Multi-Domain Modeling and Simulations of the Heterogeneous Systems

Autor: Tomasz Bieniek, Grzegorz Janczyk, Jerzy Szynka, Piotr Grabiec, Andrzej Kociubiński, Magdalena Ekwińska, Daniel Tomaszewski, Arkadiusz Malinowski

Publikováno v: Journal of Telecommunications and Information Technology, Iss 1 (2023)

This paper discusses the multi-domain modeling and simulation issues of the design and analysis of heterogeneous integrated systems. Modeling and simulation method- ology and tools are also discussed.

Externí odkaz: https://doaj.org/article/b9b59aa693e4405e951e68355af369dc

Middle of Line: Challenges and Their Resolution for FinFET Technology

Autor: Aditya Kumar, Wenhe Lin, Bangun Indajang, Dustin Slisher, Arkadiusz Malinowski, Erik Geiss, Gao Wen Zhi, Shiv Kumar Mishra

Publikováno v: 2020 31st Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC).

This paper discusses major challenges faced in middle of line (MOL) manufacturing for FinFET technology. This throws light on major yield detractors for inline wafer yield as well as challenges involved at wafer sort. Since contact resistance is one

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::998d4a423ff4b22ae94c14d6e72b4337
https://doi.org/10.1109/asmc49169.2020.9185205

A 7nm CMOS technology platform for mobile and high performance compute application

Autor: Dhruv Singh, A. Gassaria, V. Chauhan, A. da Silva, P. Lindo, Daniel J. Dechene, M. Gribelyuk, I. Ahsan, M. Hasan, Judson R. Holt, Rod Augur, Jaeger Daniel, G. Northrop, G. Gomba, Ghosh Somnath, H. Narisetty, Basanth Jagannathan, Ting-Hsiang Hung, P. Liu, Y. Zhong, T. Gordon, Y. Fan, C. Schiller, A. Blauberg, O. Patterson, B. Morganfeld, Andres Bryant, J. Choo, T. Nigam, B. Senapati, V. Sardesai, N. Baliga, C. An, I. Ramirez, Rishikesh Krishnan, Arkadiusz Malinowski, S. Lucarini, Z. Sun, Sadanand V. Deshpande, R. Bhelkar, Mahender Kumar, Kong Boon Yeap, D. Conklin, Q. Fang, R. Gauthier, Purushothaman Srinivasan, S. Crown, M. Ozbek, Linjun Cao, G. Han, Z. Song, L. Huang, C. Serrau, R. Sweeney, M. Tan, Keith Donegan, Souvick Mitra, A. Zainuddin, P. Agnello, Balasubramanian S. Haran, Haifeng Sheng, B. Greene, A. Hassan, Tabakman Keith, Xin Wang, Sanjay Parihar, L. Cheng, M. Lagus, Jessica Dechene, D. Xu, G. Gifford, M. Zhao, Jeyaraj Antony Johnson, Y. Yan, Rick Carter, Manoj Joshi, W. Kim, Gabriela Dilliway, Jack M. Higman, S. Kalaga, Kai Zhao, Jinping Liu, A. Ogino, M. Lipinski, Amanda L. Tessier, Garo Jacques Derderian, S. Madisetti, N. Shah, Christopher Ordonio, M. Aminpur, Rakesh Ranjan, S. Saudari, Christa Montgomery, Tony Tae-Hyoung Kim, Jeric Sarad, Jae Gon Lee, Bharat Krishnan, Joseph F. Shepard, L. Hu, J. Sporre, Akil K. Sutton, Eswar Ramanathan, Cathryn Christiansen, J.H. Han, J. Lemon, Patrick Justison, Natalia Borjemscaia, Scott C. Johnson, B. Cohen, Kan Zhang, Srikanth Samavedam, G. Xu, T. Xuan, Unoh Kwon, C. Meng, Katsunori Onishi, Y. Shi, C. Huang, R. Coleman, Manfred Eller, Shreesh Narasimha, B. Kannan, J. Yang, Vivek Joshi, W. Ma, Christopher D. Sheraw, A. K. M. Mahalingam, Craig Child, E. Woodard, Tao Chu, Y. Jin, D. K. Sohn, Hasan M. Nayfeh, Mary Claire Silvestre, M. Lingalugari, G. Biery, Tian Shen, Carl J. Radens, E. Kaste, C-H. Lin, K. Han, K. Anil, Ankur Arya, Mehta Jaladhi, Jia Zeng, S.L. Liew, Michael V. Aquilino, M. Yu, M. Chen, Rohit Pal, E. Maciejewski, Stephan Grunow, Robert Fox, Rinus T. P. Lee

Publikováno v: 2017 IEEE International Electron Devices Meeting (IEDM).

We present a fully integrated 7nm CMOS platform featuring a 3rd generation finFET architecture, SAQP for fin formation, and SADP for BEOL metallization. This technology reflects an improvement of 2.8X routed logic density and >40% performance over th

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::5545f519d7dcbb19a8a64d95e77053fd
https://doi.org/10.1109/iedm.2017.8268476

Sticking coefficient of hydrogen radicals on ArF photoresist estimated by parallel plate structure in conjunction with numerical analysis

Autor: Arkadiusz Malinowski, Kenji Ishikawa, Toshiya Suzuki, Andrzej Jakubowski, Masaru Hori, Hiroki Kondo, Lidia Lukasiak, Daniel Tomaszewski, Takuya Takeuchi, Hiroshi Yamamoto, Makoto Sekine

Publikováno v: 2011 International Conference on Simulation of Semiconductor Processes and Devices.

Investigation of radicals kinetic behavior and estimation of radical sticking coefficient become indispensable for establishing plasma processing control by its internal parameters. This approach is required for plasma processing of single-nanometer

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::2ed2b3b6c7e408823db27604a7259808
https://doi.org/10.1109/sispad.2011.6035090

A novel fast and flexible technique of radical kinetic behaviour investigation based on pallet for plasma evaluation structure and numerical analysis

Autor: Lidia Lukasiak, Masaru Hori, Andrzej Jakubowski, Takuya Takeuchi, Toshiya Suzuki, Arkadiusz Malinowski, Shang Chen, Kenji Ishikawa, Makoto Sekine

Publikováno v: Journal of Physics D: Applied Physics. 46:265201

This paper describes a new, fast, and case-independent technique for sticking coefficient (SC) estimation based on pallet for plasma evaluation (PAPE) structure and numerical analysis. Our approach does not require complicated structure, apparatus, o

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::a315459e24ad1b58d448a9e1f254c70f
https://doi.org/10.1088/0022-3727/46/26/265201