Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Arne Ungeheuer"'
Autor:
Arne Ungeheuer, Nora Bach, Mashood T. Mir, Ahmed S. Hassanien, Lukas Nöding, Thomas Baumert, Sascha Schäfer, Arne Senftleben
Publikováno v:
Structural Dynamics, Vol 11, Iss 1, Pp 014501-014501-10 (2024)
Femtosecond optically excited coherent acoustic phonon modes (CAPs) are investigated in a free-standing van der Waals heterostructure composed of a 20-nm transparent hexagonal boron nitride (hBN) and a 42-nm opaque graphite layer. Employing ultrafast
Externí odkaz:
https://doaj.org/article/fb288bbe549e41b4add6c7cc34df9705
Autor:
Arne Ungeheuer, Ahmed S. Hassanien, Mashood T. Mir, Lukas Nöding, Thomas Baumert, Arne Senftleben
Publikováno v:
The Journal of Physical Chemistry C. 126:19822-19833
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f2efba8e3d99b155eb2492b9eb6ccb3c
https://doi.org/10.1021/acs.jpcc.2c06401
https://doi.org/10.1021/acs.jpcc.2c06401
Autor:
Arne Ungeheuer, Emanuele Pelucchi, Stefano T. Moroni, Christian Heyn, Gediminas Juska, Wolfgang Hansen, A. Küster
Publikováno v:
Nanoscale Research Letters
Strain-free epitaxial quantum dots (QDs) are fabricated by a combination of Al local droplet etching (LDE) of nanoholes in AlGaAs surfaces and subsequent hole filling with GaAs. The whole process is performed in a conventional molecular beam epitaxy
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::895eb06321605c663456a514d5454a80
https://hdl.handle.net/10468/3156
https://hdl.handle.net/10468/3156
