Zobrazeno 1 - 10
of 13
pro vyhledávání: '"Arnab K, Majee"'
Publikováno v:
Journal of Computational Electronics. 20:2-12
While two-dimensional (2D) materials have emerged as a new platform for nanoelectronic devices with improved electronic, optical, and thermal properties, and their heightened sensitivity to electrostatic and mechanical interactions with their environ
Publikováno v:
ACS Applied Materials & Interfaces. 12:14323-14330
Few-layer (FL) transition metal dichalcogenides have drawn attention for nanoelectronics applications due to their improved mobility, owing to the partial screening of charged impurities at the oxi...
Publikováno v:
ACS applied materialsinterfaces. 12(12)
Few-layer (FL) transition-metal dichalcogenides have drawn attention for nanoelectronics applications due to their improved mobility, owing to the partial screening of charged impurities at the oxide interface. However, under realistic operating cond
Autor:
Zahra Hemmat, Arnab K. Majee, Zlatan Aksamija, Poya Yasaei, Cameron J. Foss, Amirhossein Behranginia, Amin Salehi-Khojin
Publikováno v:
ACS Applied Materials & Interfaces. 10:24892-24898
The ongoing shrinkage in the size of two-dimensional (2D) electronic circuitry results in high power densities during device operation, which could cause a significant temperature rise within 2D channels. One challenge in Raman thermometry of 2D mate
Publikováno v:
Scientific Reports, Vol 7, Iss 1, Pp 1-13 (2017)
Scientific Reports
Scientific Reports
We study the impact of grain boundaries (GB) and misorientation angles between grains on electronic transport in 2-dimensional materials. Here we have developed a numerical model based on the first-principles electronic bandstructure calculations in
Autor:
Arnab K. Majee, Zlatan Aksamija
Publikováno v:
Nano Express. 2:030007
Owing to its superlative carrier mobility and atomic thinness, graphene exhibits great promise for interconnects in future nanoelectronic integrated circuits. Chemical vapor deposition (CVD), the most popular method for wafer-scale growth of graphene
Autor:
Arnab K. Majee, Zlatan Aksamija
Publikováno v:
Physical Review B. 98
The steady-state behavior of thermal transport in bulk and nanostructured semiconductors has been widely studied, both theoretically and experimentally. On the other hand, fast transients and frequency dynamics of thermal conduction has been given le
Autor:
Amirhossein, Behranginia, Zahra, Hemmat, Arnab K, Majee, Cameron J, Foss, Poya, Yasaei, Zlatan, Aksamija, Amin, Salehi-Khojin
Publikováno v:
ACS applied materialsinterfaces. 10(29)
The ongoing shrinkage in the size of two-dimensional (2D) electronic circuitry results in high power densities during device operation, which could cause a significant temperature rise within 2D channels. One challenge in Raman thermometry of 2D mate
Autor:
Arnab K. Majee, Zlatan Aksamija
Publikováno v:
2017 IEEE 17th International Conference on Nanotechnology (IEEE-NANO).
The steady-state behavior of thermal transport in bulk and nanostructured semiconductors has been widely studied, both theoretically [4] and experimentally [1], with an intense focus on 2-dimensional materials such as graphene and graphene nanoribbon
Autor:
Amirhossein, Behranginia, Poya, Yasaei, Arnab K, Majee, Vinod K, Sangwan, Fei, Long, Cameron J, Foss, Tara, Foroozan, Shadi, Fuladi, Mohammad Reza, Hantehzadeh, Reza, Shahbazian-Yassar, Mark C, Hersam, Zlatan, Aksamija, Amin, Salehi-Khojin
Publikováno v:
Small (Weinheim an der Bergstrasse, Germany). 13(30)
Reliable fabrication of lateral interfaces between conducting and semiconducting 2D materials is considered a major technological advancement for the next generation of highly packed all-2D electronic circuitry. This study employs seed-free consecuti