Cummings, Daniel J. DeMay, Arnold W. Yanof, James M. Oberschmidt, Angela C. Lamberti, Robert H. Fair, Philip A. Seese, Matthew A. Thompson
Publikováno v:
SPIE Proceedings.
A joint Motorola/IBM experiment was performed in mix-and-match lithography across widely separated locations. A simple pattern placement metrology data set was created, and x-ray masks were manufactured according to this data. The same data was conve
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::585d03189088441c5952f8cfbb6e5c3a
https://doi.org/10.1117/12.175807
https://doi.org/10.1117/12.175807
Publikováno v:
Electron-Beam, X-Ray, and Ion-Beam Submicrometer Lithographies for Manufacturing III.
It is widely recognized that the 1:1 x-ray mask is the most technically challenging aspect of proximity x-ray lithography, since high resolution and precise pattern placement must be achieved completely free of defects. SEM investigation is an excell
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a9d2183bb8d3c8f61f08d11452fb6396
https://doi.org/10.1117/12.146523
https://doi.org/10.1117/12.146523