Výsledky vyhledávání - "Arnel A. Salvador"

Akademický článek

Autor: Jessica P. C. Afalla, Alexander de los Reyes, Valynn Katrine Mag-usara, Lorenzo P. Lopez Jr., Kohji Yamamoto, Masahiko Tani, Armando S. Somintac, Arnel A. Salvador, Elmer S. Estacio

Publikováno v: AIP Advances, Vol 7, Iss 12, Pp 125210-125210-8 (2017)

Simultaneous molecular beam epitaxial growth of GaAs/AlGaAs multiple quantum wells on two different substrates (one on GaAs (100) and another on a GaAs substrate misoriented by 4° in the (111) direction) resulted in samples of similar structure, but

Externí odkaz: https://doaj.org/article/bfdef467e1f04364ad412a437f408adc

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Akademický článek

Fabrication and characterization of porous silicon for photonic applications

Autor: Arvin I. Mabilangan, Niel Gabriel E. Saplagio, Eloise P. Anguluan, Neil Irvin F. Cabello, Rhona Olivia M. Gonzales, Armando S. Somintac, Arnel A. Salvador

Publikováno v: Science Diliman, Vol 25, Iss 1, Pp 16-26 (2013)

Porous silicon (PSi) thin films from p-type silicon (100) substrates were fabricated using a simple table top electrochemical etching setup with a 1:1 HF:EtOh electrolyte solution. Porous silicon f ilms with different morphologies and optical propert

Externí odkaz: https://doaj.org/article/4370a7012b114f619190176bf58d6424

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Akademický článek

Growth of anatase titanium dioxide nanotubes via anodization

Autor: Ed Adrian Dilla, Renato Daclan, Michael J. Defensor, Celestino Andrew M. Borja, Arnel A. Salvador, Armando S. Somintac

Publikováno v: Science Diliman, Vol 24, Iss 1, Pp 33-42 (2012)

In this work, titanium dioxide nanotubes were grown via anodization of sputtered titanium thin films using different anodization parameters in order to formulate a method of producing long anatase titanium dioxide nanotubes intended for solar cell ap

Externí odkaz: https://doaj.org/article/0f319bb1f8424fbdb6944576fc9e9eaa

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Akademický článek

Optimization of anodized aluminum oxide pore morphology for GaAs nanowire growth

Autor: Regine A. Loberternos, Oliver D. Semblante, Rogelio G. Dizon, Claude R. Ceniza, Jasher John A. Ibanes, Arnel A. Salvador, Armando S. Somintac

Publikováno v: Science Diliman, Vol 22, Iss 1, Pp 19-25 (2010)

Anodic Aluminum oxide films were produced by anodization of sputtered Aluminum thin films on Silicon substrates. The effects of anodization voltage and aqueous oxalic acid solution on the pore diameter and interpore distance were studied. Parameters

Externí odkaz: https://doaj.org/article/9f52c00cafd54b0ba20b163b8d486331

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Akademický článek

Growth of Gold-assisted Gallium Arsenide Nanowires on Silicon Substrates via Molecular Beam Epitaxy

Autor: Ramon M. delos Santos, Jasher John A. Ibañes, Joel G. Fernando, Rafael B. Jaculbia, Jorge Michael M. Presto, Michael J. Defensor, Michelle B. Somintac, Paul Concepcion, Arnel A. Salvador, Armando Somintac

Publikováno v: Science Diliman, Vol 20, Iss 1, Pp 31-38 (2008)

Gallium arsenide nanowires were grown on silicon (100) substrates by what is called the vapor-liquid-solid (VLS) growth mechanism using a molecular beam epitaxy (MBE) system. Good quality nanowires with surface density of approximately 108 nanowires

Externí odkaz: https://doaj.org/article/53ba9164664b4c3ba62c685a403bb86f

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