Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Arnault, E. G."'
Autor:
Seredinski, A., Arnault, E. G., Costa, V. Z., Zhao, L., Larson, T. F. Q., Watanabe, K., Taniguchi, T., Amet, F., Newaz, A. K. M., Finkelstein, G.
Establishing ohmic contact to van der Waals semiconductors such as MoS2 is crucial to unlocking their full potential in next-generation electronic devices. Encapsulation of few layer MoS2 with hBN preserves the material's electronic properties but ma
Externí odkaz:
http://arxiv.org/abs/2101.06194
Autor:
Tang, J., Wei, M. T., Sharma, A., Arnault, E. G., Seredinski, A., Mehta, Y., Watanabe, K., Taniguchi, T., Amet, F., Borzenets, I.
We investigate the zero-bias behavior of Josephson junctions made of encapsulated graphene boron nitride heterostructures in the long ballistic junction regime. For temperatures down to 2.7K, the junctions appear non-hysteretic with respect to the sw
Externí odkaz:
http://arxiv.org/abs/2011.04142
Autor:
Larson, T. F. Q., Zhao, L., Arnault, E. G., Wei, M. T., Seredinski, A., Li, H., Watanabe, K., Taniguchi, T., Amet, F., Finkelstein, G.
Publikováno v:
Nano Letters (2020)
The AC Josephson effect manifests itself in the form of "Shapiro steps" of quantized voltage in Josephson junctions subject to RF radiation. This effect presents an early example of a driven-dissipative quantum phenomenon and is presently utilized in
Externí odkaz:
http://arxiv.org/abs/2003.08369
Autor:
Draelos, A. W., Silverman, A., Eniwaye, B., Arnault, E. G., Ke, C. T., Wei, M. T., Vlassiouk, I., Borzenets, I. V., Amet, F., Finkelstein, G.
Publikováno v:
Phys. Rev. B 99, 125427 (2019)
In this work, we report on hot carrier diffusion in graphene across large enough length scales that the carriers are not thermalized across the crystal. The carriers are injected into graphene at one site and their thermal transport is studied as a f
Externí odkaz:
http://arxiv.org/abs/1812.11711
Akademický článek
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