Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Armin Haj Aboutalebi"'
Publikováno v:
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems. 38:2229-2242
As an important nonvolatile memory technology, spin transfer torque magnetoresistive RAM (STT-MRAM) is widely considered as a universal memory solution for future processors. Employing STT-MRAM as the main memory offers a wide variety of benefits, bu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::43958faa3c33c3d0c6995624dc9982ad
https://doi.org/10.1109/tcad.2018.2878166
https://doi.org/10.1109/tcad.2018.2878166
Autor:
Joo Hwan Lee, Tajana Rosing, Sahand Salamat, Yang Seok Ki, Armin Haj Aboutalebi, Behnam Khaleghi
Publikováno v:
FPGA
As the size of data generated every day grows dramatically, the computational bottleneck of computer systems has been shifted toward the storage devices. Thanks to recent developments in storage devices, the interface between the storage and the comp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6a4c887527597075f770ac826a9ce17b
https://doi.org/10.1145/3431920.3439298
https://doi.org/10.1145/3431920.3439298
Publikováno v:
IPCCC
Deep learning has recently shown extensive usage in a wide variety of applications. To accelerate deep learning in hardware, non-volatile memory (NVM) technologies have recently been used to perform neural network (NN) computation based upon their un
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e525d6d2325de8279695c077ab765996
https://doi.org/10.1109/pccc.2018.8711283
https://doi.org/10.1109/pccc.2018.8711283
Autor:
Mohamed Abdel-Basset, Laila Abdel-Fatah, Armin Haj Aboutalebi, A. Sherly Alphonse, Grace Mojisola Asogbon, Senthil Murugan Balakrishnan, Soumya Banerjee, S.S. Blessy Trencia Lincy, Arun Das, Prasun Das, Dejey Dharma, Lide Duan, Anna Bou Ezzeddine, Kaneez Fatima, Sakshi Kaushal, Aydin Kaya, Ali Seydi Keceli, Harish Kumar, Guanglin Li, Marek Lóderer, Mir Muhammad Lodro, Jaroslav Loebl, Róbert Magyar, Yacine Ouzrout, Shalini Parasuraman, Sandeep Pirbhulal, Paul Rad, Anitha Ramchandran, Viera Rozinajová, Sounak Sadhukhan, Oluwarotimi Williams Samuel, Arun Kumar Sangaiah, Aicha Sekhari, Megha Sharma, Chinu Singla, Ali Hassan Sodhro, Gul Hassan Sodhro, N. Suresh Kumar, Bedir Tekinerdogan, Huseyin Temucin, Alex D. Torres, Amandeep Verma, Petra Vrablecová, Hamdi Yalin Yalic, Hao Yan
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::999fa34d757381567e14d9c2eeeb3afd
https://doi.org/10.1016/b978-0-12-813314-9.00021-9
https://doi.org/10.1016/b978-0-12-813314-9.00021-9
Autor:
Armin Haj Aboutalebi, Lide Duan
Publikováno v:
ICCD
As an important non-volatile memory technology, STTMRAM is widely considered as a universal memory solution in current processors. Employing STT-MRAM as the main memory offers a wide variety of benefits, but also results in unique design challenges.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e099a3ceb2db751378ac4c9c5f21ebc1
https://doi.org/10.1109/iccd.2017.110
https://doi.org/10.1109/iccd.2017.110
Autor:
Armin Haj Aboutalebi, Lide Duan
Publikováno v:
CASES
As an important non-volatile memory technology, STT-MRAM is widely considered as a universal memory solution in current processors. Employing STT-MRAM as the main memory offers a wide variety of benefits, but also results in unique design challenges.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::babe88d7033a0f37a9c93d5954327cab
https://doi.org/10.1145/3125501.3125517
https://doi.org/10.1145/3125501.3125517