Zobrazeno 1 - 10
of 133
pro vyhledávání: '"Arjan J. Houtepen"'
Autor:
Patrick J. Brosseau, Jaco J. Geuchies, Dipti Jasrasaria, Arjan J. Houtepen, Eran Rabani, Patanjali Kambhampati
Publikováno v:
Communications Physics, Vol 6, Iss 1, Pp 1-9 (2023)
For decades hole dynamics were thought to be invisible in the transient spectroscopy of quantum dots. Here, the authors use a combination of time and frequency resolution of 2D electronic spectroscopy to reveal previously unobserved hole dynamics and
Externí odkaz:
https://doaj.org/article/438a98934eb849c5893037c9397c78d5
Autor:
Pieter Geiregat, Carmelita Rodá, Ivo Tanghe, Shalini Singh, Alessio Di Giacomo, Delphine Lebrun, Gianluca Grimaldi, Jorick Maes, Dries Van Thourhout, Iwan Moreels, Arjan J. Houtepen, Zeger Hens
Publikováno v:
Light: Science & Applications, Vol 10, Iss 1, Pp 1-11 (2021)
Abstract 2D materials are considered for applications that require strong light-matter interaction because of the apparently giant oscillator strength of the exciton transitions in the absorbance spectrum. Nevertheless, the effective oscillator stren
Externí odkaz:
https://doaj.org/article/7521215a8c004f03822ca26d44e50a84
Publikováno v:
Advanced Photonics Research, Vol 2, Iss 8, Pp n/a-n/a (2021)
The luminescence efficiency of Ce3+ in garnet phosphors is among the most stable for luminescent materials. Still, it has been observed to be reduced at high incident blue flux (known as droop) due to nonlinear processes caused by the high lumen dens
Externí odkaz:
https://doaj.org/article/90ef14e3b023482380e25800058552e4
Autor:
Chris de Weerd, Leyre Gomez, Antonio Capretti, Delphine M. Lebrun, Eiichi Matsubara, Junhao Lin, Masaaki Ashida, Frank C. M. Spoor, Laurens D. A. Siebbeles, Arjan J. Houtepen, Kazutomo Suenaga, Yasufumi Fujiwara, Tom Gregorkiewicz
Publikováno v:
Nature Communications, Vol 9, Iss 1, Pp 1-9 (2018)
In semiconductor nanocrystals, efficient carrier multiplication counteracts hot carrier thermalization, increasing the overall carrier generation yield. Here, de Weerd et al. observe a quantum yield of up to 98% in CsPbI3 nanocrystals as a result of
Externí odkaz:
https://doaj.org/article/c2dc3b671567489483419517e01cd088
Autor:
Gianluca Grimaldi, Ryan W. Crisp, Stephanie ten Brinck, Felipe Zapata, Michiko van Ouwendorp, Nicolas Renaud, Nicholas Kirkwood, Wiel H. Evers, Sachin Kinge, Ivan Infante, Laurens D. A. Siebbeles, Arjan J. Houtepen
Publikováno v:
Nature Communications, Vol 9, Iss 1, Pp 1-10 (2018)
Efficient use of high-energy, or “hot”, carriers could increase the efficiency of solar cells, provided efficient extraction of electrons at a specific energy. Here, the authors show the presence of hot-electron transfer between two quantum dot s
Externí odkaz:
https://doaj.org/article/d16fba15403b415bb6c28b8e9f0227f6
Publikováno v:
Applied Sciences, Vol 8, Iss 10, p 1867 (2018)
From a niche field over 30 years ago, quantum dots (QDs) have developed into viable materials for many commercial optoelectronic devices. We discuss the advancements in Pb-based QD solar cells (QDSCs) from a viewpoint of the pathways an excited state
Externí odkaz:
https://doaj.org/article/8693192996d54fc6b9edd62ed37b7d67
Autor:
Hamit Eren, Roland Jan-Reiner Bednarz, Maryam Alimoradi Jazi, Laura Donk, Solrun Gudjonsdottir, Peggy Bohländer, Rienk Eelkema, Arjan J. Houtepen
Publikováno v:
Chemistry of Materials, 34
Quantum dots (QDs) are considered for devices like light-emitting diodes (LEDs) and photodetectors as a result of their tunable optoelectronic properties. To utilize the full potential of QDs for optoelectronic applications, control over the charge c
Autor:
Reinout F. Ubbink, Guilherme Almeida, Hodayfa Iziyi, Indy du Fossé, Ruud Verkleij, Swapna Ganapathy, Ernst R. H. van Eck, Arjan J. Houtepen
Publikováno v:
Chemistry of Materials, 34(22)
Chemistry of Materials, 34, 10093-10103
Chemistry of Materials, 34, 22, pp. 10093-10103
Chemistry of Materials, 34, 10093-10103
Chemistry of Materials, 34, 22, pp. 10093-10103
Indium phosphide quantum dots are the main alternative for toxic and restricted Cd-based quantum dots for lighting and display applications, but in the absence of protecting ZnSe and/or ZnS shells, InP quantum dots suffer from low photoluminescence q
Autor:
Jence T. Mulder, Michael S. Meijer, J. Jasper van Blaaderen, Indy du Fossé, Kellie Jenkinson, Sara Bals, Liberato Manna, Arjan J. Houtepen
Publikováno v:
ACS applied materials & interfaces, 15
ACS applied materials and interfaces
ACS applied materials and interfaces
Ytterbium-doped LiYF4 (Yb:YLF) is a commonly used material for laser applications, as a photon upconversion medium, and for optical refrigeration. As nanocrystals (NCs), the material is also of interest for biological and physical applications. Unfor
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::898faa2b2db523ccfd4e52658ccc7d26
http://resolver.tudelft.nl/uuid:9d0dac8c-61df-4d89-8d59-f94664b9e2ff
http://resolver.tudelft.nl/uuid:9d0dac8c-61df-4d89-8d59-f94664b9e2ff
Autor:
Heng Zhang, Elke Debroye, Shuai Fu, Miriam C. Rodriguez González, Indy du Fossé, Jaco J Geuchies, Lei Gao, Xiaoqing Yu, Arjan J. Houtepen, Steven De Feyter, Johan Hofkens, Mischa Bonn, Hai I. Wang
Publikováno v:
Advanced Materials
Synergically combining their respective ultrahigh charge mobility and strong light absorption, graphene (Gr)/semiconductor heterostructures are promising building blocks for efficient optoelectronics, particularly photodetectors. Charge transfer (CT)