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pro vyhledávání: '"Aristégui, Rémi"'
Autor:
Damilano, Benjamin, Aristégui, Rémi, Teisseyre, Henryk, Vézian, Stéphane, Guigoz, Vincent, Courville, Aimeric, Florea, Ileana, Vennéguès, Philippe, Bockowski, Michal, Guillet, Thierry, Vladimirova, Maria
GaN/AlxGa1-xN quantum wells were grown by molecular beam epitaxy on high quality bulk (0001) GaN substrates. The quantum well thickness was set in the 6-8 nm range to favor the photoluminescence emission of indirect excitons. Indeed, such excitons ar
Externí odkaz:
http://arxiv.org/abs/2310.13323
