Zobrazeno 1 - 10
of 5 823
pro vyhledávání: '"Arnaud , F."'
Autor:
Bohuslavskyi, H., Barraud, S., Cassé, M., Barral, V., Bertrand, B., Hutin, L., Arnaud, F., Galy, P., Sanquer, M., De Franceschi, S., Vinet, M.
Publikováno v:
2017 Silicon Nanoelectronics Workshop (SNW), Kyoto, 2017, pp. 143-144
This paper reports the first cryogenic characterization of 28nm Fully-Depleted-SOI CMOS technology. A comprehensive study of digital/analog performances and body-biasing from room to the liquid helium temperature is presented. Despite a cryogenic ope
Externí odkaz:
http://arxiv.org/abs/2002.07070
Akademický článek
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Publikováno v:
In Microelectronics Reliability September 2023 148
Autor:
Bohuslavskyi, H., Barraud, S., Barral, V., Cassé, M., Guevel, L. Le, Hutin, L., Bertrand, B., Crippa, A., Jehl, X., Pillonnet, G., Jansen, A. G. M., Arnaud, F., Galy, P., Maurand, R., De Franceschi, S., Sanquer, M., Vinet, M.
Publikováno v:
IEEE Transactions on Electron Devices ( Volume: 65 , Issue: 9 , Sept. 2018 )
Extensive electrical characterization of ring oscillators (ROs) made in high-$\kappa$ metal gate 28nm Fully-Depleted Silicon-on- Insulator (FD-SOI) technology is presented for a set of temperatures between 296 and 4.3K. First, delay per stage ($\tau_
Externí odkaz:
http://arxiv.org/abs/1903.06021
Autor:
Bohuslavskyi, H., Jansen, A. G. M., Barraud, S., Barral, V., Cassé, M., Guevel, L. Le, Jehl, X., Hutin, L., Bertrand, B., Billiot, G., Pillonnet, G., Arnaud, F., Galy, P., De Franceschi, S., Vinet, M., Sanquer, M.
Publikováno v:
IEEE Electron Device Letters, 5 March 2019
In the standard MOSFET description of the drain current $I_{D}$ as a function of applied gate voltage $V_{GS}$, the subthreshold swing $SS(T)\equiv dV_{GS}/d\log I_{D}$ has a fundamental lower limit as a function of temperature $T$ given by $SS(T) =
Externí odkaz:
http://arxiv.org/abs/1903.05409
Autor:
Confort MP; IVPC UMR754, INRAE, Universite Claude Bernard Lyon 1, EPHE, PSL Research University, LYON, France., Ratinier M; IVPC UMR754, INRAE, Universite Claude Bernard Lyon 1, EPHE, PSL Research University, LYON, France., Arnaud F; IVPC UMR754, INRAE, Universite Claude Bernard Lyon 1, EPHE, PSL Research University, LYON, France. frederick.arnaud@univ-lyon1.fr.
Publikováno v:
Methods in molecular biology (Clifton, N.J.) [Methods Mol Biol] 2024; Vol. 2824, pp. 81-89.
Autor:
Schwartz, Christopher J., Brogi, Edi, Marra, Antonio, Da Cruz Paula, Arnaud F, Nanjangud, Gouri J., da Silva, Edaise M., Patil, Sujata, Shah, Shreena, Ventura, Katia, Razavi, Pedram, Norton, Larry, D'alfonso, Timothy, Weigelt, Britta, Pareja, Fresia, Reis-Filho, Jorge S., Wen, Hannah Y.
Publikováno v:
In Modern Pathology February 2022 35(2):193-201
Autor:
Nicole I. Farber, Yimin Li, Roberto N. Solis, Joy Chen, Zahrah Masheeb, Machelle Wilson, Arnaud F. Bewley, Marianne Abouyared, Shyam Rao, Yi Rong, Andrew C. Birkeland
Publikováno v:
Cancers, Vol 15, Iss 15, p 3865 (2023)
Though specific growth rate (SGR) has potential prognostic value for oropharyngeal squamous cell carcinoma (OPSCC), there is sparse literature defining these rates. Our aims were to establish the SGRs of primary tumors (PTs) and lymph nodes (LNs) in
Externí odkaz:
https://doaj.org/article/e1327c7731e544cb93223c5fc7251b6a
Publikováno v:
In Microelectronic Engineering 1 May 2021 244-246
Autor:
Biguenet, M., Sabatier, P., Chaumillon, E., Chagué, C., Arnaud, F., Jorissen, F., Coulombier, T., Geba, E., Cordrie, L., Vacher, P., Develle, A.L., Chalmin, E., Soufi, F., Feuillet, N.
Publikováno v:
In Sedimentary Geology February 2021 412