Zobrazeno 1 - 10
of 51
pro vyhledávání: '"Arkady V. Yakimov"'
Autor:
Arkady V. Yakimov, Dmitry O. Filatov, Oleg N. Gorshkov, Alexey V. Klyuev, Nikolay I. Shtraub, Viktor S. Kochergin, Bernardo Spagnolo
Publikováno v:
Chaos, Solitons & Fractals. 164:112652
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f2c3336d5d649aacb6b08746c1e91cab
https://doi.org/10.1016/j.chaos.2022.112652
https://doi.org/10.1016/j.chaos.2022.112652
Autor:
Viktor S. Kochergin, Arkady V. Yakimov, Alexey V. Klyuev, Dmitry O. Filatov, Oleg N. Gorshkov, Dmitry A. Antonov, Alexey N. Mikhaylov, Denis V. Sunyaikin, Nikolay I. Shtraub, Nikolaos Vasileiadis, Panagiotis Dimitrakis, Bernardo Spagnolo
Publikováno v:
Japanese Journal of Applied Physics. 61:SM1013
The results of the experimental investigation of the relationship between the low-frequency noise spectrum of the electric current through conducting filaments in Si3N4 films with a thickness of 6 nm on n ++-Si(001) conducting substrates and retentio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7bd22a54d4a2a7a075757edfa3c849fa
https://doi.org/10.35848/1347-4065/ac7bf6
https://doi.org/10.35848/1347-4065/ac7bf6
Autor:
O. N. Gorshkov, Arkady V. Yakimov, Alexey V. Klyuev, Viktor S. Kochergin, Nikolay I. Shtraub, Bernardo Spagnolo, Dmitry Filatov
Publikováno v:
Chaos, Solitons & Fractals. 148:111014
The structure of the electron current through an individual filament of a nanometer-sized virtual memristor consisting of a contact of a conductive atomic force microscope probe to an yttria stabilized zirconia (YSZ) thin film deposited on a conducti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1159b5333531bd2585424a5eb26fefe6
https://doi.org/10.1016/j.chaos.2021.111014
https://doi.org/10.1016/j.chaos.2021.111014
Autor:
Arkady V. Yakimov, Dmitry Filatov, Ivan Antonov, O. N. Gorshkov, Bernardo Spagnolo, D. A. Antonov, Alexey V. Klyuev, A. V. Belyakov, Dmitry A. Liskin, Angelo Carollo
The low-frequency noise in a nanometer-sized virtual memristor consisting of a contact of a conductive atomic force microscope (CAFM) probe to an yttria stabilized zirconia (YSZ) thin film deposited on a conductive substrate is investigated. YSZ is a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::97e972aedb57fdafef985ff8033eaf4f
http://hdl.handle.net/10447/368727
http://hdl.handle.net/10447/368727
Publikováno v:
Radiophysics and Quantum Electronics. 57:891-899
UDC 621.391.822 In this work, we study the spectrum SiD of natural (thermal and shot) current noise of the p-n junction and the Schottky barrier in the case where their current-voltage characteristic has a nonideality coefficient η exceeding unity.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::68c5b5a7102990ce5c757059350ff6e4
https://doi.org/10.1007/s11141-015-9573-6
https://doi.org/10.1007/s11141-015-9573-6
Publikováno v:
Journal of Statistical Mechanics: Theory and Experiment. 2019:094005
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0ca3fd1f6ae3e2762f1a0f2fd20f032e
https://doi.org/10.1088/1742-5468/ab3789
https://doi.org/10.1088/1742-5468/ab3789
Autor:
Arkady V. Yakimov, Alexey V. Klyuev
Publikováno v:
Fluctuation and Noise Letters. 17:1850022
Fluctuations in parameters of light-emitting diode (LED) electromechanical 3D–display are investigated. It is shown, that there are two types of fluctuations in the rotating 3D–display. The first one is caused by a small increment in the rotation
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e4969506b29d62310007015fe6d4a12e
https://doi.org/10.1142/s0219477518500220
https://doi.org/10.1142/s0219477518500220
Publikováno v:
Radiophysics and Quantum Electronics. 51:134-144
We present the results of studies of the 1/f noise spectrum in light-emitting diodes and lasers with nanoscale structures based on GaAs and its solid solutions. Leakage current was detected from an analysis of I–V characteristics and voltage noise
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9e2b7b011327516a4aaf4defb0f50288
https://doi.org/10.1007/s11141-008-9014-x
https://doi.org/10.1007/s11141-008-9014-x
Publikováno v:
Radiophysics and Quantum Electronics. 50:135-145
We study the current-voltage (I–V ) characteristics and 1/f (flicker) noise spectra of experimental samples (prototypes) of submicron GaAs field-effect transistors (FETs) with Schottky planar gate in the linear regime. The model of I–V characteri
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8e44a857ea3228f58657b4c3717810d7
https://doi.org/10.1007/s11141-007-0012-1
https://doi.org/10.1007/s11141-007-0012-1