Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Arkadeep Deb"'
Publikováno v:
Energies, Vol 16, Iss 11, p 4380 (2023)
This review explores the performance and reliability of power semiconductor devices required to enable the electrification of heavy goods vehicles (HGVs). HGV electrification can be implemented using (i) batteries charged with ultra-rapid DC charging
Externí odkaz:
https://doaj.org/article/9d157e60ff8e4d39a84c4b5e40b16438
Autor:
Mohammed Amer Karout, Mohamed Taha, Craig A. Fisher, Arkadeep Deb, Philip Mawby, Olayiwola Alatise
Publikováno v:
2023 IEEE Applied Power Electronics Conference and Exposition (APEC).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::67247dd11092896b353ca3136d57ac92
https://doi.org/10.1109/apec43580.2023.10131399
https://doi.org/10.1109/apec43580.2023.10131399
Autor:
Arkadeep Deb, Jose Ortiz Gonzalez, Erfan Bashar, Mohamed Taha, Mahdi Tousizadeh, Saeed Jahdi, Philip Mawby, Lionel Masson, Olayiwola Alatise
Publikováno v:
Deb, A, Gonzalez, J O, Bashar, E, Jahdi, S, Taha, M & Taodizadeh, M 2022, Unipolar and Bipolar Pulsed Gate Stresses and Threshold Voltage Shifts in GaN e-HEMTs . in 2022 IEEE Energy Conversion Congress and Exposition, ECCE 2022 . 2022 IEEE Energy Conversion Congress and Exposition, ECCE 2022, Institute of Electrical and Electronics Engineers (IEEE), Detroit, MI, USA, 2022 IEEE Energy Conversion Congress and Exposition (ECCE), 9/10/22 . https://doi.org/10.1109/ECCE50734.2022.9947415
In GaN e-HEMTs, Threshold Voltage (VTH) shift from gate voltage (VGS) stress depends on the VGs magnitude, stress time, recovery time (time between stress removal and VTH measurement), temperature and pulse polarity (0 to +VGS or −VGS to +VGS ). In
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::88905727116a9eaae7a09e6459d690eb
https://doi.org/10.1109/ecce50734.2022.9947415
https://doi.org/10.1109/ecce50734.2022.9947415
Autor:
Arkadeep Deb, Jose Ortiz Gonzalez, Erfan Bashar, Saeed Jahdi, Mohamed Taha, Philip Mawby, Olayiwola Alatise
Publikováno v:
Deb, A, Gonzalez, J O, Bashar, E, Jahdi, S, Taha, M, Mawby, P & Alatise, O 2022, On the Repeatability and Reliability of Threshold Voltage Measurements during Gate Bias Stresses in Wide Bandgap Power Devices . in 2022 IEEE Workshop on Wide Bandgap Power Devices and Applications in Europe (WiPDA Europe) . Institute of Electrical and Electronics Engineers (IEEE), Coventry, United Kingdom, 2022 IEEE Workshop on Wide Bandgap Power Devices and Applications in Europe (WiPDA Europe), 18/09/22 . https://doi.org/10.1109/WiPDAEurope55971.2022.9936437
This paper investigates the peculiarities and challenges of accurate threshold voltage ( VTH ) measurement after gate bias stress in SiC MOSFETs and GaN e-HEMTs. Traditional techniques historically used in silicon MOSFETs involve test sequences typic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4f5d18d0e86b7a9ea6fc5d3dc6dc276a
https://doi.org/10.1109/wipdaeurope55971.2022.9936437
https://doi.org/10.1109/wipdaeurope55971.2022.9936437
Publikováno v:
University of Bristol-PURE
Etoz, B, Ortiz-Gonzalez, J, Deb, A, Jahdi, S & Alatise, O 2022, Impact of threshold voltage shifting on junction temperature sensing in GaN HEMTs . in 24th European Conference on Power Electronics and Applications (EPE'22 ECCE Europe) . Institute of Electrical and Electronics Engineers (IEEE), Hanover, Germany, 24th European Conference on Power Electronics and Applications (EPE'22 ECCE Europe), Hanover, Germany, 5/09/22 . < https://ieeexplore.ieee.org/document/9907627 >
Etoz, B, Ortiz-Gonzalez, J, Deb, A, Jahdi, S & Alatise, O 2022, Impact of threshold voltage shifting on junction temperature sensing in GaN HEMTs . in 24th European Conference on Power Electronics and Applications (EPE'22 ECCE Europe) . Institute of Electrical and Electronics Engineers (IEEE), Hanover, Germany, 24th European Conference on Power Electronics and Applications (EPE'22 ECCE Europe), Hanover, Germany, 5/09/22 . < https://ieeexplore.ieee.org/document/9907627 >
Junction temperature sensing in GaN HEMTs has been identified as a critical challenge for condition monitoring especially under power cycling conditions. The use of temperature sensitive electrical parameters has been widely studied. In GaN devices,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::72aff43a74b5fd65cceef18e764cdd71
https://research-information.bris.ac.uk/en/publications/27417b5a-8e9a-4070-b01d-e4ccf145cf84
https://research-information.bris.ac.uk/en/publications/27417b5a-8e9a-4070-b01d-e4ccf145cf84
