Zobrazeno 1 - 10
of 19
pro vyhledávání: '"Arnd Dietrich Weber"'
Publikováno v:
Materials Science Forum. 924:5-10
SEMI Standards charter is to develop standards that benefit the semiconductor industry. The SEMI organization has evolved over the last 40 years into an international organization with covering all aspects of semiconductor and flat panel materials an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d9a8394e3e023515f51cf7b96ec4c469
https://doi.org/10.4028/www.scientific.net/msf.924.5
https://doi.org/10.4028/www.scientific.net/msf.924.5
Autor:
Eduard Volz, Patrick Berwian, Georg Müller, Jochen Friedrich, Gerd Trachta, Erdmann Spiecker, Arnd-Dietrich Weber, Bernd Thomas, Birgit Kallinger
Publikováno v:
Journal of Crystal Growth. 349:43-49
The impact of doping on the lattice constants of 4H–silicon carbide (4H–SiC) is an important material aspect influencing several steps of material and device production. Dopant incorporation in 4H–SiC causes misfit between the highly N-doped su
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::169bc4e575dd0093ece120fed339a2cf
https://doi.org/10.1016/j.jcrysgro.2012.03.057
https://doi.org/10.1016/j.jcrysgro.2012.03.057
Autor:
Birgit Kallinger, Arnd Dietrich Weber, Bernd Thomas, Patrick Berwian, Gerd Trachta, Jochen Friedrich
Publikováno v:
Materials Science Forum. :55-58
Homoepitaxial growth on 4° off-axis substrates with different off-cut directions, i.e. [11-20] and [1-100], was investigated using a commercial CVD reactor. The characteristics of the growth process on substrates with different off-cut directions we
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::971d5385ece1758a0c43995a81beb9ce
https://doi.org/10.4028/www.scientific.net/msf.679-680.55
https://doi.org/10.4028/www.scientific.net/msf.679-680.55
Autor:
Arnd Dietrich Weber, Jochen Friedrich, Patrick Berwian, S. Polster, Birgit Kallinger, Georg Müller, A. Wehrhahn, A. N. Danilewsky
Publikováno v:
Journal of Crystal Growth. 314:21-29
A comprehensive study on the etching behaviour of threading dislocations in n-type substrates and n- and p-type homoepitaxial layers was performed. Defect selective etching (DSE) in molten KOH was applied to a large number of substrates and homoepita
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::872bc913a9bf66dc15f1de851d0e3c9a
https://doi.org/10.1016/j.jcrysgro.2010.10.145
https://doi.org/10.1016/j.jcrysgro.2010.10.145
Autor:
P. Sasahara, Janna R. B. Casady, Arnd Dietrich Weber, Erwin Schmitt, Richard L. Woodin, Gary M. Dolny, J. Shovlin, Jeff B. Casady, Tony Witt, Thomas Straubinger
Publikováno v:
Materials Science Forum. :223-226
We report here an anisotropic increase in SiC bulk resistivity by annealing at 1150 °C, and discuss the implications for SiC devices. The increase in resistivity is resistivity dependent and can be (at least) partially reversed by a subsequent annea
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c186b12fd1443445feffe7d2a27c2108
https://doi.org/10.4028/www.scientific.net/msf.645-648.223
https://doi.org/10.4028/www.scientific.net/msf.645-648.223
Autor:
Andreas Wohlfart, Michael Vogel, Erwin Schmitt, Arnd Dietrich Weber, S. Storm, Thomas Straubinger
Publikováno v:
Materials Science Forum. :3-8
One of the most crucial defects for the device fabrication on silicon carbide (SiC) substrates are areas with low crystalline quality and micro-pipe clusters which can still occupy several percent of the area in commercial available 4H-substrates. Th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b80a6527d6a81638ca7020cedddcbc9c
https://doi.org/10.4028/www.scientific.net/msf.645-648.3
https://doi.org/10.4028/www.scientific.net/msf.645-648.3
Publikováno v:
Materials Science Forum. :3-8
For several years the major focus of material issues in SiC substrates was laid on the reduction of macroscopic defects like polytype inclusions, low angle grain boundaries and micropipes. Since then significant improvements have been achieved and mi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::95147a7325daf3a528f8317fbe5ba7eb
https://doi.org/10.4028/www.scientific.net/msf.556-557.3
https://doi.org/10.4028/www.scientific.net/msf.556-557.3
Autor:
William M. Vetter, Cem Basceri, Jian Wei Wan, E.P. Carlson, Austin Blew, Arnd Dietrich Weber, Michael Dudley, F. Burkeen, M.S. Goorsky, V. Velidandla, Ejiro Emorhokpor, James D. Oliver, F. Orazio, R. S. Sandhu, Jason Ronald Jenny, A. Somanchi
Publikováno v:
Materials Science Forum. :443-446
Micropipe density (MPD) is a crucial parameter for silicon carbide (SiC) substrates that determines the quality, stability and yield of the semiconductor devices built on these substrates. The importance of MPD is underscored by the fact that all exi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e6a8532125372123f8224a3e74fadbfe
https://doi.org/10.4028/www.scientific.net/msf.527-529.443
https://doi.org/10.4028/www.scientific.net/msf.527-529.443
Publikováno v:
Superlattices and Microstructures. 40:320-327
For several years the major focus of material issues in SiC substrates was laid on the reduction of macroscopic defects like polytype inclusions, low angle grain boundaries and micropipes. Although significant improvements have been achieved, there a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f17af633db7dcf583bd1035a850200bb
https://doi.org/10.1016/j.spmi.2006.06.007
https://doi.org/10.1016/j.spmi.2006.06.007
Autor:
Rainer Hock, P. Berwian, Georg Müller, Arnd Dietrich Weber, Stefan Jost, Frank Hergert, M. Purwins
Publikováno v:
Journal of Crystal Growth. 287:408-413
The reaction kinetics of stacked layers of binary In-, Ga- and Cu-selenides is investigated by differential thermal analysis using different constant heating rates. We found that the kinetics of the formation of CuInSe 2 depends on the binary selenid
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::326372a510366a8ae6ad7cc99c34d8ef
https://doi.org/10.1016/j.jcrysgro.2005.11.054
https://doi.org/10.1016/j.jcrysgro.2005.11.054