Zobrazeno 1 - 10 of 277 pro vyhledávání: '"Armin Dadgar"'
1
Akademický článek
Reliable GaN-Based THz Gunn Diodes With Side-Contact and Field-Plate Technologies
Autor: Ahid S. Hajo, Oktay Yilmazoglu, Armin Dadgar, Franko Kuppers, Thomas Kusserow
Publikováno v: IEEE Access, Vol 8, Pp 84116-84122 (2020)
For the first time, Gallium Nitride(GaN)-based Gunn diodes with side-contact and fieldplate technologies were fabricated and measured with reliable characteristics. A high negative differential resistance (NDR) region was characterised for the GaN Gu
Externí odkaz: https://doaj.org/article/cb654b59a7164382b4e85003529c8c0f
Zobrazit plný text záznamu
2
Akademický článek
Efficient synthesis, biological evaluation, and docking study of isatin based derivatives as caspase inhibitors
Autor: Loghman Firoozpour, Lixin Gao, Setareh Moghimi, Parvin Pasalar, Jamshid Davoodi, Ming-Wei Wang, Zahra Rezaei, Armin Dadgar, Hoda Yahyavi, Massoud Amanlou, Alireza Foroumadi
Publikováno v: Journal of Enzyme Inhibition and Medicinal Chemistry, Vol 35, Iss 1, Pp 1674-1684 (2020)
In this paper, a new series of isatin-sulphonamide based derivatives were designed, synthesised and evaluated as caspase inhibitors. The compounds containing 1-(pyrrolidinyl)sulphonyl and 2-(phenoxymethyl)pyrrolidin-1-yl)sulphonyl substitution at C5
Externí odkaz: https://doaj.org/article/19ec5e7518364f56b034dc21514ae3ab
Zobrazit plný text záznamu
5
Understanding High-Energy 75-MeV Sulfur-Ion Irradiation-Induced Degradation in GaN-Based Heterostructures: The Role of the GaN Channel Layer
Autor: Seshagiri Rao Challa, Christian Kristukat, M.E. Debray, André Strittmatter, Nahuel A. Mueller, Armin Dadgar, Hartmut Witte, Nahuel Vega
Publikováno v: IEEE Transactions on Electron Devices. 68:24-28
AlInN/GaN on Si high-electron mobility transistors (HEMTs) are irradiated with various fluences of 75-MeV sulfur ions to study the radiation-induced degradation mechanisms. Heavy-ion irradiation has been found to reduce saturation ON- and OFF-state c
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::9a6de23590acb304018b76a65fca8db3
https://doi.org/10.1109/ted.2020.3037259
Zobrazit plný text záznamu
6
Efficient synthesis, biological evaluation, and docking study of isatin based derivatives as caspase inhibitors
Autor: Setareh Moghimi, Jamshid Davoodi, Massoud Amanlou, Ming-Wei Wang, Loghman Firoozpour, Alireza Foroumadi, Hoda Yahyavi, Parvin Pasalar, Lixin Gao, Zahra Rezaei, Armin Dadgar
Publikováno v: Journal of Enzyme Inhibition and Medicinal Chemistry, Vol 35, Iss 1, Pp 1674-1684 (2020)
Journal of Enzyme Inhibition and Medicinal Chemistry
article-version (VoR) Version of Record
ABTRACT In this paper, a new series of isatin-sulphonamide based derivatives were designed, synthesised and evaluated as caspase inhibitors. The compounds containing 1-(pyrrolidinyl)sulphonyl and 2-(phenoxymethyl)pyrrolidin-1-yl)sulphonyl substitutio
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::eb12f529e97d6efcd6636a70668934ca
https://doi.org/10.1080/14756366.2020.1809388
Zobrazit plný text záznamu
7
Outstanding Reliability of Heavy-Ion-Irradiated AlInN/GaN on Silicon HFETs
Autor: Seshagiri Rao Challa, André Strittmatter, Hartmut Witte, Gordon Schmidt, Jürgen Christen, Nahuel Vega, Nahuel Muller, Armin Dadgar, M.E. Debray, Christian Kristukat, Romualdo A. Ferreyra
Publikováno v: IEEE Transactions on Nuclear Science. 66:2417-2421
AlInN/GaN heterostructure field-effect transistors (HFETs) grown on silicon withstand irradiation with 75-MeV sulfur ions up to fluences of $5.5 \times 10 ^{13}$ ions/cm2. The static transistor operation characteristics of the devices exhibit a shift
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::f659de8ba4492aafdc23b9415c62a025
https://doi.org/10.1109/tns.2019.2954216
Zobrazit plný text záznamu
8
Heavily Ge-doped GaN as transparent current spreading layer for blue tunnel junction light emitting diodes
Autor: Armin Dadgar, Christoph Berger, Silvio Neugebauer, André Strittmatter, Florian Hörich
Publikováno v: Journal of Applied Physics. 132:233103
We report on metalorganic vapor phase epitaxy of highly conductive germanium-doped GaN layers and their application for blue tunnel-junction light emitting diodes (TJ-LEDs). Using Ge as donor, carrier densities of up to 2 × 1020 cm−3 and low bulk
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::66d5e6433995bf17a40b346e289eccbd
https://doi.org/10.1063/5.0130757
Zobrazit plný text záznamu
9
Laser-assisted local metal–organic vapor phase epitaxy
Autor: Max Trippel, Jürgen Bläsing, Matthias Wieneke, Armin Dadgar, Gordon Schmidt, Frank Bertram, Jürgen Christen, André Strittmatter
Publikováno v: Review of Scientific Instruments. 93:113904
Selective area epitaxial growth is an important technique, both for monolithic device integration as well as for defect reduction in heteroepitaxy of crystalline materials on foreign substrates. While surface engineering with masking materials or by
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9436e9948d0083f9811a364bdd3ceb70
https://doi.org/10.1063/5.0092251
Zobrazit plný text záznamu
10
Novel concepts for III-N-based vertical cavity surface emitting lasers
Autor: Armin Dadgar
Publikováno v: 2021 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC).
Vertical cavity surface emitting lasers in the visible wavelength region are interesting for projection and display purposes as well as for scientific applications. Although VCSELs in the blue wavelength region were already demonstrated, they are not
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::9408c571acb51c53892c48a1979a3d9f
https://doi.org/10.1109/cleo/europe-eqec52157.2021.9542108
Zobrazit plný text záznamu

Vyhledávací nástroje:

Upřesnit hledání

Omezení vyhledávání
Plný text Recenzováno Digitální knihovna AV ČR
Zdroje