Zobrazeno 1 - 10
of 149
pro vyhledávání: '"Arivazhagan, L."'
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 10, Pp 696-705 (2022)
In this paper, the impact of AlGaN barrier thickness ( $\text{t}_{\mathrm{ AlGaN}}$ ) and substrate leakage on the noise conductance and noise figure in GaN High Electron Mobility Transistor (HEMT) is investigated. The investigation and analysis in t
Externí odkaz:
https://doaj.org/article/6496aa6416074e868bf1fe4794700459
Autor:
Godfrey, D., Nirmal, D., Arivazhagan, L., Godwinraj, D., Mohan Kumar, N., Chen, Yulin, Yeh, Wenkuan
Publikováno v:
In Microelectronics Journal December 2021 118
Autor:
Arivazhagan, L., Nirmal, D., Jarndal, Anwar, Huq, Hasina F., Chander, Subhash, Bhagyalakshmi, S., Reddy, Pavan Kumar, Ajayan, J., Varghese, Arathy
Publikováno v:
In Superlattices and Microstructures December 2021 160
Autor:
Ajayan, J., Nirmal, D., Tayal, Shubham, Bhattacharya, Sandip, Arivazhagan, L., Fletcher, A.S. Augustine, Murugapandiyan, P., Ajitha, D.
Publikováno v:
In Microelectronics Journal August 2021 114
Autor:
Husna Hamza, K., Nirmal, D., Augustine Fletcher, A.S., Arivazhagan, L., Ajayan, J., Natarajan, Ramkumar
Publikováno v:
In AEUE - International Journal of Electronics and Communications July 2021 136
Autor:
Ajayan, J., Nirmal, D., Mathew, Ribu, Kurian, Dheena, Mohankumar, P., Arivazhagan, L., Ajitha, D.
Publikováno v:
In Materials Science in Semiconductor Processing 15 June 2021 128
Publikováno v:
In Superlattices and Microstructures July 2020 143
Autor:
Godfrey, D., Nirmal, D., Arivazhagan, L., Rathes Kannan, R., Issac Nelson, P., Rajesh, S., Vidhya, B., Mohankumar, N.
Publikováno v:
In Physica E: Low-dimensional Systems and Nanostructures April 2020 118
Autor:
Ajayan, J., Nirmal, D., Mohankumar, P., Kuriyan, Dheena, Fletcher, A.S. Augustine, Arivazhagan, L., Kumar, B. Santhosh
Publikováno v:
In Microelectronics Journal October 2019 92
Autor:
Arivazhagan, L., Nirmal, D., Godfrey, D., Ajayan, J., Prajoon, P., Augustine Fletcher, A.S., Amir Anton Jone, A., Raj Kumar, J.S.
Publikováno v:
In AEUE - International Journal of Electronics and Communications August 2019 108:189-194