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pro vyhledávání: '"Arik Jung A. G. Taboada W. Stumpf T. Kreiliger F. Isa G. Isella E. Barthazy Meier and H. von"'
Publikováno v:
JOURNAL OF APPLIED PHYSICS
InGaAs/GaAs quantum wells (QWs) grown on micro-patterned Ge/Si substrates by metal organic vapor phase epitaxy are investigated by electron microscopy and spatially resolved photoluminescence (PL) spectroscopy. The lattice parameter mismatch of GaAs
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=snsf_p3_pubs::ab4808d2684b3bd8c0aa37f4efab97dc
