A GaN-HEMT Compact Model Including Dynamic RDSon Effect for Power Electronics Converters

Autor: Ke Li, Paul Leonard Evans, Christopher Mark Johnson, Arnaud Videt, Nadir Idir

Publikováno v: Energies, Vol 14, Iss 8, p 2092 (2021)

In order to model GaN-HEMT switching transients and determine power losses, a compact model including dynamic RDSon effect is proposed herein. The model includes mathematical equations to represent device static and capacitance-voltage characteristic

Externí odkaz: https://doaj.org/article/f75cdb1ff6b34bf4a52055e622fecad1

Design Method of PCB Inductors for High-Frequency GaN Converters

Autor: Nadir Idir, Ammar Chafi, Arnaud Videt, Hassan Maher

Publikováno v: IEEE Transactions on Power Electronics
IEEE Transactions on Power Electronics, Institute of Electrical and Electronics Engineers, 2021, 36 (1), pp.805-814. ⟨10.1109/TPEL.2020.3000438⟩
IEEE Transactions on Power Electronics, 2020, 36 (1), pp.805-814. ⟨10.1109/TPEL.2020.3000438⟩

International audience; The new power Gallium Nitride transistors allow to increase the operating frequency of converters to megahertz range, thanks to their low switching time that is of a few nanoseconds or less. This permits to reduce the values a

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5fc2bfd13c4315418a6b7cf4113d6844
https://doi.org/10.1109/tpel.2020.3000438

Design of an integrated GaN inverter into a multiphase PMSM

Autor: Arnaud Videt, Stephane Vienot, Bilel Zaidi, Nadir Idir, Florentin Salomez, Eric Semail, Thierry Duquesne, Hugot Pichon

Publikováno v: 2020 IEEE Vehicle Power and Propulsion Conference (VPPC).

The embedded energy conversion systems onboard vehicles impose strong constraints on power density (low weight and volume) and robustness. Several solutions can be used to achieve these objectives which consist in acting either on the design of the s

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::3bd74d6252dcbeefe785b6268068d755
https://doi.org/10.1109/vppc49601.2020.9330956

Electrothermal Modeling of GaN Power Transistor for High Frequency Power Converter Design

Autor: Nadir Idir, Nicolas Defrance, Loris Pace, Jean-Claude De Jaeger, Florian Chevalier, Arnaud Videt

Publikováno v: 22nd European Conference on Power Electronics and Applications (EPE ECCE Europe 2020)
22nd European Conference on Power Electronics and Applications (EPE ECCE Europe)
22nd European Conference on Power Electronics and Applications (EPE ECCE Europe), Sep 2020, Lyon, France. pp.1-10, ⟨10.23919/EPE20ECCEEurope43536.2020.9215782⟩

International audience; This work proposes the electrothermal modeling of a packaged GaN power transistor in order to evaluate by simulation its performances in a 200 W - 1 MHz DC/DC converter. The complete electrical modeling of the high frequency c

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::719bd89e680c8e7e37d335e1468f482f
https://doi.org/10.23919/epe20ecceeurope43536.2020.9215782

Analysis of GaN Converter Circuit Stability Influenced by Current Collapse Effect

Autor: Ke Li, Paul Evans, Mark Johnson, Arnaud Videt, Nadir Idir

Publikováno v: 2020 IEEE Applied Power Electronics Conference and Exposition (APEC).

GaN transistors allow to design highly efficient and high power density converters due to their low conduction and switching losses. However, their very fast switching and low gate threshold voltage make them prone to gate instability issues. Further

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::9a78eec0991b4f439316a65d419d4a4d
https://doi.org/10.1109/apec39645.2020.9124351