Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Armando S. Somintac"'
Autor:
Jessica P. C. Afalla, Alexander de los Reyes, Valynn Katrine Mag-usara, Lorenzo P. Lopez Jr., Kohji Yamamoto, Masahiko Tani, Armando S. Somintac, Arnel A. Salvador, Elmer S. Estacio
Publikováno v:
AIP Advances, Vol 7, Iss 12, Pp 125210-125210-8 (2017)
Simultaneous molecular beam epitaxial growth of GaAs/AlGaAs multiple quantum wells on two different substrates (one on GaAs (100) and another on a GaAs substrate misoriented by 4° in the (111) direction) resulted in samples of similar structure, but
Externí odkaz:
https://doaj.org/article/bfdef467e1f04364ad412a437f408adc
Autor:
Arvin I. Mabilangan, Niel Gabriel E. Saplagio, Eloise P. Anguluan, Neil Irvin F. Cabello, Rhona Olivia M. Gonzales, Armando S. Somintac, Arnel A. Salvador
Publikováno v:
Science Diliman, Vol 25, Iss 1, Pp 16-26 (2013)
Porous silicon (PSi) thin films from p-type silicon (100) substrates were fabricated using a simple table top electrochemical etching setup with a 1:1 HF:EtOh electrolyte solution. Porous silicon f ilms with different morphologies and optical propert
Externí odkaz:
https://doaj.org/article/4370a7012b114f619190176bf58d6424
Autor:
Ed Adrian Dilla, Renato Daclan, Michael J. Defensor, Celestino Andrew M. Borja, Arnel A. Salvador, Armando S. Somintac
Publikováno v:
Science Diliman, Vol 24, Iss 1, Pp 33-42 (2012)
In this work, titanium dioxide nanotubes were grown via anodization of sputtered titanium thin films using different anodization parameters in order to formulate a method of producing long anatase titanium dioxide nanotubes intended for solar cell ap
Externí odkaz:
https://doaj.org/article/0f319bb1f8424fbdb6944576fc9e9eaa
Autor:
Regine A. Loberternos, Oliver D. Semblante, Rogelio G. Dizon, Claude R. Ceniza, Jasher John A. Ibanes, Arnel A. Salvador, Armando S. Somintac
Publikováno v:
Science Diliman, Vol 22, Iss 1, Pp 19-25 (2010)
Anodic Aluminum oxide films were produced by anodization of sputtered Aluminum thin films on Silicon substrates. The effects of anodization voltage and aqueous oxalic acid solution on the pore diameter and interpore distance were studied. Parameters
Externí odkaz:
https://doaj.org/article/9f52c00cafd54b0ba20b163b8d486331
Autor:
Gerald Angelo R. Catindig, Hannah R. Bardolaza, John Daniel E. Vasquez, Rommel J. Jagus, Kerphy Liandro M. Patrocenio, Karl Cedric P. Gonzales, Elizabeth Ann P. Prieto, Armando S. Somintac, Elmer S. Estacio, Alexander E. De Los Reyes, Arnel A. Salvador
Publikováno v:
Optical Materials Express. 12:4702
We investigate strain effects on the ultrafast carrier dynamics and transport of gallium arsenide films on silicon (GaAs/Si) and magnesium oxide (GaAs/MgO) substrates using temperature-dependent photoluminescence (PL) and terahertz time-domain spectr
Autor:
Maria Herminia M. Balgos, Mary Clare S. Escaño, Rafael B. Jaculbia, Tien Quang Nguyen, Elizabeth Ann P. Prieto, Elmer S. Estacio, Arnel A. Salvador, Armando S. Somintac, Masahiko Tani, Norihiko Hayazawa, Yousoo Kim
Publikováno v:
physica status solidi (b). 259:2100652
Autor:
Rafael B. Jaculbia, Jefferson M. Abrenica, Elmer S. Estacio, Arnel A. Salvador, Armando S. Somintac
Publikováno v:
Applied Physics Express; Dec2015, Vol. 8 Issue 12, p1-1, 1p
Autor:
Cyril P. Sadia, Joselito Muldera, Elmer S. Estacio, Armando S. Somintac, Arnel A. Salvador, Christopher T. Que, Kohji Yamamoto, Masahiko Tani
Publikováno v:
Applied Physics Express; Mar2015, Vol. 8 Issue 3, p1-1, 1p