Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Armin Liebchen"'
Autor:
Keith Gronlund, Douglas Van Den Broeke, J. Fung Chen, Stephen Hsu, Linda Yu, Jungchul Park, Sean Park, Armin Liebchen, Ting Chen
Publikováno v:
SPIE Proceedings.
We describe a new resist model calibration procedure and its implementation in LithoCruiser TM . In addition to the resist calibration, LithoCruiser is used to perform simultaneous optimization for numerical aperture (NA), mask OPC, and illumination
Autor:
Wieger Scheepers, Marco Van Dam, Denis A.M. Faas, Frank Nowak, Armin Liebchen, Robert John Socha, Eric Hendrickx, Andre Engelen
Publikováno v:
SPIE Proceedings.
Step&Scan systems are pushed towards low k1 applications. Contrast enhancement techniques are crucial for successful implementation of these applications in a production environment. A NA - sigma - illumination mode optimizer and a contrast-based opt
Autor:
Xuelong Shi, Sabita Roy, Ting Chen, Robert John Socha, J. Fung Chen, Stephen Hsu, Armin Liebchen, Douglas Van Den Broeke
Publikováno v:
SPIE Proceedings.
Under low-k 1 patterning constraints, it has been a challenge for the lithography process to meet the aggressive IC design rule requirements for the 90nm and the upcoming 65nm nodes. From the imaging perspective, we see the geometric design rules are
Publikováno v:
SPIE Proceedings.
CDU is probably one of the most important process control parameters for poly gate printing process. As the design rule has been shrunk to below 100nm node and k1 approaching 0.35, the required specifications for CDU are more stringently tightened. F
Publikováno v:
SPIE Proceedings.
We have developed an ultrafast lithographic 2D aerial image simulator named LithoCruiser TM . It employs a novel algorithm based on Hopkins imaging (Titanium model). Compared to currently available simulation tools, LithoCruiser has demonstrated an o
Autor:
Thomas Laidig, Kent H. Nakagawa, Armin Liebchen, Roger F. Caldwell, J. Fung Chen, Kurt E. Wampler
Publikováno v:
SPIE Proceedings.
An envisioned technology path to sub-0.1 micrometer process generations is first presented. OPC, PSM, and custom illumination apertures are all able to enhance the performance of the optical lithography. By integrating the use of these resolution enh
Autor:
Stephen Hsu, Armin Liebchen, Xuelong Shi, J. Fung Chen, Robert John Socha, Sabita Roy, Douglas Van Den Broeke, Ting Chen
Publikováno v:
Journal of Micro/Nanolithography, MEMS, and MOEMS. 4:023003
It has been a challenge for the lithography process to meet aggressive integrated circuit design rule requirements for 90 nm and upcoming 65 nm technology nodes under low-k1 patterning constraints. The geometric design rules are largely governed by n
Conference
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