Výsledky vyhledávání - "Arnaud Lepert"

Advances in optically pumped semiconductor lasers for blue emission under frequency doubling

Autor: Arnaud Lepert, John P. Charles, Yanbo Bai, Christian Scholz, Eli Weiss, Patrick Hyland, Juan Chilla, Jeffrey Wisdom, Zuntu Xu, Yong Lin

Publikováno v: Vertical External Cavity Surface Emitting Lasers (VECSELs) VI.

Optically pumped semiconductor lasers (OPSL) offer the advantage of excellent beam quality, wavelength agility, and high power scaling capability. In this talk we will present our recent progress of high-power, 920nm OPSLs frequency doubled to 460nm

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::fb6a41e5d4abede85728d6517f88e42f
https://doi.org/10.1117/12.2220045

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Flow Cytometry: OPSL Technology Meets Critical Needs

Autor: Arnaud Lepert, Matthias Schulze

Publikováno v: Optik & Photonik. 4:29-32

Flow cytometry is a widely used tool for counting and/or sorting cells in both clinical and research medical applications, as well as animal husbandry and testing of genetically modified organisms. One important cytometry trend is the use of more las

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::b8b649b03f5570f89e05759a98a846f9
https://doi.org/10.1002/opph.201190058

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Dopants (P, As, and B) in the Polycrystalline Silicon/Titanium Silicide System: Redistribution and Activation

Autor: Arnaud Lepert, Alex Kalnitsky, Paul K. Hurley

Publikováno v: Scopus-Elsevier

In this work we report, for the first time, a comparative experimental study of dopant loss from heavily doped polycrystalline silicon (polysilicon) into overlying titanium silicide due to postsilicidation heat-treatments. The experimental study exam

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7b6b1b52a87761fd05b9937cd3de358e
https://doi.org/10.1149/1.1837537

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Towards a practical sodium guide star laser source: design for < 50 watt LGS based on OPSL

Autor: Juan L. A. Chilla, Jill D. Berger, J. F. P. van Nunen, Arnaud Lepert, Sergei V. Govorkov

Publikováno v: SPIE Proceedings.

We present laser results of OPS structures based on highly strained InGaAs quantum wells emitting at 1178nm and frequency doubled to produce high power, high beam quality laser radiation at 589nm. The laser architecture is the same as in our commerci

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::f89f2fe861f245808565c368bc111aad
https://doi.org/10.1117/12.927846

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Impact of the polysilicon doping level on the properties of the silicon/oxide interface in polysilicon/oxide/silicon capacitor structures

Autor: M. Venkatesan, C. Leveugle, S. Moran, Arnaud Lepert, Alex Kalnitsky, Paul K. Hurley, Alan Mathewson, Israel Beinglass, E. Sheehan

Publikováno v: Scopus-Elsevier

In this work, new observations noted in the capacitance-voltage (CV) behaviour of polysilicon/oxide/silicon capacitor structures are reported. As the doping concentration in the polysilicon layer is reduced, anomalous CV characteristics are observed,

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::69f558c268a38af38956f2ed38a65558
http://www.scopus.com/inward/record.url?eid=2-s2.0-0031150255&partnerID=MN8TOARS