Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Arkadi Gavrilov"'
Autor:
Barbara Abendroth, Valentin Garbe, D. Cohen-Elias, Dirk C. Meyer, Shlomo Mehari, Hartmut Stöcker, Arkadi Gavrilov, Dan Ritter
Publikováno v:
Crystal Research and Technology. 50:425-431
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a72c2e511c459f2d7b1fe5018a34eff9
https://doi.org/10.1002/crat.201400468
https://doi.org/10.1002/crat.201400468
Tunneling Emitter Bipolar Transistor as a Characterization Tool for Dielectrics and their Interfaces
Autor:
D. Mistele, Vissarion Mikhelashvili, Arkadi Gavrilov, Shimon Cohen, Joseph Salzman, Eilam Yalon, Dan Ritter, Boris Meyler
Publikováno v:
ECS Transactions. 41:325-334
The metal insulator semiconductor and metal insulator metal structures are of interest for transistor technology and resistive switching based memory. We propose the tunneling emitter bipolar transistor as a complementary characterization tool of bot
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::345d83f0d6b59a6a8e9f0dcb46488b40
https://doi.org/10.1149/1.3633049
https://doi.org/10.1149/1.3633049
Autor:
D. Cohen-Elias, Barbara Abendroth, Hartmut Stöcker, Dan Ritter, Shlomo Mehari, Dirk C. Meyer, Arkadi Gavrilov, Valentin Garbe
Publikováno v:
Crystal Research and Technology. 50
Commercially available hydride vapor phase epitaxy gallium nitride (GaN) is characterized with the aim to correlate the oxygen and hydrogen secondary ion mass spectrometry profiles of a GaN wafer with the electrical properties of the sample. A GaN la
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a2006a6f5983754bfc18a71a2d47413f
https://doi.org/10.1002/crat.201570011
https://doi.org/10.1002/crat.201570011
Publikováno v:
Semiconductor Science and Technology. 26:105004
We present a study of nickel chromium (NiCr) thin film resistors deposited on InP substrate. In contrast to previously published work, the NiCr film resistance changes by a factor of 2.5 after temperature exposure to 250 °C in air. In order to expla
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0f1b62a01ef908e6cf525635d58557e3
https://doi.org/10.1088/0268-1242/26/10/105004
https://doi.org/10.1088/0268-1242/26/10/105004
Tunneling Emitter Bipolar Transistor as a Characterization Tool for Dielectrics and their Interfaces
Autor:
Eilam Yalon, Arkadi Gavrilov, Shimon Cohen, David Mistele, Boris Meyler, Joseph Salzman, Dan Ritter
Publikováno v:
ECS Meeting Abstracts. :1917-1917
not Available.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2594407705c66104194efb05cbb1cd1f
https://doi.org/10.1149/ma2011-02/27/1917
https://doi.org/10.1149/ma2011-02/27/1917
Publikováno v:
Semiconductor Science & Technology; Oct2011, Vol. 26 Issue 10, p105004-105004, 1p