Zobrazeno 1 - 10
of 23
pro vyhledávání: '"Armin Moser"'
Autor:
Fangrong Zhang, Gesa Richter, Benjamin Bourgeois, Emil Spreitzer, Armin Moser, Andreas Keilbach, Petra Kotnik, Tobias Madl
Publikováno v:
Pharmaceutics, Vol 14, Iss 1, p 69 (2021)
A fundamental step in developing a protein drug is the selection of a stable storage formulation that ensures efficacy of the drug and inhibits physiochemical degradation or aggregation. Here, we designed and evaluated a general workflow for screenin
Externí odkaz:
https://doaj.org/article/9239d8562f6f49609c110c7629a31816
Autor:
Madl, Fangrong Zhang, Gesa Richter, Benjamin Bourgeois, Emil Spreitzer, Armin Moser, Andreas Keilbach, Petra Kotnik, Tobias
Publikováno v:
Pharmaceutics; Volume 14; Issue 1; Pages: 69
A fundamental step in developing a protein drug is the selection of a stable storage formulation that ensures efficacy of the drug and inhibits physiochemical degradation or aggregation. Here, we designed and evaluated a general workflow for screenin
Autor:
J. Ivanco, Sergiu Pop, Heinz-Georg Flesch, Ingo Salzmann, Alfred Neuhold, Dietrich R. T. Zahn, Martin Oehzelt, Teodor Toader, Roland Resel, Detlef-Matthias Smilgies, Armin Moser
Publikováno v:
Chemical Physics Letters. 574:51-55
This Letter reports the impact of the evaporation rate on the crystallographic phase formation of vacuum deposited α-sexithiophene thin films studied by X-ray diffraction methods. The experiments reveal the formation of two crystal phases, one of wh
Autor:
Fatemeh Gholamrezaie, Xiaoran Li, Cees van der Marel, G Gerwin Gelinck, Armin Moser, Dago M. de Leeuw, Alfred Neuhold, Andreas Ringk, Roland Resel, Peter Strohriegl, Ecp Edsger Smits
Publikováno v:
Advanced Functional Materials, 23(16), 2016-2023. WILEY-V C H VERLAG GMBH
Advanced Functional Materials, 16, 23, 2016-2023
Advanced Functional Materials, 23(16), 2016-2023. Wiley-VCH Verlag
Advanced Functional Materials, 16, 23, 2016-2023
Advanced Functional Materials, 23(16), 2016-2023. Wiley-VCH Verlag
This work describes n-type self-assembled monolayer field-effect transistors (SAMFETs) based on a perylene derivative which is covalently fixed to an aluminum oxide dielectric via a phosphonic acid linker. N-type SAMFETs spontaneously formed by a sin
Autor:
Armin Moser, Ulrich Pietsch, Tatjana Djuric, Jiri Novak, Linda Grodd, Souren Grigorian, Alfred Neuhold, Roland Resel, Heinz-Georg Flesch
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 284:64-68
Since modern synchrotrons with highly intense X-ray beams are in use to investigate organic materials, the stability of soft matter materials during beam exposure is a crucial issue. Grazing incidence X-ray diffraction and specular X-ray reflectivity
Autor:
Armin Moser, Oleg Konovalov, Gabin Gbabode, Oliver Werzer, Roland Resel, Jiri Novak, Nicolas Boucher, Johann P. de Silva, Michele Sferrazza, Yves Geerts
Publikováno v:
Langmuir. 28:8530-8536
Temperature dependent structural and morphological investigations on semiconducting dioctyl-terthiophene (DOTT) thin films prepared on silica surfaces reveals the coexistence of surface induce order and distinct crystalline/liquid crystalline bulk po
Autor:
Jan Jakabovic, Heinz-Georg Flesch, Matthias Edler, Simon J. Ausserlechner, Marco Marchl, Armin Moser, Roland Resel, Detlef-Matthias Smilgies, Thomas Griesser, Alfred Neuhold, Anja Haase
Publikováno v:
Synthetic Metals. 161:2598-2602
Thin films of pentacene have been deposited on five different organic dielectric layers of three different classes of organic materials: a conventional polymer, a photoreactive polymer and a self assembled monolayer. The morphology and crystallograph
Autor:
Roberto Lazzaroni, Yves Geerts, Pascal Viville, Nicolas Dumont, Gabin Gbabode, Florence Quist, Armin Moser, Guillaume Schweicher
Publikováno v:
Advanced Materials. 24:658-662
A new phase of a known discotic liquid crystal is observed at the interface with a rigid substrate. The structure of the substrate-induced phase has been characterized by atomic force microscopy, specular X-ray diffraction, and small-angle and wide-a
Autor:
Peter Puschnig, Jürgen P. Rabe, Martin Oehzelt, Norbert Koch, Ingo Salzmann, Dmitrii Nabok, Steffen Duhm, Georg Heimel, Claudia Ambrosch-Draxl, Armin Moser
Publikováno v:
Crystal Growth & Design. 11:600-606
Thin films of 6,13-pentacenequinone (PQ) on native silicon oxide (SiOx) grown in a yet unsolved surface-induced thin-film polymorph were investigated by X-ray diffraction reciprocal-space mapping yielding triclinic unit-cell parameters of a = 4.69 A,
Autor:
Nick A. J. M. van Aerle, Paul Heremans, Gerwin H. Gelinck, J. Bas P. H. van der Putten, Christoph Wilhelm Sele, Kris Myny, Armin Moser, Bjoern Niesen, Harry J. Wondergem, M J Thornton, Roland Resel, Albert J. J. M. van Breemen, B. K. Charlotte Kjellander, John E. Anthony
Publikováno v:
Advanced Materials, 21(48), 4926-4931. Wiley-VCH Verlag
(Figure Presented) Controlling the morphology of soluble small molecule organic semiconductors is crucial for the application of such materials in electronic devices. Using a simple dip-coating process we systematically vary the film drying speed to