Zobrazeno 1 - 10
of 23
pro vyhledávání: '"Aritra Dey"'
Autor:
Sidhartha Tavri, Fabian Rengier, Sasan Partovi, Victor Kondray, Samuel Azeze, Aritra Dey, Arjang Ruhparwar, Xin Li
Publikováno v:
The International Journal of Cardiovascular Imaging. 35:1365-1377
Heart failure is a clinical condition that is associated with significant morbidity and mortality. With the advent of left ventricular assist device (LVAD), an increasing number of patients have received an artificial heart both as a bridge-to-therap
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2707b2cc393f22f5ef35f7816285412e
https://doi.org/10.1007/s10554-019-01562-4
https://doi.org/10.1007/s10554-019-01562-4
Publikováno v:
2020 IEEE Calcutta Conference (CALCON).
Among the recent variants of neural networks, Extreme learning machine (ELM) is widely popular in the domain of computer vision due to having short training time. Handwritten character recognition is one of the typical problem which has shown promisi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d775db4ab13a893bac022aaf2eeced74
https://doi.org/10.1109/calcon49167.2020.9106541
https://doi.org/10.1109/calcon49167.2020.9106541
Publikováno v:
Materials Today: Proceedings. 5:12330-12338
Experimental investigations were conducted on cutting of aluminium based composite material using Wire Electro Discharge Machining (WEDM). Objective was to optimize machining parameters of WEDM for high Material Removal Rate (MRR) and low surface rou
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4d7d733fb6173619aec48609d3b4aad5
https://doi.org/10.1016/j.matpr.2018.02.211
https://doi.org/10.1016/j.matpr.2018.02.211
Autor:
Kaushik Sett, Pritam Das, Prosun Ghosh, Surya Kanta Ghosh, Aritra Dey, Neelanjan Saha, Suparna Biswas
Publikováno v:
2018 Emerging Trends in Electronic Devices and Computational Techniques (EDCT).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e8a830a1c3c58052bf1b5e81b8962961
https://doi.org/10.1109/edct.2018.8405063
https://doi.org/10.1109/edct.2018.8405063
Publikováno v:
International Journal of Computer Applications. 115:31-41
Machine learning is one of the most exciting recent technologies in Artificial Intelligence. Learning algorithms in many applications that’s we make use of daily. Every time a web search engine like Google or Bing is used to search the internet, on
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b67d33a89ed16d69fb934363dcef4228
https://doi.org/10.5120/20182-2402
https://doi.org/10.5120/20182-2402
Publikováno v:
Lecture Notes in Networks and Systems ISBN: 9789811039522
In recent decades, artificial intelligence (AI) has found numerous applications in the field of medicine. In this paper, the key idea is that doctors are not available at emergency or doctors may do some mistakes by coincidence. To overcome or elimin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c012a087a6c70bb42eac06a6a3633b1f
https://doi.org/10.1007/978-981-10-3953-9_17
https://doi.org/10.1007/978-981-10-3953-9_17
Publikováno v:
Solid-State Electronics. 62:19-24
Drain bias stress effects on amorphous Zinc Indium Oxide (a-ZIO) Thin Film Transistors (TFTs) are important in flexible electronic systems. The drain bias impacts the overall threshold voltage ( V th ) shift more so in the saturation stress mode than
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ba861aef27dc78b8fafbfb0d597ec180
https://doi.org/10.1016/j.sse.2011.04.011
https://doi.org/10.1016/j.sse.2011.04.011
Autor:
E. J. Bawolek, Korhan Kaftanoglu, Sameer M. Venugopal, Michael Marrs, David R. Allee, Doug Loy, Aritra Dey
Publikováno v:
Journal of Display Technology. 7:339-343
Mixed-oxide thin-film transistors (TFTs) have been extensively researched due to their improved stability under electrical bias stress compared to amorphous-silicon TFTs. However, there are many challenges before they can reach the manufacturing stag
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::042a485b703c3f4d7396d8a32f4eff95
https://doi.org/10.1109/jdt.2011.2107879
https://doi.org/10.1109/jdt.2011.2107879
Publikováno v:
Solid-State Electronics. 53:548-556
Symmetric linearization method is developed in a form free of the charge-sheet approximation present in its original formulation for bulk MOSFET. This leads to a core compact model of certain multiple-gate transistors that has the form almost identic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a1eb4a049b6b56d266e17e23d894af21
https://doi.org/10.1016/j.sse.2009.01.020
https://doi.org/10.1016/j.sse.2009.01.020
Publikováno v:
IEEE Transactions on Electron Devices. 55:3442-3449
In this paper, analytical models of subthreshold current and slope for asymmetric four-terminal double-gate (DG) MOSFETs are presented. The models are used to study the subthreshold characteristics with asymmetry in gate oxide thickness, gate materia
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::60be56f69388ae61ad56333d652ef521
https://doi.org/10.1109/ted.2008.2006109
https://doi.org/10.1109/ted.2008.2006109