Development of Low-Resistance Ohmic Contacts with Bilayer NiO/Al-Doped ZnO Thin Films to p-type GaN

Autor: Taoufik Slimani Tlemcani, Clément Mauduit, Micka Bah, Meiling Zhang, Matthew Charles, Romain Gwoziecki, Arnaud Yvon, Daniel Alquier

Publikováno v: ACS Applied Materials & Interfaces
ACS Applied Materials & Interfaces, 2023, 15 (6), pp.8723-8729. ⟨10.1021/acsami.2c21106⟩

International audience; The fabrication of low-resistance and thermally stable Ohmic contacts is essential for the realization of reliable GaN power devices. In the particular case of p-type GaN, a thin Ni/Au bilayer is commonly used for Ohmic contac

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7609523f38c99793e53bf061a4d442d0
https://hal.science/hal-04052512

Investigation of Current Collapse Mechanism on AlGaN/GaN Power Diodes

Autor: Martin Doublet, Nicolas Defrance, Etienne Okada, Loris Pace, Thierry Duquesne, Bouyssou Emilien, Arnaud Yvon, Nadir Idir, Jean-Claude De Jaeger

Publikováno v: Electronics; Volume 12; Issue 9; Pages: 2007
Electronics
Electronics, 2023, 12 (9), pp.2007. ⟨10.3390/electronics12092007⟩

International audience; In this paper, a methodology is proposed for studying the current collapse effects of Gallium Nitride (GaN) power diodes and the consequences on the dynamic on-resistance (RON). Indeed, the growing interest of GaN based, high

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::04121270e8b921a41a51eaf4dbcde4e6
https://doi.org/10.3390/electronics12092007

A simple non-recessed and Au-free high quality Ohmic contacts on AlGaN/GaN: The case of Ti/Al alloy

Autor: Wahid Khalfaoui, Frédéric Cayrel, Emmanuel Collard, Maher Nafouti, Daniel Alquier, Georgio El-zammar, Arnaud Yvon

Publikováno v: Materials Science in Semiconductor Processing
Materials Science in Semiconductor Processing, Elsevier, 2018, 78, pp.107-110. ⟨10.1016/j.mssp.2017.11.021⟩

In this work, non-recessed and Au-free low resistance Ohmic contacts are investigated on AlGaN/GaN on silicon. Based on Ti/Al bilayers, Circular TLM are fabricated and contact values are extracted varying different parameters such as single and combi

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ab68a59218d5c51f6385b148bbbcc3f4
https://doi.org/10.1016/j.mssp.2017.11.021

Two-dimensional dopant profiling of gallium nitride p–n junctions by scanning capacitance microscopy

Autor: Emmanuel Collard, M. Lamhamdi, Arnaud Yvon, Daniel Alquier, Eric Frayssinet, Yvon Cordier, Anne Elisabeth Bazin, Frédéric Cayrel

Publikováno v: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 372:67-71

Two-dimensional imaging of dopant profiles for n and p-type regions are relevant for the development of new power semiconductors, especially for gallium nitride (GaN) for which classical profiling techniques are not adapted. This is a challenging tas

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::54a2aef96d8636ffbf942b4aeb6d58ff
https://doi.org/10.1016/j.nimb.2016.01.013

Si+ Implantation and Activation in GaN Comparison of GaN on Sapphire and GaN on Silicon

Autor: Emmanuel Collard, Mohamed Lamhamdi, Arnaud Yvon, Jean Christophe Houdbert, Frédéric Cayrel, Daniel Alquier, Anne Elisabeth Bazin

Publikováno v: Materials Science Forum. 711:213-217

In this paper, we evaluated gallium nitride heteroepitaxially grown on sapphire (GaN/Sa) and grown on silicon (GaN/Si) faced to implantation doping. Si+ was implanted on low doped n-type epilayers in order to create a plateau around 1020at.cm-3. All

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::b6e38c512981fe278dc3905dd7e9b604
https://doi.org/10.4028/www.scientific.net/msf.711.213