Zobrazeno 1 - 10
of 16
pro vyhledávání: '"Arnaud Tournier"'
Publikováno v:
Sensors, Vol 9, Iss 1, Pp 131-147 (2009)
We present a single-transistor pixel for CMOS image sensors (CIS). It is a floating-body MOSFET structure, which is used as photo-sensing device and source-follower transistor, and can be controlled to store and evacuate charges. Our investigation in
Externí odkaz:
https://doaj.org/article/3f22214090434d139073cfe5549331df
Autor:
Marios Barlas, Axel Crocherie, Felix Bardonnet, Quentin Abadie, Elodie Sungauer, Matteo Vignetti, Bastien Mamdy, Isobel Nicholson, Patrick Gros d'Aillon, Raul-Andres Bianchi, Gabriel Mugny, Dominique Golanski, Florian Domengie, Pascal Besson, Emilie Prevost, Linda Parmigiani, Jihane Arnaud, Helene Wehbe-Alause, Arnaud Tournier, Olivier Noblanc, Krysten Rochereau
Publikováno v:
Integrated Optics: Devices, Materials, and Technologies XXVI.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6e648b22f5db2c3e6f429e7f1b0cce62
https://doi.org/10.1117/12.2609360
https://doi.org/10.1117/12.2609360
Autor:
Christopher Townsend, G. Mugny, Matteo Vignetti, Arnaud Tournier, Jeremie Teyssier, Jean-Raphael Bezal, Raoul Vergara, Pascal Fonteneau, Kevin Channon, Arnaud Authie, Thomas Bouchet, Joao Miguel Melo Santos, Francois Agut, Frederic Lalanne, Bruce Rae, Damien Miclo, Yann Desprez, Pascal Mellot, Laurent Simony, Sara Pellegrini, David Hadden, Stephane Drouard, Franck Hingant, Vincent Farys, Francois Roy, Gregory Bochet, Blandine Roig, Thibault Augey, Cedric Tubert, Celine Mas, Aurelien Mazard, Boris Rodrigues Goncalves
Publikováno v:
ESSCIRC
This paper describes a 4.3e- RMS low noise 4.6µm Time-of-Flight pixel based on charge domain with kTC noise removal designed to enhance depth camera image quality. The pixel takes advantage of 6µm gradually doped epitaxial layer for 88.5% demodulat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8d1e7cd323dfdcf719918b36e47704f9
https://doi.org/10.1109/esscirc53450.2021.9567878
https://doi.org/10.1109/esscirc53450.2021.9567878
Autor:
Cedric Tubert, Pascal Mellot, Yann Desprez, Celine Mas, Arnaud Authie, Laurent Simony, Gregory Bochet, Stephane Drouard, Jeremie Teyssier, Damien Miclo, Jean-Raphael Bezal, Thibault Augey, Franck Hingant, Thomas Bouchet, Blandine Roig, Aurelien Mazard, Raoul Vergara, Gabriel Mugny, Arnaud Tournier, Frederic Lalanne, Francois Roy, Boris Rodrigues Goncalves, Matteo Vignetti, Pascal Fonteneau, Vincent Farys, Francois Agut, Joao Miguel Melo Santos, David Hadden, Kevin Channon, Christopher Townsend, Bruce Rae, Sara Pellegrini
Publikováno v:
ESSDERC 2021 - IEEE 51st European Solid-State Device Research Conference (ESSDERC).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::61a0f65921fbd5925d94feb4f797b7d5
https://doi.org/10.1109/essderc53440.2021.9631791
https://doi.org/10.1109/essderc53440.2021.9631791
Autor:
Frederic Lalanne, Arnaud Tournier, Yvon Cazaux, Pierre Malinge, N. Roux, M. Mcdonald, F. Roy, G. Monnot
Publikováno v:
2018 IEEE International Electron Devices Meeting (IEDM).
We developed a High Dynamic Range (HDR) Global Shutter (GS) pixel for automotive applications working in the charge domain with dual high-density storage node using Capacitive Deep Trench Isolation (CDTI). With a pixel size of $3.2\mu \mathrm{m}$ , t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8900776c2295bca8b98775de154b30f1
https://doi.org/10.1109/iedm.2018.8614615
https://doi.org/10.1109/iedm.2018.8614615
Autor:
Arnaud Tournier, L. Pinzelli, Francois Roy, D. Jeanjean, S. Hulot, F. Blanchet, Laurent Favennec, Didier Herault, C. Perrot, Francois Leverd, J.-P. Carrere, Helene Wehbe-Alause, S. Ricq, N. Cherault, P. Boulenc, C. Augier, Maxime Gatefait
Publikováno v:
physica status solidi c. 11:50-56
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4ccb5297020f5ce92bdc127d234e5ce2
https://doi.org/10.1002/pssc.201300378
https://doi.org/10.1002/pssc.201300378
Autor:
Arnaud Tournier
Publikováno v:
Annuaire français de droit international. 58:205-221
The judgment delivered by the International Court of Justice on 19 June 2012 in the case concerning Ahmadou Sadio Diallo (Republic of Guinea v. Democratic Republic of the Congo) (compensation owed by the Democratic Republic of the Congo to the Republ
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8b4b05bf62772bd1e1f223964e89fc40
https://doi.org/10.3406/afdi.2012.4677
https://doi.org/10.3406/afdi.2012.4677
Autor:
F. Roy, C. Richard, Jean-Pierre Oddou, C. Jenny, Daniel Benoit, J.-P. Carrere, Arnaud Tournier, S. Place, C. Aumont, M. Gatefait
Publikováno v:
Solid-State Electronics. :51-56
A new plasma induced damage mechanism on CMOS image sensor is analyzed. An increase of the mean pixel dark current is observed after the plasma etch of a cavity on the pixel area. The degradation increases non-linearly when the dielectric layers betw
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1a1f7f77aec275ce312902587fd743fa
https://doi.org/10.1016/j.sse.2011.06.037
https://doi.org/10.1016/j.sse.2011.06.037
Publikováno v:
Sensors, Vol 9, Iss 1, Pp 131-147 (2009)
Sensors (Basel, Switzerland)
Sensors
Volume 9
Issue 1
Pages 131-147
Sensors (Basel, Switzerland)
Sensors
Volume 9
Issue 1
Pages 131-147
We present a single-transistor pixel for CMOS image sensors (CIS). It is a floating-body MOSFET structure, which is used as photo-sensing device and source-follower transistor, and can be controlled to store and evacuate charges. Our investigation in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4d57cbb39294c93392ca54799913c9b2
http://www.mdpi.com/1424-8220/9/1/131/
http://www.mdpi.com/1424-8220/9/1/131/
Autor:
F. Roy, Nayera Ahmed, C. Perrot, Bastien Mamdy, G-N. Lu, B. Orlando, D. Pellissier-Tanon, Francois Leverd, Arnaud Tournier, Maurice Rivoire, J.-P. Carrere, N. Virollet, A. Seignard
Publikováno v:
2014 IEEE International Electron Devices Meeting.
This paper proposes the integration of MOS Capacitor Deep Trench Isolation (CDTI) as a solution to boost image sensors' pixels performances. We have investigated CDTI and compared it to oxide-filled Deep Trench Isolation (DTI) configurations, on sili
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f2790f983320d9bb942740b2881a4975
https://doi.org/10.1109/iedm.2014.7046979
https://doi.org/10.1109/iedm.2014.7046979