Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Arnaud Rigny"'
Publikováno v:
2018 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA).
Silicon Photonics is a unique platform for optical component integration that will provide high-data rate and cost-effective solutions for data center interconnections of 40 Gbps and beyond. High data rates and low levels of optical losses are key in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d9388b69b6d053093f17f4669bc70511
https://doi.org/10.1109/vlsi-tsa.2018.8403833
https://doi.org/10.1109/vlsi-tsa.2018.8403833
Autor:
Thierry Billon, Laurent Clavelier, Olivier Faynot, M. Piccin, Jéro^me Dechamp, Thomas Signamarcheix, Fabrice Lallement, Arnaud Rigny, Jean-Francois Damlencourt, Chrystel Deguet, Sorin Cristoloveanu, Marie-Anne Jaud, Alexandra Abbadie, Konstantin Bourdelle, Michel Pellat, K. Romanjek, Loic Sanchez, Cécile Maurois, A. Pouydebasque, Fabien Boulanger, Nicolas Daval, Perrine Batude, Cyrille Le Royer, Claude Tabone, Aurélie Tauzin, Eric Guiot, Charlotte Drazek, Frédéric Mazen, Emmanuel Augendre, P. Scheiblin, Bruno Ghyselen, Jean-Michel Hartmann, William Van Den Daele, Maud Vinet, Marc Zussy, Lamine Benaissa, Nicolas Blanc
Publikováno v:
ECS Transactions. 25:351-362
SOITEC, Parc Technologique des Fontaines, F38190, Bernin, France The recent progress in the fabrication of GeOI substrates and devices is reviewed. Improvements have been made in threading dislocation density, Ge-buried oxide interface passivation, d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3185bda807608d17f62d2d6fb7791798
https://doi.org/10.1149/1.3203972
https://doi.org/10.1149/1.3203972
Autor:
Arnaud Rigny
Publikováno v:
Annales Des Télécommunications. 58:1307-1341
In the ten past years, the telecommunication industry has experienced an unprecedented growth rate. To follow the exponential Bandwidth demand, new transmission technologies have emerged. Amongst them, we find Wavelength Division Multiplexing (WDM) t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::90ae3cf283ffa4a152c32bc02d8a698d
https://doi.org/10.1007/bf03001733
https://doi.org/10.1007/bf03001733
Autor:
Shankar Kumar Selvaraja, Arnaud Rigny, Joris Van Campenhout, Patrick Ong, Gustaf Winroth, Philippe Absil, Wim Bogaerts, Konstantin Bourdelle, Celine Cailler, Dries Van Thourhout, Guy Lepage, Peter De Heyn
Publikováno v:
2014 OPTICAL FIBER COMMUNICATIONS CONFERENCE AND EXHIBITION (OFC)
OFC
OFC
Using an advanced 300mm CMOS-platform, we report record-low and highly-uniform propagation loss: 0.45 +/- 0.12dB/cm for wires, and 2dB/cm for slot waveguides. For WDM devices, we demonstrate channel variation(3-sigma) within-wafer and within-device o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8959e67a6993fb8051399e9ac813997b
https://biblio.ugent.be/publication/5837163/file/5837168
https://biblio.ugent.be/publication/5837163/file/5837168
Autor:
Thomas Signamarcheix, Laurent Clavelier, Cyrille Le Royer, T. Billon, S. Lagrasta, Carl Quaeyhaegens, D. Bensahel, B. Depuydt, N. Kernevez, Jean-Francois Damlencourt, Yves Morand, Claude Tabone, Olivier Kermarrec, Y. Campidelli, Arnaud Rigny, S. Descombes, Jean-Michel Hartmann, Simon Deleonibus, Nikolay Cherkashin, Antoon Theuwis, Benjamin Vincent, Chrystel Deguet, T. Akastu, P. Rivallin, L. Sanchez
Publikováno v:
Workshop on Germanium for CMOS
Workshop on Germanium for CMOS, Nov 2006, ville indéterminée, Unknown Region. pp.789-805, ⟨10.1149/1.2355874⟩
Workshop on Germanium for CMOS, Nov 2006, ville indéterminée, Unknown Region. pp.789-805, ⟨10.1149/1.2355874⟩
The challenges posed by the scaling of Silicon (Si) devices make mandatory the study of new materials to overcome the physical limitations of the Si. Germanium (Ge) was actually used in the first transistors but was then abandoned in favour of Si due
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c4581ac3f93125f1c1d7538e5f880620
https://hal.science/hal-01736072
https://hal.science/hal-01736072
Autor:
Emmanuel Augendre, Loïc Sanchez, Lamine Benaissa, Thomas Signamarcheix, Jean-Michel Hartmann, Cyrille Le Royer, Maud Vinet, William Van Den Daele, Jean-François Damlencourt, Perrine Batude, Claude Tabone, Frédéric Mazen, Aurélie Tauzin, Nicolas Blanc, Michel Pellat, Jérôme Dechamp, Marc Zussy, Pascal Scheiblin, Marie-Anne Jaud, Charlotte Drazek, Cécile Maurois, Matteo Piccin, Alexandra Abbadie, Fabrice Lallement, Nicolas Daval, Eric Guiot, Arnaud Rigny, Bruno Ghyselen, Konstantin Bourdelle, Fabien Boulanger, Sorin Cristoloveanu, Thierry Billon, Olivier Faynot, Chrystel Deguet, Laurent Clavelier
Publikováno v:
ECS Meeting Abstracts. :2387-2387
not Available.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d61f4ab06a6681548d4e12e7177994c7
https://doi.org/10.1149/ma2009-02/31/2387
https://doi.org/10.1149/ma2009-02/31/2387
Autor:
Jerome Dechamp, Arnaud Rigny, Makoto Yoshimi, Aurélie Tauzin, J.S. Moulet, M. Zussy, Takeshi Akatsu, F. Madeira, Chrystel Deguet, Frédéric Mazen, Laurent Clavelier, C. Richtarch
Publikováno v:
Electronics Letters. 44:822
The Smart CutTM technology has been used for LiTaO3 layer transfer. A 3-inch full wafer single-crystal LiTaO3 layer onto a carrier wafer comprising a metallic electrode is reported.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::138f2f4e0de188f7706e4638fef14cc3
https://doi.org/10.1049/el:20081057
https://doi.org/10.1049/el:20081057