Zobrazeno 1 - 10
of 27
pro vyhledávání: '"Arndt Jaeger"'
Autor:
Arndt Jaeger, Marwan Bou Sanayeh, Helmut Meinert, Manuel Härer, O. Yu. Makarov, I. E. Titkov, Nikolay Ledentsov, Nikolay N. Ledentsov
Publikováno v:
Vertical-Cavity Surface-Emitting Lasers XXVI.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cdde6774e9dade23234ae094216a9eb4
https://doi.org/10.1117/12.2608674
https://doi.org/10.1117/12.2608674
Autor:
Marcus Halik, Dominik Pentlehner, Günter Schmid, Arndt Jaeger, Anna Maltenberger, Marina A. Petrukhina, Sébastien Pecqueur
Publikováno v:
Angewandte Chemie. 128:10649-10653
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::abeaac3f05c3531e0e5d538fb3651f27
https://doi.org/10.1002/ange.201601926
https://doi.org/10.1002/ange.201601926
Autor:
Klaus Thonke, Arndt Jaeger, Paola Altieri-Weimar, Rolf Sauer, Klaus Streubel, Peter Stauss, Thomas Lutz
Publikováno v:
Journal of Materials Science: Materials in Electronics. 19:338-341
The aging behavior of red-orange AlGaInP light-emitting diodes (LEDs) is investigated. It is found that the amount of magnesium and tellurium doping as well as of the oxygen incorporation influence the device degradation. The generation of non-radiat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c54dc02f08875414b5be631723438992
https://doi.org/10.1007/s10854-008-9575-7
https://doi.org/10.1007/s10854-008-9575-7
Publikováno v:
IEEE Journal of Selected Topics in Quantum Electronics. 8:321-332
This paper reviews the recent progress of AlGaInP high brightness light-emitting diodes. After the discussion of some basic material properties and the general problem of light extraction we will discuss several approaches of high efficiency devices.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2e93cf4c563cbb9bd46d1f4fa8f3cd8f
https://doi.org/10.1109/2944.999187
https://doi.org/10.1109/2944.999187
Publikováno v:
Physica E: Low-dimensional Systems and Nanostructures. 7:494-498
We present a novel self-assembled quantum dot structure designed to spatially separate and store photo-generated electrons and holes in pairs of strain coupled quantum dots. The spatial separation of electron–hole pairs into quantum dots and strain
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0fac851ef4ec7ad3414a2c6c91f2ea89
https://doi.org/10.1016/s1386-9477(99)00367-7
https://doi.org/10.1016/s1386-9477(99)00367-7
Autor:
Arndt Jaeger, Thomas Elsaesser, A. Bärwolff, A. Gerhardt, J. Donecker, Jens W. Tomm, J. Bollmann, William Ted Masselink
Publikováno v:
Journal of Applied Physics. 84:1325-1332
Deep defect centers in high-power AlGaAs/GaAs laser diode arrays emitting at a wavelength of 808 nm are studied by Fourier-transform photocurrent spectroscopy and by electrical deep level transient spectroscopy. Different types of deep centers with b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e75235d6dfeb33cf3317f49b24be5fd5
https://doi.org/10.1063/1.368201
https://doi.org/10.1063/1.368201
Publikováno v:
Applied Physics A: Materials Science & Processing. 66:483-486
We report on micro-Raman facet temperature measurements carried out in asymmetrically coated high-power laser diode arrays. Facet temperatures of up to 600 °C are reproducibly found for high-power operation. The data are modeled using an approach ba
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0ef3de9ef917d3fba4abbdabc32b4966
https://doi.org/10.1007/s003390050700
https://doi.org/10.1007/s003390050700
Autor:
Wolfgang Schmid, Marc Ilegems, Arndt Jaeger, R. P. Stanley, R. Joray, K. Streubel, Ralph Wirth, Rainer Butendeich
Publikováno v:
IEEE Photonics Technology Letters. 18:1052-1054
AlGaInP thin-film resonant cavity light-emitting diodes (RCLEDs) show an improved performance compared to standard red emitting RCLEDs. External quantum efficiencies at 650 nm of 23% and 18% with and without encapsulation, respectively, have been obt
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5ad22d5a4dcba52468c66265efe9a990
https://doi.org/10.1109/lpt.2006.873553
https://doi.org/10.1109/lpt.2006.873553
Autor:
Thomas Dobbertin, Carola Diez, Cristina Dubceac, Günter Schmid, Anna Maltenberger, Marina A. Petrukhina, Jan Hauke Wemken, Arndt Jaeger, Oleksandr Hietsoi
Publikováno v:
Advanced materials (Deerfield Beach, Fla.). 26(6)
Volatile copper(I) benzoates with variable degrees of fluorination are used for p-doping of organic hole-transport layers in single-carrier devices, charge-generation layers, and in organic light-emitting diodes. The charge-transport abilities of the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a8cfd96d6f73bf798e7fed6bdaeed525
https://pubmed.ncbi.nlm.nih.gov/24510663
https://pubmed.ncbi.nlm.nih.gov/24510663
Autor:
Daniel Steffen Setz, Tobias D. Schmidt, Norbert Danz, Dirk Michaelis, Carola Diez, Bert J. Scholz, Wolfgang Brütting, Arndt Jaeger, Michael Flämmich
The efficiency decrease during electrical operation of organic light-emitting diodes is a crucial issue for both applied and fundamental research. In order to investigate degradation processes, we have performed an efficiency analysis for phosphoresc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4e74cd89abda3a8935f9fc560ff3dc0a
https://publica.fraunhofer.de/handle/publica/229857
https://publica.fraunhofer.de/handle/publica/229857
